Renesas NHD020C Intelligent power device Datasheet

Datasheet
μPD166038T1J
INTELLIGENT POWER DEVICE
R07DS1115EJ0201
Rev.2.01
Jul 02, 2015
1. Overview
1.1 Description
Family:
μPD166038T1J is a part of 2nd Generation Intelligent Power Devices (IPD). This is N-channel high-side switch with
charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded
protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number
combination.
Scalability:
Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design
depending on target load.
Robustness:
Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against
long term and repetitive short circuit condition.
1.2 Features
- Built-in charge pump
- 3.3V compatible logic interface
- Low standby current
- Short circuit protection
- Shutdown by over current detection
- Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control)
- Absolute Tch over temperature protection
- Built-in diagnostic function
- Proportional load current sensing
- Defined fault signal in case of abnormal load condition
- Loss of ground protection
- Under voltage lock out
- Active clamp operation at inductive load switch off
- Cross current protection in case of H-bridge high side usage
- AEC Qualified
- RoHS compliant
1.3 Application
- Light bulb switching from 35W to 60W, Flasher driver
- Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor
- Power supply switch, fail-safe switch of 14V DC grounded system
Note: The information contained in this document is the one that was obtained when the document was issued,
and may be subject to change.
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 1 of 39
μPD166038T1J Datasheet
2. Ordering Information
2. Ordering Information
Part No.
Nick name
UPD166038T1J-E1-AY
UPD166038T1J-E2-AY
NHD020B
NHD020B
Lead plating
Packing
Package
Pure Matte Sn
Pure Matte Sn
Tape 1500 p/reel
Tape 1500 p/reel
12-pin Power HSSOP
12-pin Power HSSOP
Note: MSL: 1, profile acc. J-STD-20C
2.1 Nick name
N H D 020 B
On-state resistance
S: Single channel
D: Dual channel
Q: Quad channel
A: TO252-7
B: 12-pin Power HSSOP
C: 24-pin Power HSSOP
Nch High-side
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 2 of 39
µPD166038T1J Datasheet
3. Specification
3. Specification
3.1 Block Diagram
3.1.1 Nch High-side Single Device
Voltage and Current Definition
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 3 of 39
μPD166038T1J Datasheet
3. Specification
3.2 Pin Configuration
3.2.1 12-pin Power HSSOP Pin Configuration
Pin No.
Terminal Name
1
GND
2
IN1
3
IS1
4
IS2
5
IN2
6
VCC
7
SEN
8
OUT2
9
OUT2
10
OUT1
11
OUT1
12
VCC
Tab
VCC
12 11 10 9 8 7
Tab
Tab
1
2
3
4 5 6
Pin function
Terminal Name
GND
Pin function
Ground connection
INn
Input signal for channel n (n=1 to 2)
ISn
Current sense and Diagnosis output signal
channel n (n=1 to 2)
Sense enable input
SEN
OUTn
VCC
N.C.
Protected high-side power output channel n (n=1
to 2)
Positive power supply for logic supply as well as
output power supply
Non connection
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Recommended connection
Connected to GND through a 100 Ohm resistor
or a diode for reverse current protection
Refer chapter 6.
