IRLH5030PbF HEXFET® Power MOSFET V DS 100 V R DS(on) max 9.9 mΩ Qg (typical) 44 nC R G (typical) 1.2 Ω h A (@VGS = 4.5V) ID 88 (@Tmb = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Features Low RDSon (≤9.0mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Base Part Number Package Type IRLH5030PBF PQFN 5mm x 6mm ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable part number IRLH5030TRPBF Absolute Maximum Ratings Parameter Max. VGS ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ±16 13 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 ID @ Tmb = 25°C ID @ Tmb = 100°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation IDM PD @TA = 25°C c PD @ Tmb = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range g 88 56 h h 400 3.6 156 0.029 -55 to + 150 Units V A W W/°C °C Notes through are on page 8 1 www.irf.com © 2013 International Rectifier May 29, 2013 IRLH5030PbF Static @ TJ = 25°C (unless otherwise specified) Output Charge Min. 100 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 160 ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.10 7.2 7.9 ––– -5.9 ––– ––– ––– ––– ––– 94 44 7.7 4.0 22 10.3 26 20 Conditions Max. Units ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 50A 9.0 mΩ VGS = 4.5V, ID = 50A 9.9 2.5 V VDS = VGS, ID = 150µA ––– mV/°C VDS = 100V, VGS = 0V 20 µA VDS = 100V, VGS = 0V, TJ = 125°C 250 V 100 GS = 16V nA -100 VGS = -16V ––– S VDS = 50V, ID = 50A ––– nC VGS = 10V, VDS = 50V, ID = 50A 66 ––– VDS = 50V ––– VGS = 4.5V nC ID = 50A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.2 21 72 41 41 5185 300 150 ––– ––– ––– ––– ––– ––– ––– ––– BVDSS ∆ΒVDSS/∆TJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ∆VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e e Ω ns pF VDD = 50V, VGS = 4.5V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 50V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR Diode Characteristics c Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ISM Min. Typ. Max. Units ––– ––– 100 ––– ––– 400 Units mJ A Max. 230 50 A c VSD trr Qrr ton Typ. ––– ––– d Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 50V di/dt = 500A/µs ––– ––– 1.0 V ––– 32 48 ns ––– 190 285 nC Time is dominated by parasitic Inductance e S e Thermal Resistance Parameter R θJC-mb R θJC (Top) R θJA R θJA (<10s) 2 Junction-to-Mounting Base Junction-to-Case f Junction-to-Ambient g Junction-to-Ambient g www.irf.com © 2013 International Rectifier Typ. Max. 0.5 0.8 ––– ––– 15 35 ––– 33 Units °C/W May 29, 2013 IRLH5030PbF 1000 1000 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 BOTTOM 100 2.7V 2.7V ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 10 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 1000 T J = 150°C 100 T J = 25°C 10 1 VDS = 25V ≤60µs PULSE WIDTH 0.1 ID = 50A VGS = 10V 2.0 1.5 1.0 0.5 1 2 3 4 5 6 7 8 9 10 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Crss 100 12.0 VDS= 80V VDS= 50V 10.0 VDS= 20V 8.0 6.0 4.0 2.0 0.0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 1 www.irf.com © 2013 International Rectifier 0 40 80 120 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage May 29, 2013 IRLH5030PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C 100 T J = 25°C 10 1 VGS = 0V 0.2 0.4 0.6 0.8 1.0 1000 1msec 10 10msec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1.2 0.1 1.4 DC 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 100 VGS(th) , Gate threshold Voltage (V) 2.5 80 ID, Drain Current (A) 100µsec 100 0.01 0.1 0.0 OPERATION IN THIS AREA LIMITED BY R DS(on) 60 40 20 2.0 1.5 ID = 150µA ID = 500µA 1.0 ID = 1.0mA ID = 1.0A 0.5 0 25 50 75 100 125 -75 -50 -25 150 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base 4 www.irf.com © 2013 International Rectifier May 29, 2013 25 1000 ID = 50A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRLH5030PbF 20 T J = 125°C 15 10 T J = 25°C 5 ID 5.5A 12A BOTTOM 50A 900 TOP 800 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2013 International Rectifier May 29, 2013 IRLH5030PbF D.U.T Driver Gate Drive + - - D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * • • • • D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer RG Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A I AS 0.01Ω tp Fig 16a. Unclamped Inductive Test Circuit V DS VGS RG Fig 16b. Unclamped Inductive Waveforms VDS RD 90% D.U.T. + -V DD 10% VGS V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 td(on) Fig 17a. Switching Time Test Circuit tr td(off) tf Fig 17b. Switching Time Waveforms Id Vds Vgs L DUT 0 s VCC 1K Vgs(th) Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 18b. Gate Charge Waveform May 29, 2013 IRLH5030PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier May 29, 2013 IRLH5030PbF PQFN 5x6 Outline "B" Tape and Reel Qualification information† Indus trial Qualification level Moisture Sensitivity Level (per JE DE C JE S D47F PQFN 5mm x 6mm RoHS compliant †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 50A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2013 International Rectifier May 29, 2013