MGA-632P8 Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-632P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA) with active bias. The LNA has low noise with excellent input return loss and high linearity achieved through the use of Avago Technologies’ proprietary 0.5um GaAs Enhancement-mode pHEMT process. The LNA has an extra feature that allows a designer to adjust supply current and gain externally. Due to the high isolation between the input and output, gain can be adjusted independently through a resistor in series with a blocking capacitor from the output pin to FB1 pin, without affecting the noise figure. It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Thin Small Leadless Package (TSLP) package. The compact footprint and low profile coupled with low noise, high gain, excellent input return loss and high linearity make the MGA-632P8 an ideal choice as an LNA for cellular infrastructure for GSM, CDMA, W-CDMA and TD-SCDMA applications. • • • • • • • • • Low noise figure Good input return loss High linearity performance High Isolation Externally adjustable supply current, 40-80mA Externally adjustable gain, 15-20dB GaAs E-pHEMT Technology[1] Low cost small package size: 2.0x2.0x0.75 mm3 Excellent uniformity in product specifications Specifications It is designed for optimum use between 1.4GHz to 3.8GHz. For optimum performance at lower frequency from 400MHz to 1.5GHz, the MGA-631P8 is recommended. Both MGA-631P8 and MGA-632P8 share the same package and pinout. 1.95GHz; 4V, 57mA (typ) • 17.6 dB Gain • 0.62 dB Noise Figure • -22.7 dB S11 • -40.5 dB S12 • 33.9 dBm Output IP3 • 19.2 dBm Output Power at 1dB gain compression Pin Configuration and Package Marking Applications 2.0 x 2.0 x 0.75 mm3 8-lead TSLP • Low noise amplifier for cellular infrastructure for GSM, CDMA, W-CDMA and TD-SCDMA. • Other ultra low noise applications. Note: 1. Enhancement mode technology employs positive Vbias, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. Top View Bottom View Note: Package marking provides orientation and identification “G2” is Device Code “X” is month code Note: Pin 1 : not used Pin 2 : RFin Pin 3 : RF ground Pin 4 : Vbias Pin 5 : FB1 Pin 6 : not used Pin 7 : RFout Pin 8 : Gnd Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 50 V ESD Human Body Model = 200 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. MGA-632P8 Absolute Maximum Rating [1] Symbol Parameter Units Absolute Max. Vd Device Supply Voltage V 5.5 Pin,max (ON) CW RF Input Power (Vd = 4.0V, Vbias=4.0V) dBm 20 Pin,max(OFF) CW RF Input Power (Vd=4.0V, Vbias=0V) dBm 25 Pdiss Total Power Dissipation [2] W 0.55 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance [3] (Vd = 4.0V, Vbias=4.0V), θjc = 47 °C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Board temperature