Connected to MCU port through 2k-50K serial
resistor
Connected to GND through a 0.67K-5K resistor
Connected to MCU port through 2k-50K serial
resistor
Connected to load with small 50-100nf capacitor
in parallel
Connected to battery voltage with small 100nf
capacitor in parallel
Left open
Page 4 of 39
μPD166038T1J Datasheet
3. Specification
3.3 Absolute Maximum Ratings
Ta=25degreeC, unless other specified
Parameter
Vcc Voltage
Symbol
VCC
Rating
28
Unit
V
Vcc Voltage at reverse
battery condition
-VCC
-16
V
GND Reverse current at
reverse battery condition
Vcc voltage under Load
Dump condition
Load Current
IGND(Rev)
200
mA
Vload dump
42
V
IL
Self limited
A
Total power dissipation
for whole device (DC)
PD
1.85
W
Voltage at IN pin
VIN
-2 ~ 16
V
-16
IN pin current
IIN
10
mA
Voltage at IS pin
VIS
VCC
V
-16
V
-30
mA
-2 ~ 16
V
IS Reverse current at
reverse battery condition
Voltage at SEN pin
IIS(Rev)
VSEN
-16
SEN pin current
ISEN
10
mA
Channel Temperature
Storage Temperature
ESD susceptibility
Tch
Tstg
VESD
-40 to +150
-55 to +150
2000
degreeC
degreeC
V
4000
200
Inductive load switch-off
EAS
70
energy dissipation single
pulse
Inductive load switch-off
EAR
35
energy dissipation
repetitive pulse
Remark) All voltages refer to ground pin of the device
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Test Condition
RL=3.4ohm, t<2min,
RIN=2kohm, RSEN=2kohm, RIS=1kohm,
RGND=100ohm
RL=3.4ohm, t<2min
RI=1ohm, RL=3.4ohm, RIS=1kohm, RIN=2kohm,
RSEN=2kohm , RGND=100ohm, td=400ms,
Ta=85degreeC,
Device on 50mmx50mmx1.5mm epoxy PCB FR4
with 6 cm2 of 70 um copper area
DC
RIN=2kohm
At reverse battery condition, t<2min,
RIN=2kohm, RSEN=2kohm
DC
DC
RIS=1kohm
At reverse battery condition, t<2min,
RL=3.4ohm, RIS=1kohm
At reverse battery condition, t<2min,
RL=3.4ohm
DC
RSEN=2kohm
At reverse battery condition, t<2min
RIN=2kohm, RSEN=2kohm
DC
HBM
AEC-Q100-002 std.
R=1.5kohm, C=100pF
All pin
mJ
IEC61000-4-2 std.
VCC, OUT
R=330ohm, C=150pF,
100nF at VCC and OUT
MM
AEC-Q100-003 std.
R=0ohm, C=200pF
VCC=13.5V, Tch,start<150degreeC, RL=3.4ohm
mJ
VCC=13.5V, Tch,start=85degreeC, RL=3.4ohm
V
Page 5 of 39
μPD166038T1J Datasheet
3. Specification
3.4 Thermal Characteristics
Parameter
Thermal characteristics
Symbol
Rth(ch-a)
Rth(ch-c)
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Min
Typ
35
1.1
Max
Unit
Test Condition
degree
C/W
According to JEDEC JESD51-2, -5, -7 on
FR4 2s2p board
degree
C/W
All channel
Page 6 of 39
μPD166038T1J Datasheet
3. Specification
3.5 Electrical Characteristics
Operation function
Tch=-40 to 150degreeC, Vcc=7 to 18V, unless otherwise specified
Parameter
Operating Voltage
Symbol
VCC
Operating current per
channel
IGND
Output Leakage current
per channel
IL(off)
Min
4.5
Typ
Max
28
Unit
V
2.2
4
mA
Test Condition
VIN=4.5V
RL=3.4ohm
VIN=4.5V
0.5
µA
Tch=25°C
3
Standby current
ICC(off)
0.5
µA
2
On-state resistance per
channel
Ron
Low level IN pin voltage
High level IN pin voltage
Low level IN pin current
High level IN pin current
Clamping IN pin voltage 1)
Low level SEN pin voltage
High level SEN pin voltage
Low level SEN pin current
High level SEN pin current
Clamping SEN pin voltage1)
Under voltage shutdown
Under voltage restart
Turn on time
Turn on delay time
Turn off time
Turn off delay time
Slew rate on
Slew rate off
Switching drift1)
VIL
VIH
IIL
IIH
VZIN
VSENL
VSENH
ISENL
ISENH
VZSEN
VCC(Uv)
VCC(Cpr)
ton
td(on)
toff
td(off)
dV/dton
-dV/dtoff
ton-toff
Turn on energy loss 1)
Turn off energy loss 1)
Driving capability 1)
Eon
Eoff
Dr(capa)
mohm
20
48
0.8
2.5
2
2
5
25
25
6
0.8
2.5
2
2
5
25
25
6
4.5
5.0
200
100
200
150
1.5
1.5
+50
-50
0.5
0.5
180
210
1.0
1.0
V
V
µA
µA
V
V
V
µA
µA
V
V
V
µs
µs
µs
µs
V/µs
V/µs
µs
mJ
mJ
mohm
VCC=13.5V,
VIN=0V,
VSEN=0V,
VIS=0V,
Tch=-40~125°C
VOUT=0V,
VGND=0V
Tch=25°C
VCC=13.5V,
VIN=0V,
VSEN=0V,
VIS=0V,
Tch=-40~85°C
VOUT=0V,
VGND=0V
Tch=25°C, IL=4.0A
Tch=150°C, IL=4.0A
VIN=0.8V
VIN=2.5V
VSEN=0.8V
VSEN=2.5V
VCC=13.5V, RL=3.4ohm
Vcc = 9 to 18V drift from Vcc=13.5V,
Tch=-40 to 150degreeC drift from
Tch=25degreeC
ton; Vout=Vcc-1.5V after input signal active
VCC=13.5V,Tch=25°C, RL=3.4ohm
Tch=25°C, VCC=8~16V
Tch=105°C, VCC=8~16V
