Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected]. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FGH40T65SQD 650 V, 40 A Field Stop Trench IGBT Features • • • • • • • • • General Description 175oC Maximum Junction Temperature: TJ = Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A 100% of the Parts tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant E C Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings FGH40T65SQD_F155 (1) Unit VCES Symbol Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage 20 V Transient Gate to Emitter Voltage 30 V IC Description Collector Current @ TC = 25 C 80 A Collector Current @ TC = 100oC 40 A ILM (2) Pulsed Collector Current ICM (3) Pulsed Collector Current IF IFM (3) PD o @ TC = 25oC 160 A 160 A Diode Forward Current @ TC = 25oC 40 A Diode Forward Current @ TC = 100oC 20 A Pulsed Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation @ TC = 100oC 160 A 238 W 119 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Notes: 1. Due to system integration constraints between Fairchild and ON semiconductor, as of November 1, 2017 any product part number with a underscore will be replaced with a dash. This is a notification. 2. VCC = 400 V, VGE = 15 V, IC = 160 A, RG = 22 , Inductive Load 3. Repetitive rating: Pulse width limited by max. junction temperature S e miconductor Compone nts Indus trie s , LLC, 2017 FGH40T65S QD • Re v. 1.0 www.fa irchilds e mi.com www.ons e mi.com 1 FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT June 2017 FGH40T65SQD_F155 Unit RJC (IGBT) Symbol Thermal Resistance, Junction to Case, Max. Parameter 0.63 oC/W RJC (Diode) Thermal Resistance, Junction to Case, Max. 1.71 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Qty per Tube FGH40T65SQD FGH40T65SQD_F155 TO-247 G03 - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES / TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1mA - 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA IC = 40 mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 2.6 4.5 6.4 V IC = 40 A, VGE = 15 V - 1.6 2.1 V IC = 40 A, VGE = 15 V, TC = 175oC - 1.92 - V - 2620 - pF VCE = 30 V, VGE = 0 V, f = 1 MHz - 60 - pF - 9 - pF 16.4 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics Td(on) Turn-On Delay Time - Tr Rise Time - 4.8 - ns Td(off) Turn-Off Delay Time - 86.4 - ns Tf Fall Time - 8.8 - ns Eon Turn-On Switching Loss - 138 - J VCC = 400 V, IC = 10 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC Eoff Turn-Off Switching Loss - 52 - J Ets Total Switching Loss - 190 - J Td(on) Turn-On Delay Time - 17.6 - ns Tr Rise Time - 9.6 - ns Td(off) Turn-Off Delay Time - 80 - ns Tf Fall Time - 8.8 - ns VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC Eon Turn-On Switching Loss - 329 - J Eoff Turn-Off Switching Loss - 84 - J Ets Total Switching Loss - 413 - J S e miconductor Compone nts Indus trie s , LLC, 2017 FGH40T65S QD • Re v. 1.0 www.fa irchilds e mi.com www.ons e mi.com 2 FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter (Continued) Test Conditions Min. Typ. Max. Unit 14.4 - ns Td(on) Turn-On Delay Time - Tr Rise Time - 6.4 - ns Td(off) Turn-Off Delay Time - 99.2 - ns Tf Fall Time - 8 - ns Eon Turn-On Switching Loss - 269 - J VCC = 400 V, IC = 10 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC Eoff Turn-Off Switching Loss - 132 - J Ets Total Switching Loss - 401 - J Td(on) Turn-On Delay Time - 16 - ns Tr Rise Time - 11.2 - ns Td(off) Turn-Off Delay Time - 91.2 - ns Tf Fall Time - 8 - ns Eon Turn-On Switching Loss - 581 - J Eoff Turn-Off Switching Loss - 237 - J VCC = 400 V, IC = 20 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC Ets Total Switching Loss - 818 - J Qg Total Gate Charge - 80 - nC Qge Gate to Emitter Charge - 15 - nC Qgc Gate to Collector Charge - 20 - nC VCE = 400 V, IC = 40 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy Trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions IF = 20 A IF = 20 A, dIF/dt = 200 A/s S e miconductor Compone nts Indus trie s , LLC, 2017 FGH40T65S QD • Re v. 1.0 Min. Typ. Max. TC = 25oC - 2.2 2.8 TC = 175oC - 1.94 - TC = 175oC - 50 - TC = 25oC - 31.8 - - 192 - TC = 25oC - 50.6 - TC = 175oC - 699 - TC = 175oC Unit V J ns nC www.fa irchilds e mi.com www.ons e mi.com 3 FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE S e miconductor Compone nts Indus trie s , LLC, 2017 FGH40T65S QD • Re v. 1.0 www.fa irchilds e mi.com www.ons e mi.com 4 FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics Figure 9. Turn-on Characteristics vs. Gate Resistance Figure 10. Turn-off Characteristics vs. Gate Resistance Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn-on Characteristics vs. Collector Current S e miconductor Compone nts Indus trie s , LLC, 2017 FGH40T65S QD • Re v. 1.0 www.fa irchilds e mi.com www.ons e mi.com 5 FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current S e miconductor Compone nts Indus trie s , LLC, 2017 FGH40T65S QD • Re v. 1.0 www.fa irchilds e mi.com www.ons e mi.com 6 FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge Figure 21.Transient Thermal Impedance of IGBT PDM t1 t2 Figure 22.Transient Thermal Impedance of Diode PDM t1 S e miconductor Compone nts Indus trie s , LLC, 2017 FGH40T65S QD • Re v. 1.0 t2 www.fa irchilds e mi.com www.ons e mi.com 7 FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT Mechanical Dimensions S e miconductor Compone nts Indus trie s , LLC, 2017 FGH40T65S QD • Re v. 1.0 www.fa irchilds e mi.com www.ons e mi.com 8 FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800-282-9855 Toll Free ON Semiconductor Website: www.onsemi.com USA/Canada. Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 421 33 790 2910 Japan Customer Focus Center For additional information, please contact your local Phone: 81-3-5817-1050 Sales Representative S e miconductor Compone nts Indus trie s , LLC, 2017 FGH40T65S QD • Re v. 1.0 www.fa irchilds e mi.com www.ons e mi.com 9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com