DMN6040SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V(BR)DSS Features and Benefits ID RDS(ON) Max TA = +25°C 40mΩ @ VGS = 10V 5.0A 55mΩ @ VGS = 4.5V 4.4A 60V Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Data Sheet (DMN6040SSDQ) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) making it ideal for high efficiency power management applications. DC-DC Converters Power Management Functions Backlighting S1 D1 G1 D1 S2 D2 G2 D2 Top View Top View Pin Configuration D1 G1 D2 G2 S1 S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN6040SSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information = Manufacturer’s Marking N6040SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 16= 2016) WW = Week (01 - 53) DMN6040SSD Document number: DS35673 Rev. 5 - 2 1 of 7 www.diodes.com November 2016 © Diodes Incorporated DMN6040SSD Maximum Ratings (@TA = +25°C unless otherwise specified) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Value 60 ±20 5.0 4.1 ID A 6.6 5.3 2.5 30 30 14.2 10 ID Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V IS IDM ISM IAS EAS A A A A A mJ Thermal Characteristics (@TA = +25°C unless otherwise specified) Characteristic Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics RθJC TJ, TSTG Value 1.3 0.8 102 61 1.7 1.1 75 50 14.5 -55 to +150 Units W °C/W W °C/W °C (@TA = 25°C unless otherwise specified) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 100 100 V nA nA VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) |YFS| VSD 30 35 4.5 0.7 3 40 55 1.2 V Static Drain-Source On-Resistance 1 VDS = VGS, ID = 250µA VGS = 10V, ID = 4.5A VGS = 4.5V, ID = 3.5A VDS = 10V, ID = 4.3A VGS = 0V, IS = 1A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR 1,287 57 44 1.2 22.4 10.4 4.9 3.0 6.6 8.1 20.1 4.0 18 11.9 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ S V Test Condition pF VDS = 25V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 30V, ID = 4.3A ns VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A ns nC IS = 4.3A, di/dt = 100A/μs IS = 4.3A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN6040SSD Document number: DS35673 Rev. 5 - 2 2 of 7 www.diodes.com November 2016 © Diodes Incorporated DMN6040SSD 20 20 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 12 8 12 8 TA = 150°C TA = 125°C 4 4 TA = 85°C T A = 25°C 0 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.10 0.09 0.08 0.07 0.06 0.05 VGS = 4.5V 0.04 0.03 VGS = 10V 0.02 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = -55°C 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE Fig.2 Typical Transfer Characteristics 5 0.10 0.08 0.06 ID = 3.5A ID = 4.5A 0.04 0.02 20 0 0 1 2 3 4 5 6 7 8 9 V GS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage 10 2.4 0.10 0.09 2.2 VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION VDS = 5.0V TA = 150°C 0.08 0.07 TA = 125°C 0.06 0.05 T A = 85°C 0.04 TA = 25°C 0.03 0.02 TA = -55°C 0.01 VGS = 10V ID = 10A 2.0 1.8 1.6 1.4 VGS = 4.5V ID = 5A 1.2 1.0 0.8 0.6 0.4 0.2 0 0 4 8 12 16 ID, DRAIN CURRENT Fig. 5 Typical On-Resistance vs. Drain Current and Temperature DMN6040SSD Document number: DS35673 Rev. 5 - 2 20 3 of 7 www.diodes.com 0 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature November 2016 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 4.0 0.10 0.08 VGS = 4.5V ID = 500mA 0.06 0.04 VGS = 2.5V ID = 200mA 0.02 3.5 3.0 2.5 ID = 1mA 2.0 1.5 ID = 250µA 1.0 0.5 0 - 50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 On-Resistance Variation with Temperature CT, JUNCTION CAPACITANCE (pF) 20 IS, SOURCE CURRENT (V) 16 TA = 25°C 12 8 4 Ciss Coss Crss f = 1MHz 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig.9 Diode Forward Voltage vs. Current 0 1.2 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 30 100 VDS = 30V ID = 4.3A VGS GATE THRESHOLD VOLTAGE (V) 10 I D, DRAIN CURRENT (A) ADVANCE INFORMATION DMN6040SSD DC 1 PW = 10s PW = 1s 0.1 0.01 PW = 100ms TJ(m ax) = 150°C TA = 25°C V GS = 10V Single Pulse PW = 10ms PW = 1ms PW = 100µs DUT on 1 * MRP Board 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Charge DMN6040SSD Document number: DS35673 Rev. 5 - 2 25 0.001 0.1 4 of 7 www.diodes.com 1 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 November 2016 © Diodes Incorporated DMN6040SSD r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 Rthja(t)=r(t) * Rthja Rthja=100C/W D = 0.005 Duty Cycle, D=t1 / t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance DMN6040SSD Document number: DS35673 Rev. 5 - 2 5 of 7 www.diodes.com November 2016 © Diodes Incorporated DMN6040SSD Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 E 1 b E1 h es) ll sid 7° A R 1 0. e Q 45° A 9° ( c 4°±3° A1 E0 L Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMN6040SSD Document number: DS35673 Rev. 5 - 2 X 6 of 7 www.diodes.com November 2016 © Diodes Incorporated DMN6040SSD ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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