Remark) All voltages refer to ground pin of the device
1) not subjected production test, guaranteed by design
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 7 of 39
μPD166038T1J Datasheet
3. Specification
Protection function
Tch=-40 to 150degreeC, Vcc=7 to 18V, unless otherwise specified
Parameter
Over current detection
current
Current limitation under
power limitation toggling
Current limitation under
absolute thermal toggling
Current limitation trigger
threshold during turn-on
Current limitation trigger
threshold during on-state
Absolute thermal
shutdown temperature
Thermal hysteresis for
absolute thermal toggling
Power limitation thermal
shutdown temperature
Power limitation restart
temperature
Output clamp at inductive
load switch off
Output current while GND
disconnection
Output voltage drop at
reverse battery condition
Symbol
IL(SC)
Min
47
Typ
75
Max
Unit
A
Test Condition
VCC=13.5V, Von=5V, Tch=25°C
IL(CL)
33
A
VCC=13.5V
IL(TT)
25
A
VCC=13.5V
Von(CL1)
2.0
V
VCC=13.5V
Von(CL2)
0.8
V
VCC=13.5V
aTth
150
°C
aTth,hys
10
°C
dTth
60
°C
dTth,rest
art
Von,clam
p
IL(GND)
30
°C
30
Vds(rev)
40
V
1
mA
0.9
V
0.7
VCC=13.5V, IL=40mA, Tch=25°C
IIN=0A, ISEN=0A, IGND=0A, IIS=0A
Tch=25°C
Tch=150°C
VCC=-13.5V,
RL=3.4ohm
Remark) All voltages refer to ground pin of the device
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 8 of 39
μPD166038T1J Datasheet
3. Specification
Diagnosis function
Tch=-40 to 150degreeC, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Parameter
Current sense ratio
Symbol
KILIS
dKILIS,cal
Current sense drift depend
on temperature for single
point calibration
Min
2720
2380
-11.4
Typ
3400
3400
-8.2
-6.5
-4.8
-5.5
Sense current offset
current
Sense current leakage
current
Max
4080
5400
13.1
Unit
%
7.9
6.0
6.6
7.5
Test Condition
IL=4.8A
IL=0.9A
IL=1.5A
Calibration point:
IL=2.4A, VCC=13.5V,
IL=2.0A
Tch=25°C
IL=2.4A
IL=3A
IL=4A
Iis,offset
50
µA
IL=0A, Tch=25degreeC
Iis,dis
1
µA
VIN=0V, VSEN=0V
VCC=13.5V, RIS=0.67kohm
VCC=13.5V, RIS=1kohm
VCC=13.5V, RIS=2kohm
Iis,fault
3
3.5
3.5
9.5
9
5.5
mA
Open load detection
threshold at off-state
VOUT(OL)
2.0
5.0
V
VIN=0V, Tch=-40~105°C
OUT terminal current at
Open load condition
IOUT(OL)
-1.0
µA
VIN =0V
µs
VIN=4.5V to 0V, VOUT>VOUT(OL)
Sense current under fault
condition
Open load detection delay
after input negative slope
tdop
300
Remark) All voltages refer to ground pin of the device
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 9 of 39
μPD166038T1J Datasheet
3. Specification
Diagnosis function
Tch=-40 to 150degreeC, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Parameter
Sense current settling time
after input signal positive
slope
Symbol
tsis(on)
Min
Typ
Max
250
Unit
µs
Test Condition
VCC=13.5V, VIN=0V to 4.5V,
IL/IIS=KILIS, RL=3.4ohm
Sense current settling time
after input signal negative
slope
tsis(off)
10
µs
VIN=4.5V to 0V
Sense current settling time
after sense enable during
on-state 1)
tssen(on)
20
µs
VSEN=0V to 4.5V, RL=3.4ohm
Sense current settling time
after sense disable during
on-state 1)
tssen(off)
20
µs
VSEN=4.5V to 0V, RL=3.4ohm
Sense current settling time
during on-state 1)
tsis(LC)
20
µs
RL=3.4ohm to 1.7ohm
Fault signal delay after
over current detection 1)
tdsc(fault)
10
µs
VIN=0V to 4.5V, IL=IL(SC)
Fault signal delay after
power limitation valid 1)
tdpl(fault)
10
µs
Von>Von(CL1)
tdpl(off)
30
µs
Von<Von(CL1)
tdot(fault)
10
µs
IISIIS,fault
Fault signal delay after
open load detection at offstate 1)
tdop(fault)
10
µs
VIN=0V, VOUT>VOUT(OL)
Fault signal delay after
input negative slope 1)
tdoff(fault)
10
µs
VIN=4.5V to 0V
Fault signal delay after
power limitation invalid 1)
Fault signal delay after
absolute thermal shutdown
1)
Remark) All voltages refer to ground pin of the device
1) not subjected production test, guaranteed by design
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 10 of 39
μPD166038T1J Datasheet
3. Specification
3.6 Feature Description
3.6.1 Driving Circuit
The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is
open or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal
is pulled down with constant current source.