TB is 25 °C. Derate 21.2mW/ °C for TB>124 °C. 3. Thermal resistance measured using Infra-Red Microscopy Technique. Product Consistency Distribution Charts [4] 240 Process Capability for Gain 160 200 120 80 Nominal = 0.62 USL = 1.0 CPK = 5.06 Std Dev = 0.025 120 80 40 40 0 Process Capability for NF 160 Frequency Frequency CPK Lower = 2.78 CPK Upper = 2.47 Std Dev = 0.19 LSL = 16.0 Nominal = 17.65 USL = 19.0 200 240 16 16.5 17 17.5 18 Gain (dB) 18.5 0 19 0.3 0.4 0.5 0.6 0.7 NF (dB) 0.8 0.9 1 Figure 2. NF distribution at 57mA Figure 1. Gain distribution at 57mA Process Capability for Vbias LSL = 44 Nominal = 57 USL = 70 Std Dev = 0.546 CPK = 1.553 Nominal = 33.9 LSL = 31.3 500 400 Count Frequency 30000 CPK Lower = 2.60 CPK Upper = 2.62 Std Dev = 1.22 20000 300 200 10000 100 45 50 55 60 Id (mA) Figure 3. Id distribution at 57mA 65 70 31 32 33 34 OIP3U 35 36 37 Figure4. OIP3U distribution at 57mA. Note: 4. Distribution data sample size is 500 samples taken from 3 different wafer lots. Future wafer allocated to this product may have nominal values anywhere between the upper and lower limits. Circuit losses have been de-embedded from actual measurements. Electrical Specifications [1, 2] TA = 25 °C, Vd =4V @ 57mA, R1=300ohm unless otherwise specified. Symbol Parameter and Test Condition Units Min. Typ. Max. Id Operational Current Gain Freq=1.75 GHz Freq=1.85 GHz Freq=1.95 GHz Vbias=4.0V mA 44 57 70 Associated Gain dB 16.0 18.3 17.9 17.6 OIP3 19.0 Freq=1.75 GHz Freq=1.85 GHz Freq=1.95 GHz Output Third Order Intercept Point (2-tone @ FRF +/- 2.5MHz, Pin = -20dBm) dBm 31.3 34.7 34.3 33.9 Freq=1.75 GHz Freq=1.85 GHz Freq=1.95 GHz Noise Figure in 50Ω system dB OP1dB Freq=1.75 GHz Freq=1.85 GHz Freq=1.95 GHz Output Power at 1dB Gain Compression dBm 18.8 19.2 19.2 IRL Freq=1.75 GHz Freq=1.85 GHz Freq=1.95 GHz Input Return Loss dB -32.1 -27.6 -22.7 ORL Freq=1.75 GHz Freq=1.85 GHz Freq=1.95 GHz Output Return Loss dB -12.2 -13.6 -13.9 S12 Freq=1.75 GHz Freq=1.85 GHz Freq=1.95 GHz Reverse Isolation dB -40.2 -40.4 -40.5 NF50Ω 0.59 0.59 0.62 1.0 Notes: 1. Measurements obtained using demo board described in Figure 31 and Table 1, List 1. Input and output board losses have been de-embedded. 2. Guaranteed specifications are 100% tested in production test circuit. Typical Electrical Specifications at 2.6GHz [1] TA = 25 °C, Vd =4V @ 57mA, R1=300ohm unless otherwise specified. Symbol Parameter and Test Condition Units Typ. Gain Freq=2.6GHz OIP3 Freq=2.6GHz Associated Gain dB 15.3 Output Third Order Intercept Point (2-tone @ FRF +/- 2.5MHz, Pin = -20dBm) dBm 33.4 NF50Ω OP1dB Freq=2.6GHz Noise Figure in 50Ω system dB 0.97 Freq=2.6GHz Output Power at 1dB Gain Compression dBm 18.5 IRL Freq=2.6GHz Input Return Loss dB -33.4 ORL Freq=2.6GHz Output Return Loss dB -8.7 S12 Freq=2.6GHz