HRLO48N06H 60V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit BVDSS 60 V ID 21 A RDS(on), typ @10V 3.8 mΩ RDS(on), typ @4.5V 4.8 mΩ High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free Application Package & Internal Circuit Synchronous Rectification in SMPS SOP-8 Hard Switching and High Speed Circuit DC/DC in Telecoms and Industrial Absolute Maximum Ratings Symbol TJ=25℃ unless otherwise specified Parameter Value Units VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V TA = 25℃ 21 A TA = 100℃ 13 A 140 A L=1mH 160 mJ TA = 25℃ 3.1 W TA = 70℃ 2.0 W -55 to +150 ℃ ID Drain Current IDM Pulsed Drain Current EAS Single Pulsed Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Thermal Resistance Characteristics Symbol RθJL RθJA Parameter Typ. Max. Units Junction-to-Lead -- 23 ℃/W Junction-to-Ambient (t≤10s) -- 40 ℃/W Junction-to-Ambient (steady state) -- 75 ℃/W ◎ SEMIHOW REV.A0,December 2016 HRLO48N06H Dec 2016 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 1.0 -- 3.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 20 A -- 3.8 4.8 mΩ VGS = 4.5 V, ID = 20 A -- 4.8 6.3 mΩ Forward Transconductance VDS = 5 V, ID = 20 A -- 58 -- S VGS = 0 V, ID = 250 ㎂ 60 -- -- V VDS = 60 V, VGS = 0 V -- -- 1 ㎂ VDS = 60 V, TJ = 100℃ -- -- 100 ㎂ VGS = ±20 V, VDS = 0 V -- -- ±100 ㎁ -- 3250 -- ㎊ -- 1200 -- ㎊ -- 45 -- ㎊ -- 1.6 -- Ω -- 12 -- ㎱ -- 10 -- ㎱ -- 55 -- ㎱ Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 30 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time VDS = 30 V, ID = 20 A, RG = 10 Ω tf Turn-Off Fall Time -- 15 -- ㎱ Qg (10V) Total Gate Charge -- 49 -- nC Qg (4.5V) Total Gate Charge -- 24 -- nC -- 8 -- nC -- 9 -- nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 30 V, ID = 20 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 21 ISM Pulsed Source-Drain Diode Forward Current -- -- 140 VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V -- 0.9 1.2 V trr Reverse Recovery Time -- 50 -- ㎱ Qrr Reverse Recovery Charge IS = 20 A, VR = 30 V diF/dt = 300 A/μs -- 120 -- nC A ◎ SEMIHOW REV.A0,December 2016 HRLO48N06H Electrical Characteristics TJ=25 °C HRLO48N06H Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,December 2016 HRLO48N06H Typical Characteristics (continued) Figure 7. On-Resistance Variation vs Gate-Source Voltage Figure 8. On-Resistance Variation vs Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,December 2016 HRLO48N06H Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L 1 EAS = ---- LL IAS2 2 VDS VDD ID BVDSS IAS RG ID (t) 10V DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,December 2016 HRLO48N06H Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,December 2016 HRLO48N06H Package Dimension SOP-8 ◎ SEMIHOW REV.A0,December 2016