VIN
IN
RESD
0
VOUT
IIN
Vcc
Internal ground
OFF
ON
OFF
ON
0
t
Switching a resistive load
GND
Switching lamps
VIN
VIN
0
0
IL
IL
0
0
VOUT
VOUT
Vcc
0
0
IIS
IIS
0
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
t
0
t
Page 11 of 39
μPD166038T1J Datasheet
3. Specification
Switching an inductive load
VIN
0
IL
0
VOUT
Vcc
0
Von,clamp
IIS
0
t
The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off,
the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the
source of SW1 (= gate of output MOS) falls below the GND voltage.
SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit.
When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND.
SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is
not activated.
VCC
RESD
IN
SEN
ZDAZ ZDAZ
RESD
SW1
logic
ZDESD
OUT
Internal ground
GND
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
IS
Page 12 of 39
μPD166038T1J Datasheet
3. Specification
3.6.2 Device behavior at over voltage condition
In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of
logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load
from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC.
VCC
IN
RIN
SEN
RESD
RESD
ZDAZ
ZDESD
N-ch
MOSFET
logic
RSEN
ZDAZ
ZDESD
uC
OUT
IPD
Internal ground
GND
IS
RGND
RIS
RL
3.6.3 Device behavior at low voltage condition
If the voltage supply (VCC) goes down under VCC(Uv), the device outputs shuts down. If voltage supply (VCC) increase
over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown.
The IS output is cleared during off-state.
VIN
0
IL
0
VCC
VCC(CPr)
VOUT
VCC(Uv)
0
t
3.6.4 Loss of Ground protection
In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off
if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state.
In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage.
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 13 of 39
μPD166038T1J Datasheet
3. Specification
3.6.5 Short circuit protection
Turn-on in an over load condition including short circuit condition
The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched
until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device
restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected
and restarts automatically in absolute thermal toggling mode. The sense pin output Iis,fault during power limitation
mode or thermal toggling mode.
(a) IL > IL(SC)
(b) deltaTch > dTth
(c) Tch > aTth
Over load condition including short circuit condition during on-state
The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2).
The device shuts down automatically when condition (b) is detected. The device restarts automatically in power
limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in
absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
(a) Von > Von(CL2)
(b) deltaTch > dTth
(c) Tch > aTth
Power limitation control
Current limitation control with IL(CL) when auto restart from deltaTch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta
Tch protection, if Von<Von(CL1) depends on short circuit impedance condition, the device does not operate as current
limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling
operation with power limitation mode.
Absolute thermal toggling
Current limitation control with IL(TT) when auto restart from absolute Tch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from
absolute Tch protection, if Von<Von(CL1) depends on short circuit impedance condition, the device does not operate as
current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during
toggling operation with thermal toggling mode.
delta Tch
Junction temperature differences between thermal sensor of power area and thermal sensor of control area.
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 14 of 39
μPD166038T1J Datasheet
3. Specification
3.6.6 Device behavior at reverse current conduction during on-state
During on-state(VIN>VIH) the device might shut down automatically when Vout>Vcc+0.3V is detected.