Reverse Isolation dB -39.8 Notes: 1. Measurements obtained using demo board described in Figure 31 and Table 1, List 3. Input and output board losses have been de-embedded. Typical Electrical Specifications at 3.5GHz [1] TA = 25 °C, Vd =4V @ 57mA, R1=300ohm unless otherwise specified. Symbol Parameter and Test Condition Units Typ. Gain Freq=3.5GHz OIP3 Freq=3.5GHz Associated Gain dB 12.0 Output Third Order Intercept Point (2-tone @ FRF +/- 2.5MHz, Pin = -20dBm) dBm 32.0 NF50Ω OP1dB Freq=3.5GHz Noise Figure in 50Ω system dB 1.25 Freq=3.5GHz Output Power at 1dB Gain Compression dBm 18.4 IRL Freq=3.5GHz Input Return Loss dB -14.9 ORL Freq=3.5GHz Output Return Loss dB -11.5 S12 Freq=3.5GHz Reverse Isolation dB -40.5 Notes: 1. Measurements obtained using demo board described in Figure 31 and Table 1, List 4. Input and output board losses have been de-embedded. MGA-632P8 Typical Performance [1] TA = +25 °C, Vd = 4V, Id = 57mA, R1=300ohm unless stated otherwise. 21 1 40 19 0.9 35 0.8 30 13 11 9 40 35 0.8 30 0.7 10 8 6 0.6 OIP3 (dBm) NF (dB) 12 0.5 0.4 0.3 4 10 20 30 40 50 60 Id (mA) 70 80 3V Vd 4V Vd 5V Vd 0.1 0 10 90 Figure 8. Gain Vs Id and Vd 20 15 20 30 40 50 60 Id (mA) 70 80 0 10 90 0.9 18 0.8 60 17 0.7 16 0.6 15 0.5 Gain (dB) 14 13 20 1.0 2.0 3.0 4.0 5.0 6.0 Vd (V) Figure 11. Id Vs Vd and Temperature 7.0 10 1.70 40 50 60 Id (mA) 70 80 90 0.4 0.2 -40°C 25°C 85°C 11 8.0 30 0.3 12 -40°C 25°C 85°C 10 0 0.0 NF (dB) 19 70 30 20 Figure 10. OIP3 Vs Id and Vd 80 40 3V Vd 4V Vd 5V Vd 5 Figure 9. NF Vs Id and Vd 50 1.75 1.80 1.85 1.90 1.95 Frequency (GHz) 2.00 2.05 Figure 12. Gain Vs Frequency and Temperature Notes: 1. Measurements obtained using demo board described in Figure 28 and Table 1, List 1. 25 10 0.2 3V Vd 4V Vd 5V Vd 2 20mA 40mA 60mA 80mA Figure 7. OIP3 Vs Frequency and Id 1 14 15 0 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 Frequency (GHz) 0.9 16 20 5 Figure 6. NF Vs Frequency and Id 18 25 10 20mA 40mA 60mA 80mA 0 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 Frequency (GHz) 20 Gain (dB) 0.4 0.1 Figure 5. Gain Vs Frequency and Id Id (mA) 0.5 0.2 5 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 Frequency (GHz) 0 0.6 0.3 20mA 40mA 60mA 80mA 7 OIP3 (dBm) 0.7 15 NF (dB) Gain (dB) 17 -40°C 25°C 85°C 0.1 2.10 0.0 1.70 1.75 1.80 1.85 1.90 1.95 2.00 Frequency (GHz) 2.05 2.10 Figure 13. NF Vs Frequency and Temperature MGA-632P8 Typical Performance [1] TA = +25 °C, Vd = 4V, Id = 57mA, R1=300ohm unless stated otherwise. 