Renesas NESG7030M04 Npn silicon germanium carbon rf transistor Datasheet

Data Sheet
NESG7030M04
R09DS0037EJ0100
Rev.1.00
Apr 18, 2012
NPN Silicon Germanium Carbon RF Transistor
FEATURES
• The device is an ideal choice for low noise, high gain amplification.
NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
• PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz
• Maximum stable power gain: MSG =16.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 5.8 GHz
• SiGe: C HBT technology
• This product is improvement of ESD.
• Flat-lead 4-pin thin-type super minimold (M04 PKG)
OUTLINE
RENESAS Package code : M04
(Package name : Flat-lead 4-pin thin-type super minimold (M04 PKG))
4
3
1
2
1.
2.
3.
4.
Note : Marking is "T1R."
Emitter
Collector
Emitter
Base
ORDERING INFORMATION
Part Number
NESG7030M04
Order Number
NESG7030M04-A
NESG7030M04-T2
NESG7030M04-T2B
NESG7030M04-T2-A
NESG7030M04-T2B-A
Package
Quantity
Flat-lead 4-pin thintype super minimold
(M04 PKG)
(Pb-Free)
50 pcs
(Non reel)
3 kpcs/reel
15kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1(Emitter), Pin 2
(Collector) face the
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 1 of 9
NESG7030M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Base Current
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
IB Note1
IC
Ptot Note2
Tj
Tstg
Ratings
10
4.3
2
30
125
150
−65 to +150
Unit
V
V
mA
mA
mW
°C
°C
Notes: 1. Depend on the ESD protect device.
2
2. Mounted on 1.08 cm ×1.0 mm (t) glass epoxy PWB
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Reverse Transfer Capacitance
Insertion Power Gain
Maximum Stable Power Gain
Noise Figure (1)
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
ICBO
VCB = 4.3 V, IE = 0
−
−
100
nA
IEBO
VEB = 0.4 V, IC = 0
VCE = 2 V, IC = 5 mA
−
200
−
320
100
500
nA
−
VCB = 2 V, IE = 0, f = 1 MHz
VCE = 2 V, IC = 15 mA, f = 5.8 GHz
VCE = 2 V, IC = 15 mA, f = 5.8 GHz
−
11.0
−
50
13.0
16.5
80
−
−
fF
dB
dB
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
−
0. 5
−
dB
hFE
Note 1
Cre Note 2
⏐S21e⏐2
MSG Note 3
NF1
Associated Gain (1)
Ga1
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
−
21.0
−
dB
Noise Figure (2)
NF2
VCE = 2 V, IC = 5 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.75
1.15
dB
Associated Gain (2)
Ga2
VCE = 2 V, IC = 5 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
12.0
14.0
−
dB
−
4.5
−
dBm
Gain 1 dB Compression Output
Power
PO (1 dB)
VCE = 2 V, IC (set) = 10 mA,
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
S21
3. MSG =
S12
hFE CLASSIFICATION
Rank
YFB
Marking
T1R
hFE Value
200 to 500
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 2 of 9
NESG7030M04
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
250
Mounted on Glass Eploxy PWB
(1.08 cm2 × 1.0 mm (t) )
200
150
125
100
50
0
0
25
50
75
100
125
100
f = 1 MHz
90
80
70
60
50
40
30
20
10
0
0
150
1
2
3
4
5
Ambient Temperature TA (°C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
15
100
10
Collector Current IC (mA)
Collector Current IC (mA)
VCE = 2.0 V
1
0.1
0.01
0.001
0.0001
0.4
0.6
0.8
1.0
40 μA
36 μA
32 μA
28 μA
24 μA
20 μA
10
16 μA
5
12 μA
8 μA
0
IB = 4 μA
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
DC Current Gain hFE
VCE = 2.0 V
100
10
0.1
1
10
100
Collector Current IC (mA)
Remark The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 3 of 9
NESG7030M04
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
VCE = 1 V
f = 2 GHz
35
Gain Bandwidth Product fT (GHz)
Gain Bandwidth Product fT (GHz)
40
30
25
20
15
10
5
0
1
10
10
5
1
10
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
15
Collector Current IC (mA)
VCE = 3 V
f = 2 GHz
30
25
20
15
10
5
10
VCE = 1 V
IC = 5 mA
35
30
MSG
25
20
MAG
MSG
|S21e|2