And the sense pin outputs Iis,fault if the device shuts down.
If restart is required, please reset via input pin when detect the Iis.fault.
VCC
VCC
IN
Irev
OUT
>VIH
SEN
VIN
IS
GND
>VSENH
Vout
RIS
VIS
VSEN
VIN
0
VSEN
0
Vcc
Vout
0
Iout
0
Irev
VIS
Iis.fault
0
t
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 15 of 39
μPD166038T1J Datasheet
3. Specification
State transition diagram
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
No
Thermal
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
No
Yes
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
IL(lim)=IL(TT)
Yes
Input
Return
B
Von < Von(CL2)
Current limitation
No
A
Yes
dTch > dTth
Thermal
Thermal
No
Yes
Shutdown
IL(lim)=IL(CL)
IL > IL(lim)
Yes
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IL(lim)=IL(CL)
IN = Low
No
Yes
Input
C
Return
Shutting down
No
Yes
IN = Low
No
Turn-on
Yes
C
Turn-off
B
Return
IL(lim) initial value is power MOSFET saturation current.
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Page 16 of 39
μPD166038T1J Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(a) IL > IL(SC)
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
No
Thermal
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
No
Yes
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
IL(lim)=IL(TT)
Yes
Input
Return
B
Von < Von(CL2)
Current limitation
No
A
Yes
dTch > dTth
Thermal
Thermal
No
Yes
Shutdown
IL(lim)=IL(CL)
IL > IL(lim)
Yes
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IL(lim)=IL(CL)
IN = Low
No
Yes
Input
C
Return
Shutting down
No
Yes
IN = Low
No
Before over current detection
Yes
C
Turn-off
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Turn-on
After over current detection
Exit from off-latch
B
Return
Page 17 of 39
μPD166038T1J Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(b) deltaTch > dTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
No
Thermal
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
No
Yes
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
IL(lim)=IL(TT)
Yes
Input
Return
B
Von < Von(CL2)
Current limitation
A
No
Yes
dTch > dTth
Thermal
Thermal
No
Yes
Shutdown
IL(lim)=IL(CL)
IL > IL(lim)
Yes
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IL(lim)=IL(CL)
IN = Low
No
Yes
Input
C
Return
Shutting down
No
Yes
IN = Low
No
Before dTcht detection
Yes
C
Turn-off
Turn-on
During shutdowning by dTth detection
During current limit by saturation current
B
Return
Exit from current limitation control
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μPD166038T1J Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(c) Tch > aTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
No
Thermal
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
No
Yes
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
IL(lim)=IL(TT)
Yes
Input
Return
B
Von < Von(CL2)
Current limitation
A
No
Yes
dTch > dTth
Thermal
Thermal
No
Yes
Shutdown
IL(lim)=IL(CL)
IL > IL(lim)
Yes
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IL(lim)=IL(CL)
IN = Low
No
Yes
Input
C
Return
Shutting down
No
Yes
IN = Low
No
Before aTcht detection
Yes
C
Turn-off
Turn-on
During shutdowning by aTth detection
During current limitation control
B
Return
Exit from power limitation control
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μPD166038T1J Datasheet
3. Specification
An over load condition which is include a short circuit condition during on-state
(a) Von > Von(CL) with weak short condition
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
No
Thermal
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
No
Yes
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
IL(lim)=IL(TT)
Yes
Input
Return
B
Von < Von(CL2)
Current limitation
A
No
Yes
dTch > dTth
Thermal
Thermal
No
Yes
Shutdown
IL(lim)=IL(CL)
IL > IL(lim)
Yes
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IL(lim)=IL(CL)
IN = Low
No
Yes
Input
C
Return
Shutting down
No
Yes
IN = Low
No
Before Von(CL) detection after turn on
Yes
C
Turn-off
Turn-on
After Von(CL) detection
During shutdowning by dTth detection
B
Return
During current limitation control
Exit from power limitation control
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μPD166038T1J Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(a) Von > Von(CL) with dead condition
