LRC LMBT4403DW1T1G Dual small signal surface mount transistor Datasheet

LESHAN RADIO COMPANY, LTD.
DUAL SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
LMBT4403DW1T1G
S-LMBT4403DW1T1G
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
6
5
4
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
1
2
Device
Marking
LMBT4403DW1T1G
S-LMBT4403DW1T1G
LMBT4403DW1T3G
S-LMBT4403DW1T3G
Shipping
3
2T
3000/Tape&Reel
2T
10000/Tape&Reel
SOT-363/SC-88
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
Emitter–Base Voltage
V CBO
V EBO
– 40
– 40
– 5.0
Vdc
Vdc
Vdc
IC
– 600
mAdc
Collector Current — Continuous
Symbol
Max
Unit
PD
150
mW
RJA
833
°C/W
TJ, Tstg
–55 to +150
°C
Total Package Dissipation(1)
TA = 25°C
Thermal Resistance Junction to
Ambient
Junction and Storage
Temperature Range
5
4
C1
B2
E2
Q2
Q1
THERMAL CHARACTERISTICS
Characteristic
6
E1
B1
C2
1
2
3
DEVICE MARKING
LMBT4403DW1T1G=2T
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
– 40
—
– 40
—
– 5.0
—
—
– 0.1
—
– 0.1
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
V (BR)CEO
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –0.1mAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –0.1mAdc, I C = 0)
Base Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
Collector Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
Vdc
V (BR)CBO
Vdc
V (BR)EBO
Vdc
µAdc
I BEV
µAdc
I CEX
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LMBT4403DW1T1G;S-LMBT4403DW1T1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
30
60
100
100
20
––
––
––
300
––
––
––
– 0.4
– 0.75
– 0.75
––
– 0.95
– 1.3
200
––
––
8.5
––
30
1.5
15
Unit
ON CHARACTERISTICS
DC Current Gain
(I C = –0.1 mAdc, V CE = –1.0 Vdc)
(I C = –1.0 mAdc, V CE = –1.0 Vdc)
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –150 mAdc, V CE = –2.0 Vdc)(3)
(I C = –500 mAdc, V CE = –2.0 Vdc)(3)
Collector–Emitter Saturation Voltage(3)
(I C = –150mAdc, I B = –15 mAdc)
(I C = –500 mAdc, I B = –50 mAdc)
Base–Emitter Saturation Voltage (3)
(I C = –150 mAdc, I B = –15 mAdc)
(I C = –500 mAdc, I B = –50 mAdc)
hFE
––
VCE(sat)
V
Vdc
Vdc
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –20mAdc, V CE= –10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(V CB= –10 Vdc, I E = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(V BE = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
fT
C
MHz
pF
cb
C eb
pF
h ie
kΩ
h re
X 10
0.1
8.0
60
500
1.0
100
h fe
–4
—
µmhos
h oe
SWITCHING CHARACTERISTICS
Delay Time
(V CC = – 30 Vdc, V EB = –2.0 Vdc,
td
—
15
Rise Time
I C = –150mAdc, I B1 = –15 mAdc)
tr
—
20
ns
Storage Time
(V CC = –30 Vdc, I C = –150 mAdc,
ts
—
225
ns
Fall Time
I B1 = I B2 = –15 mAdc)
tf
—
30
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
– 30 V
– 30 V
200
+2.0V
<2.0 ns
200
< 20 ns
+ 14V
1.0 k
1.0 k
0
0
C S* < 10 pF
–16 V
1.0 to 100µs,
DUTY CYCLE = 2%
Figure 1. Turn–On Time
1N916
–16 V
C S*< 10 pF
1.0 to 100µs,
DUTY CYCLE = 2%
+4.0 V
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 2. Turn–Off Time
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LMBT4403DW1T1G;S-LMBT4403DW1T1G
TYPICAL TRANSIENT CHARACTERISTICS
T J = 25°C
T J = 100°C
30
10
7.0
C eb
10
7.0
C cb
5.0
3.0
2.0
1.0
0.7
0.5
QT
0.3
3.0
2.0
0.1
QA
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
10
20
30
50
70
100
200
REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
300
500
100
100
I C /I B = 10
70
t r, RISE TIME (ns)
t r @V CC=30V
t r @V CC=10V
30
t d@VBE(off) = 2.0V
t d@VBE(off) = 0V
20
V CC= 30V
I C / I B =10
70
50
50
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
300
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise Time
200
I C/I B = 20
t s , RISE TIME (ns)
t , TIME (ns)
V CC = 30 V
I C / I B = 10
5.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
100
I C/I B = 10
70
50
t s’ = t s – 1/8 t f
I B1 = I B2
30
20
10
20
30
50
70
100
200
300
500
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Rev.O 3/6
500
LESHAN RADIO COMPANY, LTD.
