ON NSVMMUN2112LT1G Digital transistors (brt) Datasheet

MUN2112, MMUN2112L,
MUN5112, DTA124EE,
DTA124EM3, NSBA124EF3
Digital Transistors (BRT)
R1 = 22 kW, R2 = 22 kW
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PNP Transistors with Monolithic Bias
Resistor Network
PIN CONNECTIONS
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
•
•
•
•
•
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Collector Current − Continuous
SC−59
CASE 318D
STYLE 1
XXX MG
G
SOT−23
CASE 318
STYLE 6
1
1
MAXIMUM RATINGS (TA = 25°C)
Rating
XX MG
G
XX MG
G
SC−70/SOT−323
CASE 419
STYLE 3
XX M
SC−75
CASE 463
STYLE 1
XX M
SOT−723
CASE 631AA
STYLE 1
XM 1
SOT−1123
CASE 524AA
STYLE 1
1
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
October, 2016 − Rev. 6
1
Publication Order Number:
DTA124E/D
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
Table 1. ORDERING INFORMATION
Part Marking
Package
Shipping†
6B
SC−59
(Pb−Free)
3000 / Tape & Reel
A6B
SOT−23
(Pb−Free)
3000 / Tape & Reel
MUN5112T1G, SMUN5112T1G
6B
SC−70/SOT−323
(Pb−Free)
3000 / Tape & Reel
DTA124EET1G
6B
SC−75
(Pb−Free)
3000 / Tape & Reel
DTA124EM3T5G
6B
SOT−723
(Pb−Free)
8000 / Tape & Reel
NSBA124EF3T5G
Y
SOT−1123
(Pb−Free)
8000 / Tape & Reel
Device
MUN2112T1G, NSVMUN2112T1G
MMUN2112LT1G, NSVMMUN2112LT1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
PD, POWER DISSIPATION (mW)
300
250
(1) SC−75 and SC−70/SOT−323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm2, 1 oz. copper trace
(5) SOT−723; Minimum Pad
200
150
(1) (2) (3) (4) (5)
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
230
338
1.8
2.7
mW
THERMAL CHARACTERISTICS (SC−59) (MUN2112)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
mW/°C
(Note 1)
(Note 2)
RqJA
540
370
°C/W
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
RqJL
264
287
°C/W
TJ, Tstg
−55 to +150
°C
246
400
2.0
3.2
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2112L)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
mW/°C
(Note 1)
(Note 2)
RqJA
508
311
°C/W
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
RqJL
174
208
°C/W
TJ, Tstg
−55 to +150
°C
202
310
1.6
2.5
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5112)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
mW/°C
(Note 1)
(Note 2)
RqJA
618
403
°C/W
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
RqJL
280
332
°C/W
TJ, Tstg
−55 to +150
°C
200
300
1.6
2.4
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTA124EE)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
(Note 1)
(Note 2)
Junction and Storage Temperature Range
mW/°C
RqJA
600
400
°C/W
TJ, Tstg
−55 to +150
°C
260
600
2.0
4.8
mW
THERMAL CHARACTERISTICS (SOT−723) (DTA124EM3)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
(Note 1)
(Note 2)
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
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3
mW/°C
RqJA
480
205
°C/W
TJ, Tstg
−55 to +150
°C
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
254
297
2.0
2.4
mW
THERMAL CHARACTERISTICS (SOT−1123) (NSBA124EF3)
Total Device Dissipation
TA = 25°C
(Note 3)
(Note 4)
Derate above 25°C
(Note 3)
(Note 4)
Thermal Resistance,
Junction to Ambient
PD
(Note 3)
(Note 4)
Thermal Resistance, Junction to Lead
(Note 3)
Junction and Storage Temperature Range
1.
2.
3.
4.
mW/°C
RqJA
493
421
°C/W
RqJL
193
°C/W
TJ, Tstg
−55 to +150
°C
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−
−
100
−
−
500
−
−
0.2
50
−
−
50
−
−
60
100
−
−
−
0.25
−
1.2
0.8
2.5
1.7
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)
(VCE = 0.3 V, IC = 5.0 mA)
Vi(on)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
Input Resistor
R1
15.4
22
28.6
Resistor Ratio
R1/R2
0.8
1.0
1.2
Vdc
Vdc
Vdc
Vdc
Vdc
kW
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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4
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
10
IC/IB = 10
TA = −25°C
25°C
1
75°C
0.1
0.01
40
20
60
IC, COLLECTOR CURRENT (mA)
0
80
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL CHARACTERISTICS
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3
1000
VCE = 10 V
TA = 75°C
100
10
10
1
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
lE = 0 A
TA = 25°C
7
6
5
4
3
2
1
0
0
10
10
TA = −25°C
1
0.1
0.01
VO = 5 V
0
1
Figure 4. Output Capacitance
100
25°C
75°C
0.001
50
20
30
40
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
10
8
2
3
4
5
6
7
Vin, INPUT VOLTAGE (V)
VO = 0.2 V
25°C
10
75°C
1
0
8
9
Figure 5. Output Current vs. Input Voltage
TA = −25°C
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
9
25°C
−25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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5
50
10
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
TYPICAL CHARACTERISTICS − NSBA124EF3
1000
25°C
25°C
hFE, DC CURRENT GAIN
IC/IB = 10
150°C
0.1
−55°C
0.01
0
10
20
30
40
100
−55°C
10
10
1
100
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
100
f = 10 kHz
IE = 0 A
TA = 25°C
5
4
3
2
1
10
20
30
40
−55°C
10
25°C
1
0.1
VO = 5 V
0.01
50
150°C
0
2
4
6
8
10
12
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
0
0.1
IC, COLLECTOR CURRENT (mA)
6
0
1
50
IC, COLLECTOR CURRENT (mA)
7
Cob, OUTPUT CAPACITANCE (pF)
150°C
VCE = 10 V
IC, COLLECTOR CURRENT (mA)
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
1
25°C
10
−55°C
150°C
1
0.1
VO = 0.2 V
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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6
50
14
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
E
2
b
e
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
8
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
9
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE G
−E−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
b 3 PL
0.20 (0.008)
e
DIM
A
A1
b
C
D
E
e
L
HE
−D−
1
M
D
HE
C
0.20 (0.008) E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
10
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.065
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.060 0.063 0.067
MIN
0.027
0.000
0.006
0.004
0.061
0.027
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
11
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
1
3
E
2
TOP VIEW
A
c
DIM
A
b
b1
c
D
E
e
HE
L
L2
HE
SIDE VIEW
3X
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
b
L2
0.08 X Y
e
2X
3X
b1
MILLIMETERS
MIN
MAX
0.34
0.40
0.15
0.28
0.10
0.20
0.07
0.17
0.75
0.85
0.55
0.65
0.35
0.40
0.95
1.05
0.185 REF
0.05
0.15
L
SOLDERING FOOTPRINT*
BOTTOM VIEW
1.20
3X
0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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