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
No
Thermal
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
No
Yes
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
IL(lim)=IL(TT)
Yes
Input
Return
B
Von < Von(CL2)
Current limitation
No
A
Yes
dTch > dTth
Thermal
Thermal
No
Yes
Shutdown
IL(lim)=IL(CL)
IL > IL(lim)
Yes
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IL(lim)=IL(CL)
IN = Low
No
Yes
Input
C
Return
Shutting down
No
Yes
IN = Low
No
Before Von(CL) detection after turn on
Yes
C
Turn-off
Turn-on
After Von(CL) detection
After over current detection
B
Return
Exit from power limitation control
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μPD166038T1J Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(b) deltaTch > dTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
No
Thermal
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
No
Yes
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
IL(lim)=IL(TT)
Yes
Input
Return
B
Von < Von(CL2)
Current limitation
No
A
Yes
dTch > dTth
Thermal
Thermal
No
Yes
Shutdown
IL(lim)=IL(CL)
IL > IL(lim)
Yes
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IL(lim)=IL(CL)
IN = Low
No
Yes
Input
C
Return
Shutting down
No
Yes
IN = Low
No
Turn-on
Yes
C
Turn-off
Before dTth detection after turn on
During shutdowning by dTth detection
B
Return
Exit from thermal protection control
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μPD166038T1J Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(c) Tch > aTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
No
Thermal
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
No
Yes
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
IL(lim)=IL(TT)
Yes
Input
Return
B
Von < Von(CL2)
Current limitation
No
A
Yes
dTch > dTth
Thermal
Thermal
No
Yes
Shutdown
IL(lim)=IL(CL)
IL > IL(lim)
Yes
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IL(lim)=IL(CL)
IN = Low
No
Yes
Input
C
Return
Shutting down
No
Yes
IN = Low
No
Before aTth detection after turn on
Yes
C
Turn-off
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Turn-on
During shutdowning by aTth detection
Exit from thermal protection control
B
Return
Page 23 of 39
μPD166038T1J Datasheet
3. Specification
3.6.7 Diagnostic signal
Truth table
Normal Operation
SEN
Input
Output
Diagnostic output 2)
H
H
VCC
IIS = IL/KILIS
L
L 1)
< 1uA (Iis,dis)
H
L
1)
L
L 1)
Shutdown by over
current detection
Iis,fault 3)
< 1uA (Iis,dis)
VOUT 6)
H
Power limitation
L
Iis,fault 4)
L 1)
< 1uA (Iis,dis)
H
Short circuit to VCC
Open Load
X 8)
L
Iis,fault 4) in case of Von>Von(CL1)
L 1)
VOUT 6)
Thermal toggling
IIS = IL/KILIS in case of Von<Von(CL1)
IIS = IL/KILIS in case of Von<Von(CL1)
Iis,fault 5) in case of Von>Von(CL1)
L 1)
Iis, fault 5)
L
L 1)
< 1uA (Iis,dis)
H
VCC
L
VOUT
H
VCC
L
VOUT
X 8)
X 8)
< 2uA (Iis,offset)
7)
Iis,fault in case of VOUT>VOUT(OL)
< 2uA (Iis,offset)
7)
Iis,fault in case of VOUT>VOUT(OL)
< 1uA (Iis,dis)
1) In case of OUT terminal is connected to GND via load.
2) In case of IS terminal is connected to GND via resister.
3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection.
4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1).
5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1)..
6) VOUT depends on the short circuit condition
7) VOUT depends on the ratio of VCC-OUT-GND resistive component.
8) Don’t care
Note: IS terminal output Iis,fault if Von>Von(CL1) within certain time (500us typ.) after turn on.
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μPD166038T1J Datasheet
3. Specification
Current sense output
The device output analog feedback current proportional to output current from IS pin. In the case of much higher
current than nominal load current, current sense output is saturated.
IIS
KILIS=IL/IIS
IL
Sense current under fault condition
The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection,
during power limitation and during thermal toggling. IIS,fault is specified with RIS=1kohm condition. IIS,fault is
attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For
example, In the case of RIS=1kohm, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be
9V to 3.5V if VCC=13.5V. In the case of RIS is higher than 1kohm, Operation point as IIS,fault is lower than specified
value but VIS should be higher than RIS=1kohm condition.