40 20 0.9 18 35 0.8 16 0.7 14 25 20 10 1.70 1.75 1.80 1.85 1.90 1.95 Frequency (GHz) 2.00 10 8 -40°C 25°C 85°C 2 Figure 14. OIP3 vs Frequency and Temperature 0 10 20 30 40 50 60 Id (mA) 70 80 0.0 90 25 20 40 50 60 Id (mA) 70 80 90 0.8 0.7 20 15 15 0.6 NF (dB) 25 Gain (dB) 10 0.5 0.4 0.3 10 5 -40°C -30°C 25°C 85°C 5 10 20 30 40 50 60 Id (mA) 70 80 0 1.70 90 Figure 17. OIP3 vs Id and Temperature 1.75 1.80 1.85 1.90 1.95 2.00 Frequency (GHz) 2.05 0 1.70 2.10 -10 Input Return Loss 25 20 R1=56ohms R1=300ohms R1=10Kohms 15 1.75 1.80 1.85 1.90 1.95 2.00 Frequency (GHz) Figure 20. OIP3 Vs Frequency and R1 2.05 2.10 -15 -20 -25 1.85 1.90 1.95 Frequency (GHz) 2.00 2.05 2.10 R1=56ohms R1=300ohms R1=10Kohms -5 -10 -15 -20 -30 -35 1.70 1.80 0 R1=56ohms R1=300ohms R1=10Kohms -5 30 1.75 Figure 19. NF Vs Frequency and R1 0 35 R1=56ohms R1=300ohms R1=10Kohms 0.1 Figure 17. Gain Vs Frequency and R1 40 10 1.70 0.2 R1=56ohms R1=300ohms R1=10Kohms Output Return Loss (dB) OIP3 (dBm) 30 1 30 OIP3 (dBm) 20 0.9 35 1.75 1.80 1.85 1.90 1.95 Frequency (GHz) 2.00 2.05 2.10 Figure 21. Input Return Loss Vs Frequency and R1 Notes: 1. Measurements obtained using demo board described in Figure 28 and Table 1, List 1. 10 Figure 16. NF Vs Id and Temperature 40 0 -40°C 25°C 85°C 0.1 Figure 15. Gain vs Id and Temperature 45 0.4 0.2 4 2.05 2.10 0.5 0.3 6 -40°C -30°C 25°C 85°C 15 0.6 12 NF (dB) Gain (dB) OIP3 (dBm) 30 -25 1.70 1.75 1.80 1.85 1.90 1.95 Frequency (GHz) 2.00 2.05 2.10 Figure 22. Output Return Loss Vs Frequency and R1 MGA-632P8 Typical Performance for 1.5 GHz Matching [1] TA = +25 °C, Vd = 4V, Id = 57mA 0.8 36 17 0.7 34 16 0.6 32 15 0.5 14 0.4 13 0.3 26 12 0.2 24 11 0.1 22 NF 10 NF (dB) Gain (dB) 18 1.2 1.3 1.4 1.5 1.6 Frequency (GHz) Figure 23. Gain and NF Vs Frequency Input Return Loss Output Return Loss -10 OIP3 30 28 20 1.2 0 1.8 1.7 0 1.3 1.4 1.5 1.6 Frequency (GHz) 1.7 -10 -20 -20 -30 -30 -40 -40 -50 -50 -60 1.0 1.8 0 Output Return Loss (dB) 38 Input Return Loss (dB) 40 0.9 Gain 19 OIP3 (dBm) 1 20 1.1 1.2 1.3 1.4 1.5 1.6 1.7 Frequency (GHz) 1.8 1.9 -60 2.0 Figure 25. Input and output Return Loss vs Frequency Figure 24. OIP3 vs Frequency MGA-632P8 Typical Performance for 2.6 GHz Matching [2] 1.2 17 16 1.1 1 15 0.9 34 0.8 0.7 32 NF 12 0.6 11 10 0.5 0.4 9 0.3 8 7 0.2 0.1 6 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) -7 OIP3 30 28 26 24 20 2.2 Figure 26. Gain and NF vs Frequency 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) 2.8 Figure 27. OIP3 vs Frequency Output Return Loss -4 -21 -6 -28 -8 -35 -10 -42 2.0 2.9 -2 Input Return Loss -14 22 0 2.9 2.8 0 Input Return Loss (dB) Gain 0 36 OIP3 (dBm) 14 13 38 Output Return Loss (dB) 18 NF (dB) Gain (dB) TA = +25 °C, Vd = 4V, Id = 57mA 2.2 2.4 2.6 2.8 Frequency (GHz) 3.0 -12 3.2 Figure 28. Input and output Return Loss vs Frequency MGA-632P8 Typical Performance for 3.5GHz Matching [3] 1.8 9.0 OIP3 (dBm) 0.8 NF (dB) Gain (dB) 1.0 10.0 28 26 0.6 8.0 GAIN (dB) 7.0 NF (dB) 3.3 3.4 3.5 3.6 Frequency (GHz) Figure 29. Gain and NF vs Frequency 3.7 0.4 0.2 0.0 3.8 Ouput Return Loss -13.5 30 1.2 11.0 0 Input Return Loss -14.0 -10 -14.5 -15 -15.0 -20 -15.5 -25 24 22 20 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 -16.0 2.7 2.9 Figure 30. OIP3 vs Frequency 3.1 3.3 3.5 3.7 3.9 4.1 Frequency (GHz) Frequency (GHz) Figure 31. Input and Output Return Loss vs Frequency Notes: 1. For Figure 22, 23 and 24, measurements obtained using demo board described in Figure 32 and Table 1, List 2. 