UTC MJE2955TG-TA3-T High voltage transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJE2955T
PNP SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
„
DESCRIPTION
1
TO-220
The UTC MJE2955T is designed for general purpose of amplifier
and switching applications.
1
TO-252
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE2955TL-TA3-T
MJE2955TG-TA3-T
MJE2955TL-TN3-R
MJE2955TG-TN3-R
Note: B:BASE C: COLLECTOR E: EMITTER
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., LTD
Package
TO-220
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tape Reel
1
QW-R203-012,C
MJE2955T
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Base Current
Total Power Dissipation (Ta=25°C)
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
RATINGS
70
60
5
10
6
75
UNIT
V
V
V
A
A
W
Junction Temperature
TJ
125
°C
Operating Temperature
TOPR
-20 ~ +85
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Baser-Emitter on Voltage
DC Current Gain
Current Gain Bandwidth Product
SYMBOL
BVCEO
VBCBO
BVEBO
ICBO
ICEO
ICEX
IEBO
VCE(SAT)1
VCE(SAT)2
VBE(ON)
hFE1
hFE2
fT
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
IC=200mA
IC=10mA
IE=10mA
VCB=70V
VCE=30V
VCE=70V, VEB(OFF)=1.5V
VEB=5V
IC=4A, IB=0.4A
IC=10A, IB=3.3A
VCE=4V, IC=4A
IC=4A, VCE=4V
IC=10A, VCE=4V
VCE=10V, IC=0.5A, f=1MHz
MIN
60
70
5
20
5
2
TYP MAX UNIT
V
V
V
1
mA
700 μA
1
mA
5
mA
1.1
V
8.0
1.8
V
100
MHZ
2
QW-R203-012,C
MJE2955T
Collector current, IC (A)
µs
100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power dissipatioan, PC (W)
Saturation voltage, VBE(SAT), VCE(sat) (V)
TYPICAL CHARACTERISTICS
DC current gain, hFE
„
PNP SILICON TRANSISTOR
3
QW-R203-012,C
MJE2955T
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R203-012,C
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