IIS,fault
1kohm load line
VCC
9mA
VCC-VIS
VCC
IS
3.5mA
GND
VIS
VCC-VIS
VIS
RIS
VCC-VIS
VCC
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μPD166038T1J Datasheet
3. Specification
Sense current settling time
VIN
VSEN
VOUT
tsis(on)
tsis(LC)
tssen(off) tssen(on)
tsis(LC)
tsis(off)
IIS
Fault signal delay time at over current detection
VIN
VSEN
Over current detection
VOUT
Iis,fault
IIS
tdsc(fault)
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μPD166038T1J Datasheet
3. Specification
Fault signal delay time at power limitation
VIN
VSEN
Short circuit appear
Short circuit disappear
Power limitation
VOUT
tdpl(fault)
IIS
tdpl(off)
Iis,fault
Fault signal delay time at Thermal toggling
VIN
VSEN
Short circuit appear
Power
limitation
VOUT
Short circuit disappear
Thermal toggling
tdpl(fault)
tdpl(off)
Iis,fault
IIS
tsis(off)
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μPD166038T1J Datasheet
3. Specification
Fault signal delay time at open load detection
VIN
VSEN
Open load condition appear
Open load detection
Open load detection
VOUT
Iis,fault
tdop
tdop(fault)
IIS
Iis,offset
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
Iis,dis
Page 28 of 39
μPD166038T1J Datasheet
3. Specification
3.6.8 Nominal load
Product
Nominal load
3.4ohm
NHD020B
3.6.9 Driving Capability
Driving Capability is specified as load impedance including on state resistance in case of this product. Over current
detection characteristics is designed below Driving Capability characteristics. If estimated load impedance which comes
from peak inrush current is higher than Driving Capability characteristics, this means, the device does not detect inrush
current as over current and does not shutdown the output. Depend on the conditions, Power Limitation function may
work during inrush current. If estimated load impedance which comes from peak inrush current is higher than Driving
Capability characteristics, Power limitation disappear within 30ms. This parameter does not mean that the device can
drive the resistive load up to Driving Capability characteristics.
VIN
IL [A]
IL(SC) characteristics
t
IL(SC) specified point
75
NHD020B: 47A
5
Driving Capability:
13.5
IL
Von [V]
t
30ms
NHD020B:180mΩ
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μPD166038T1J Datasheet
3. Specification
3.6.10 Cross current protection in case of H-bridge high side usage
In case of using High side driver in H-bridge circuit,
Vbat
High side driver protects High side driver itself
and also low side driver from high power dissipation
by cross current when low side driver switching on.
VCC
OFF
VCC
IN
ON
IN
OUT
OUT
Cross
Motor
M
current
PWM ON
current
OFF
3.6.11 Measurement condition
Switching waveform of OUT terminal
VIN
ton
toff
td(on)
td(off)
90%
70%
VOUT
dV/dton
30%
10%
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
90%
70%
-dV/dtoff
30%
10%
Page 30 of 39
μPD166038T1J Datasheet
3. Specification
3.7 Package drawing
12-pin Power HSSOP
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μPD166038T1J Datasheet
3. Specification
3.8 Taping information
uPD166038T1J
3.9 Marking information
uPD166038T1J
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μPD166038T1J Datasheet
4. Typical characteristics
4. Typical characteristics
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4. Typical characteristics
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4. Typical characteristics
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4. Typical characteristics
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4. Typical characteristics
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μPD166038T1J Datasheet
5. Thermal characteristics
5. Thermal characteristics
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μPD166038T1J Datasheet
6. Application example in principle
6. Application example in principle
RIN, RSEN, RAN values are in range of 2k to 50kohm depending microcontroller while R_L value is typically 4kohm.
If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s
value is typically 100kohm
GND Network recommendation
In case of V_loaddump < 35V
In case of 35V < V_loaddump < 42V
Vbat
Vbat
VCC
VCC
GND
GND
RGND
External diode is recommended in order to
prevent reverse current toward control logic
part at reverse battery condition.
External diode and resistor are recommended
in order to prevent reverse current toward
control logic part at reverse battery condition
and limit the current through ZDAZ at load
dump condition. 100ohm is recommended as
RGND.
Note: If other component is installed to prevent reverse current at reverse battery condition,
diode is not required in GND Network.
Note: Approx. 10kohm additional resistor in parallel with diode is recommended depends on
Vf- If performance of the diode.
R07DS1115EJ0201 Rev.2.01
Jul 02, 2015
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μPD166038T1J Datasheet
Revision History
Description
Rev.
1.00
2.00
2.01
Date
Sep. 17, 2013
May 22, 2015
Jul. 01, 2015
Page
1-38
15
16-23
Summary
1st issue
"Device behavior at reverse current conduction during on-state" is added.
Von(NL) is deleted from State transition diagram.
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