ZP CJQ4435 Plastic-encapsulate mosfet Datasheet

CJQ4435
SOP8 Plastic-Encapsulate MOSFETS
CJQ4435 P-Channel MOSFET
SOP8
APPLICATIONS
 Load Switches
 Battery Switch
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±20
Continuous Drain Current (t =10s) (note 1)
ID
-9.1
Pulsed Drain Current
IDM
-50
Drain-Source Diode Forward Current (t =10s) (note 1)
IS
-2
Power Dissipation (t =10s)
PD
1.4
W
RθJA
89
℃/W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 ~+150
Thermal Resistance from Junction to Ambient (t ≤10s) (note 1)
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Units
V
A
℃
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CJQ4435
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain Source Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250µA
Zero Gate Voltage Drain Current
IDSS
VDS=-30V, VGS=0V
-1
µA
Gate body Leakage
lGSS
VDS=0V, VGS=±20V
±100
nA
-3
V
Gate Threshold Voltage
Drain-Source on-state Resistance
(note 2)
VGS(th)
RDS(on)
Forward Transconductance (note 2)
gFs
VDS =VGS, ID =-250µA
-30
V
-1
VGS =-10V, ID =-9.1A
24
VGS =-4.5V, ID =-6.9A
35
VDS =-10V, ID =-9.1A
20
mΩ
S
Dynamic Characteristics (note 3)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
1350
VDS =-15V,VGS =0V,f =1MHz
pF
215
185
VDS =-15V,VGS =-10V,ID =-9.1A
50
25
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
tr
td(off)
Fall Time
nC
4
7.5
f =1MHz
td(on)
Rise Time
Turn-Off Delay Time
VDS =-15V,VGS =-4.5V,ID =-9.1A
5.8
Ω
15
VDD=-15V,RL=15Ω
15
ID =-1A,VGEN=-10V,RG=1Ω
70
tf
ns
25
Drain-Source Body Diode Characteristics
Diode Forward Voltage
VSD
IS=-2A,VGS=0V
-1.2
V
Notes:
1. Surface mounted on 1”×1” FR4 board.
2. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%.
3. Guaranteed by design, not subject to production testing.
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CJQ4435
Transfer Characteristics
Output Characteristics
-24
Ta=25℃
Pulsed
-24
VGS=-3V,-3.5V,-4V,-4.5V
VDS=-10V
Ta=25℃
Pulsed
ID
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
-18
(A)
-18
-12
VGS=-2.5V
-6
-12
-6
VGS=-2V
-0
-0
-2
-4
-6
DRAIN TO SOURCE VOLTAGE
-8
VDS
-0
-10
-0
-1
(V)
-2
-3
GATE TO SOURCE VOLTAGE
RDS(ON) —— ID
VGS
-4
(V)
RDS(ON) —— VGS
80
80
Ta=25℃
Pulsed
Ta=25℃
Pulsed
(mΩ)
60
RDS(ON)
40
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(mΩ)
60
VGS=-4.5V
20
40
ID=-9.1A
20
VGS=-10V
0
-0
-2
-4
-6
DRAIN CURRENT
ID
-8
0
-10
-0
-2
(A)
-4
-10
(V)
-2
-1
Ta=25℃
Pulsed
IS (A)
-1.5
SOURCE CURRENT
VTH
(V)
-8
VGS
IS —— VSD
Threshold Voltage
-1.6
THRESHOLD VOLTAGE
-6
GATE TO SOURCE VOLTAGE
-1.4
ID=-250uA
-1.3
-1.2
25
50
75
JUNCTION TEMPERATURE
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100
TJ
125
-0.1
-0.01
-1E-3
-0.2
(℃ )
-0.4
-0.6
SOURCE TO DRAIN VOLTAGE
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-0.8
-1.0
VSD (V)
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