ACE ACE4494M N-channel 100-v mosfet Datasheet

ACE4494M
N-Channel 100-V MOSFET
Description
The ACE4494M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
•
•
•
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
•
•
•
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Continuous
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
TA=25℃
Drain Current a
TA=70℃
ID
11
9
A
Pulsed Drain Current b
IDM
80
A
Continuous Source Current (Diode Conduction) a
IS
5
A
TA=25℃
Power Dissipation a
TA=70℃
Operating temperature / storage temperature
PD
3.1
2.2
TJ/TSTG -55~150
W
℃
THERMAL RESISTANCE RATINGS
Symbol
Parameter
Maximum Junction-to-Ambient
a
t <= 10 sec
Steady State
RθJA
Maximum
40
80
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1
1
ACE4494M
N-Channel 100-V MOSFET
Packaging Type
SOP-8
Ordering information
ACE4494M FM + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.1
2
ACE4494M
N-Channel 100-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 uA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±20 V
±100
IDSS
VDS = 80 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
Test Conditions
Static
Min
Typ
Max Unit
1
V
VDS = 80 V, VGS = 0 V, TJ = 55°C
On-State Drain Current
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-Resistance
RDS(ON)
25
16
nA
uA
A
VGS = 10 V, ID = 8.5 A
18
VGS = 5.5 V, ID = 6.8 A
23
mΩ
Forward Transconductance
gFS
VDS = 15 V, ID = 8.5 A
22
S
Diode Forward Voltage
VSD
IS = 2.5 A, VGS = 0 V
0.7
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
37
Turn-On Delay Time
td(on)
26
Rise Time
tr
VDS = 50 V, RL = 5.8 Ω, ID = 8.5 A,
Turn-Off Delay Time
td(off)
VGEN = 10 V, RGEN = 6 Ω
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
60
VDS = 50 V, VGS = 5.5 V, ID = 8.5 A
16
nC
62
124
ns
60
4927
VDS = 15 V, VGS = 0 V, f = 1 MHz
404
pF
373
Note :
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing
VER 1.1
3
ACE4494M
N-Channel 100-V MOSFET
Typical Performance Characteristics
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
VGS - Gate-to-Source Voltage (V)
2. Transfer Characteristics
VSD - Source-to-Drain Voltage (V)
4. Drain-to-Source Forward Voltage
VDS-Drain-to-Source Voltage (V)
6. Capacitance
VER 1.1
4
ACE4494M
N-Channel 100-V MOSFET
Typical Performance Characteristics
Qg - Total Gate Charge (nC)
7. Gate Charge
VDS Drain to Source Voltage (V)
9. Safe Operating Area
TJ -JunctionTemperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1
5
ACE4494M
N-Channel 100-V MOSFET
Packing Information
SOP-8
DIM
MILLMETERS
MIN
NOM
MAX
A
1.35
1.55
1.75
A(1)
0.10
0.18
0.25
B
0.38
0.45
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E
3.80
3.90
4.00
e
1.27 BSC
H
5.8
6.00
6.20
L
0.50
0.72
0.93
0
a
0
4
8
h
0.25
0.38
0.50
Unit: mm
VER 1.1
6
ACE4494M
N-Channel 100-V MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7
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