LMBT4403DW1T1G;S-LMBT4403DW1T1G
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = –10 Vdc, T A = 25°C
Bandwidth = 1.0 Hz
10
10
f = 1.0 kHz
8
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8
I C = 1.0 mA, R S = 430Ω
I C = 500 µA, R S = 560Ω
6
I C = 50 µA, R S = 2.7kΩ
I C = 100 µA, R S = 1.6 kΩ
4
2
RS = OPTIMUM SOURCE RESISTANCE
0
I C = 50 µA
100 µA
500 µA
1.0 mA
6
4
2
0
0.010.02 0.05 0.1 0.2
0.5 1.0
2.0
5.0 10
20
50
100
50 100
200
500
1k
2k
5k
10k
20k
f , FREQUENCY (kHz)
R S, SOURCE RESISTANCE (Ω)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
50k
h PARAMETERS
(V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves,
a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly
numbered curves on each graph.
100
700
50
h ie, INPUT IMPEDANCE (kΩ)
1000
h fe, CURRENT GAIN
500
300
200
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
100
70
50
MMBT4403LT1 UNIT 2
20
10
5
2
1
0.5
0.2
0.1
30
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
Figure 11. Input Impedance
20
10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.1
10
h oe , OUTPUT ADMITTANCE ( µmhos)
h re, VOLTAGE FEEDBACK RATIO (X 10 –4 )
MMBT4403LT1 UNIT 1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
10
500
100
50
20
MMBT4403LT1 UNIT 1
10
MMBT4403LT1 UNIT 2
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
Rev.O 4/6
10
LESHAN RADIO COMPANY, LTD.
LMBT4403DW1T1G;S-LMBT4403DW1T1G
STATIC CHARACTERISTICS
h FE , NORMALIZED CURRENT GAIN
3.0
V CE= 1.0 V
V CE= 10 V
2.0
T J = 125°C
25°C
1.0
–55°C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
20
300
500
I C , COLLECTOR CURRENT (mA)
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
0.8
0.6
I C=1.0 mA
10 mA
100mA
500mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05
0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
I B , BASE CURRENT (mA)
Figure 15. Collector Saturation Region
+ 0.5
T J = 25°C
V, VOLTAGE ( VOLTS )
0
V BE(sat) @ I C /I B =10
0.8
0.6
COEFFICIENT (mV/ °C)
10
V BE @ V CE =1.0 V
0.4
0.2
V CE(sat) @ I C /I B =10
θ VC for VCE(sat)
– 0.5
–1.0
–1.5
θ VS for V BE
–2.0
– 2.5
0
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
Figure 17. Temperature Coefficients
500
Rev.O 5/6
LESHAN RADIO COMPANY, LTD.
LMBT4403DW1T1G;S-LMBT4403DW1T1G
SC-88/SOT-363
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
G
DIM
6
5
4
- B-
S
1
2
3
0.2 (0.008) M B M
D6PL
N
J
A
B
C
D
G
H
J
K
N
S
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
C
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4.EMITTER 1
5. BASE 1
6.COLLECTOR 2
K
H
0.4 mm (min)
0.65 mm 0.65 mm
0.5 mm (min)
1.9 mm
Rev.O 6/6
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