MOSFET IC SMD Type P-Channel MOSFET AO3419-HF (KO3419-HF) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ID = -3.5 A RDS(ON) 75m (VGS = -10V) RDS(ON) 95m (VGS = -4.5V) RDS(ON) 145m 1 0.55 VDS (V) = -20V +0.2 1.6 -0.1 +0.2 2.8 -0.1 Features 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1.1 +0.2 -0.1 (VGS = -2.5V) 0-0.1 Pb−Free Lead Finish +0.1 0.68 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS Continuous Drain Current *1 TA=25 P u l s e d D r a i n Cu r r e n t * 2 Power Dissipation *1 TA=25 TA=70 Thermal Resistance.Junction-to-Ambient Thermal Resistance.Junction-to-Case Junction and Storage Temperature Range *1The value of R ID TA=70 JA IDM PD R JA R JC TJ, TSTG 12 V -3.5 -2.8 A -15 1.4 0.9 W 125 /W 60 /W -55 to 150 is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. www.kexin.com.cn 1 IC MOSFET SMD Type P-Channel MOSFET AO3419-HF (KO3419-HF) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Testconditions ID=250 Min Typ -20 A, VGS=0V -0.5 VDS=-16V, VGS=0V ,TJ=55 -2.5 VDS=0V, VGS= 10V VDS=VGS ID=-250 RDS(ON) -0.7 -1.4 ID(ON) Forward Transconductance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs V VGS=-4.5V, ID=-3A 95 m 145 VGS=-4.5V, VDS=-5V -15 VDS=-5V, ID=-3.5A A 6.8 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=- =-10V, ID=-3.5A S 620 pF 77 pF 62 pF 9.2 13 5.5 6.6 nC 0.8 nC Gate Drain Charge Qgd 1.9 nC Turn-On DelayTime tD(on) 5 ns Turn-On Rise Time tr 6.7 ns Turn-0ff DelayTime tD(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IF=-3.5A, dI/dt=100A/µs 9. 8 Body Diode Reverse Recovery Charge Qrr IF=-3.5A, dI/dt=100A/µs 2.7 Maximum Body-Diode Continuous Current IS Diode Forward Voltage ■ Marking Marking 2 gFS A 75 105 TJ=125 VGS=-2.5V, ID=-1A On state drain current A 1 A VGS=-10V, ID=-3.5A Unit V VDS=-16V, VGS=0V VGS=-10V, ID=-3.5A Static Drain-Source On-Resistance Max AL* F www.kexin.com.cn VSD VGS=-10V, VDS=-10V, RL=2.8 IS=-1A,VGS=0V ,RGEN=3 -0.65 28 ns 13.5 ns -0.81 12 ns nC -2 A -0.95 V MOSFET SMD Type ■ Typical Characterisitics P-Channel MOSFET AO3419-HF (KO3419-HF) 30 12 -10V 25 9 -ID(A) -3.5V 20 -ID (A) VDS=-5V -4.5V 15 -2.5V 10 3 VGS=-2.0V 5 6 0 25°C 0 0 1 2 3 4 5 0 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 170 1 2 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 4 Normalized On-Resistance 1.60 140 RDS(ON) (mΩ Ω) 125°C VGS=-2.5V 110 VGS=-4.5V 80 VGS=-10V 50 ID=-3.5A, VGS=-10V 1.40 ID=-3A, VGS=-4.5V 1.20 ID=-1A, VGS=-2.5V 1.00 0.80 20 0 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 180 1.0E+01 ID=-3.5A 1.0E+00 1.0E-01 120 125°C 90 -IS (A) RDS(ON) (mΩ Ω) 150 125°C 25°C 1.0E-02 1.0E-03 60 25°C 30 1.0E-04 1.0E-05 0.0 2.0 4.0 6.0 8.0 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type ■ Typical Characterisitics P-Channel MOSFET AO3419-HF (KO3419-HF) 600 5 VDS=-10V ID=-3.5A 450 Capacitance (pF) -VGS (Volts) 4 3 2 Ciss 300 150 1 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 100.0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited Power (W) 100µs 1ms 1.0 10ms 100ms 10s DC 0.1 TJ(Max)=150°C TA=25°C 0.0 0.01 10 100 10 1 0.1 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 100 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse . RθJA=125°C/W 1 0.1 PD Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 20 1000 10.0 -ID (Amps) Crss 0 0 Zθ JA Normalized Transient Thermal Resistance Coss www.kexin.com.cn T 100 1000