Preliminary Technical Information IXTN5N250 High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 = 2500V = 5A Ω < 8.8Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 5 A IDM TC = 25°C, Pulse Width Limited by TJM 20 A IA TC = 25°C 2.5 A EAS TC = 25°C 2.5 J PD TC = 25°C 700 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ S D G = Gate S = Source Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features z VISOL 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight D = Drain z z z z International Standard Package Molding Epoxies Meet UL94 V-0 Flammability Classification Guaranteed FBSOA at 75°C miniBLOC with Aluminum Nitride Isolation Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 2500 VGS(th) VDS = VGS, ID = 1mA 2.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = 2kV, VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved z z V 5.0 V ±200 nA z Applications 50 μA 4 mA z Ω z 8.8 Easy to Mount Space Savings High Power Density z High Voltage Power Supplies Capacitor Discharge Pulse Circuits DS100273A(08/10) IXTN5N250 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 3.0 VDS = 50V, ID = 0.5 • ID25, Note 1 4.5 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz tr td(off) tf pF 315 pF 90 pF 33 ns 20 ns 90 ns 44 ns 200 nC 28 nC 70 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs S 8560 Crss td(on) 6.0 SOT-227B (IXTN) Outline VGS = 10V, VDS = 1000V, ID = 0.5 • ID25 Qgd (M4 screws (4x) supplied) 0.18 °C/W RthJC RthCS °C/W 0.05 Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 2000V, ID = 0.11A, TC = 75°C, tp = 3s 220 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = 2.5A, -di/dt = 100A/μs, VR = 100V Note: 5 A 20 A 1.5 V μs 1.2 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN5N250 Fig. 2. Output Characteristics @ T J = 125ºC Fig. 1. Output Characteristics @ T J = 25ºC 2.5 5 4.5 VGS = 10V 5V 4V ID - Amperes 3.5 ID - Amperes VGS = 10V 2 4 3 2.5 2 1.5 1 4V 1.5 1 3V 0.5 0.5 3V 0 0 0 5 10 15 20 25 30 35 0 5 10 15 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 2.5A Value vs. Junction Temperature 25 30 35 Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs. Drain Current 3.0 2.6 VGS = 10V VGS = 10V 2.4 2.6 2.2 2.2 R DS(on) - Normalized R DS(on) - Normalized 20 VDS - Volts 1.8 I D = 5A 1.4 I D = 2.5A 1.0 TJ = 125ºC 2.0 1.8 1.6 1.4 1.2 TJ = 25ºC 0.6 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0 150 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 5 6 4.5 5 4 3.5 ID - Amperes ID - Amperes 4 3 2 TJ = 125ºC 3 25ºC 2.5 - 40ºC 2 1.5 1 1 0.5 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2010 IXYS CORPORATION, All Rights Reserved 100 125 150 2.0 2.5 3.0 3.5 VGS - Volts 4.0 4.5 5.0 IXTN5N250 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 16 8 14 7 TJ = - 40ºC 12 5 10 IS - Amperes g f s - Siemens 6 25ºC 4 125ºC 3 8 6 2 4 1 2 0 TJ = 125ºC TJ = 25ºC 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.2 0.3 0.4 0.5 0.6 ID - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 Fig. 10. Capacitance Fig. 9. Gate Charge 10 100,000 VDS = 1000V f = 1 MHz Capacitance - PicoFarads I D = 2.5A 8 VGS - Volts 0.7 VSD - Volts I G = 10mA 6 4 Ciss 10,000 1,000 Coss 100 2 Crss 10 0 0 20 40 60 80 100 120 140 160 180 200 0 220 5 10 20 25 30 35 40 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Forward-Bias Safe Operating Area @ T C = 75ºC @ T C = 25ºC 100 100 RDS(on) Limit RDS(on) Limit 25µs 100µs 10 ID - Amperes ID - Amperes 10 1ms 1 100µs 1ms 1 10ms 10ms TJ = 150ºC TJ = 150ºC 100ms TC = 25ºC Single Pulse 0.1 100 15 VDS - Volts QG - NanoCoulombs TC = 75ºC Single Pulse DC 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 100 100ms DC 1,000 VDS - Volts 10,000 IXTN5N250 Fig. 12. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaaa 0.3 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: IXT_5N250(9P)8-13-10-A