15
10
5
0
1
100
0.1
1
10
100
Collector Current IC (mA)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
40
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
20
40
35
VCE = 2 V
IC = 5 mA
35
30
MSG
25
20
MAG
MSG
|S21e|2
15
10
5
0
25
Collector Current IC (mA)
40
0
30
0
100
VCE = 2 V
f = 2 GHz
35
0.1
1
10
100
Frequency f (GHz)
VCE = 3 V
IC = 5 mA
35
30
MSG
25
20
MAG
MSG
|S21e|2
15
10
5
0
0.1
1
10
100
Frequency f (GHz)
Remark The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 4 of 9
NESG7030M04
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
VCE = 1 V
IC = 15 mA
MSG
30
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
40
MAG
MSG
25
20
|S21e|2
MAG
15
10
5
0
0.1
1
10
100
VCE = 2 V
IC = 15 mA
35
MSG
30
MAG
MSG
25
20
|S21e|2
15
10
5
0
0.1
1
10
100
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
40
35
MSG
MAG
VCE = 3 V
IC = 15 mA
MSG
30
25
20
|S21e|2
15
10
5
0
0.1
1
10
100
Frequency f (GHz)
Remark The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 5 of 9
NESG7030M04
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
MSG
MAG
25
20
15
|S21e|2
10
5
VCE = 1 V,
f = 2 GHz
0
1
10
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
30
20
15
10
|S21e|
5
VCE = 1 V,
f = 5.8 GHz
0
1
100
30
25
MSG
MAG
25
20
|S21e|2
15
10
5
VCE = 2 V,
f = 2 GHz
0
1
10
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
100
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
MAG
15
10
|S21e|2
5
VCE = 2 V,
f = 5.8 GHz
0
1
100
25
MAG
25
20
|S21e|2
10
5
VCE = 3 V,
f = 2 GHz
0
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
MSG
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
10
Collector Current IC (mA)
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
10
Collector Current IC (mA)
Collector Current IC (mA)
15
MAG
20
MSG
MAG
15
10
|S21e|2
5
VCE = 3 V,
f = 5.8 GHz
0
1
10
100
Collector Current IC (mA)
Remark The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 6 of 9
NESG7030M04
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
30
VCE = 2 V, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
20
15
10
1
NF
2
12
9
1
6
NF
3
5
0
1
0
0
100
10
Collector Current IC (mA)
Collector Current IC (mA)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
VCE = 2 V,
IC (set) = 10 mA,
f = 2 GHz
5
50
15
40
10
30
Pout
0
20
–5
–10
–35
0
1
10
IC
–30
–25
–20
–15
–10
0
Input Power Pin (dBm)
Output Power Pout (dBm)
10
100
Collector Current IC (mA)
Output Power Pout (dBm)
15
10
15
Ga
50
VCE = 2 V,
IC (set) = 10 mA,
f = 5.8 GHz
40
5
30
Pout
0
20
–5
10
Collector Current IC (mA)
25
Ga
2
18
3
Noise Figure NF (dB)
Noise Figure NF (dB)
VCE = 2 V, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
Associated Gain Ga (dB)
3
Associated Gain Ga (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
IC
–10
–20
–15
–10
–5
–0
5
0
Input Power Pin (dBm)
Remark The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 7 of 9
NESG7030M04
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import to
microwave circuit simulators without keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/download/parameter/
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 8 of 9
NESG7030M04
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04 PKG) (UNIT: mm)
2.0±0.1
2
1
1.25
3
4
1.30
0.65
4
0.30+0.1
–0.05
0.11+0.1
–0.05
1
0.30+0.1
–0.05
0.59±0.05
1.30
(1.05)
0.65
3
2
0.60
0.65
1.25
2.0±0.1
(Bottom View)
1.25±0.1
0.30+0.1
–0.05
0.40+0.1
–0.05
2.05±0.1
PIN CONNECTIONS
1.
2.
3.
4.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Emitter
Collector
Emitter
Base
Page 9 of 9
Revision History
Rev.
1.00
Date
Apr 18, 2012
NESG7030M04 Data Sheet
Description
Summary
Page
−
First edition issued
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