2. For Figure 25, 26 and 27, measurements obtained using demo board described in Figure 32 and Table 1, List 3. 3. For figure 28, 29 and 30, measurements obtained using demo board described in Figure 32 and Table 1, List4. -5 32 1.4 12.0 -13.0 OIP3 34 1.6 13.0 6.0 3.2 36 -30 4.3 Ouput Return Loss (dB) 2.0 14.0 Input Return Loss (dB) 15.0 Demo Board Layout Figure 32. Demo Board Layout Diagram - Recommended PCB material is 10 mils Rogers RO4350. - Suggested component values may vary according to layout and PCB material. Demo Board Schematic for Table 1 Vd C7 C6 Rbias L2 RFout RFin RFin C1 C4 C5 RFout R1 L1 C2 RFgnd Bias Vbias C3 FB1 Figure 33. Demo Board Schematic. This demo board is used for the measurement. Table 1 List 1 – Demo Board Component values for Demo board Schematic of Fig. 29. These component values are used when measuring electrical specifications and plots of Fig. 4 to Fig. 21. List 2 – Demo Board Component values for Demo board Schematic of Fig. 29. These component values are used when measuring plots of Fig. 22 to Fig. 24. List 3 – Demo Board Component values for Demo board Schematic of Fig. 29. These component values are used when measuring plots of Fig. 25 to Fig. 27. List 4 - Demo Board Component Values for Demo board Schematic of Fig 29. These component Values are used when measuring plots of Fig. 28 to Fig. 30. Part Size List 1 (1.95 GHz Matching) List 2 (1.5 GHz Matching) L1 0402 3.6nH (Coilcraft 0402CS-3N6XJBW) 3.9nH (Coilcraft 0402CS-3N9XJBW) L2 0402 2.2nH (Coilcraft 0402CS-2N2XJBW) 3.3nH (Coilcraft 0402CS-3N3XJBW) C1 0402 2.2pF (Rohm MCH155A022JK) 2.7pF (Rohm MCH155027JK) C2 0402 2.4pF (Rohm MCH155A024CK) 3.0pF (Rohm MCH155A030CK) C3 0402 1.2pF (Rohm MCH155A1R2CK) 1.2pF (Rohm MCH155A1R2CK) C4 0402 100pF (Rohm MCH155A101JK) 100pF (Rohm MCH155A101JK) C5 0402 0.1uF (Kyocera CM05X5R104K10AH) 0.1uF (Kyocera CM05X5R104K10AH) C6 0402 9pF (Rohm MCH155A090DK) 9pF (Rohm MCH155A090DK) C7 0402 0.1uF (Kyocera CM05X5R104K10AH) 0.1uF (Kyocera CM05X5R104K10AH) R1 0402 300W (Rohm MCR01MZSJ301) 91W (Rohm MCR01MZSJ910) Rias 0402 620Ω (Rohm MCR01MZSJ621) 620Ω (Rohm MCR01MZSJ621) Part Size List 3 (2.6GHz Matching) List 4 (3.5GHz Matching) L1 0402 1.5nH (Toko LL1005-FHL1N5S) 3.9nH (Toko LL005-FHL3N9S) L2 0402 1.0nH (Toko LL1005-FHL1N0S) 1.2nH (Toko LL005-FHL1N2S) C1 0402 2.0pF (Rohm MCH155A2R0CK) 4.3pF (Murata MCH155A4R3JK) C2 0402 100pF (Rohm MCH155A101JK) 4.3pF (Murata MCH155A4R3JK) C3 0402 5.6pF (Rohm MCH155A5R6CK) 1.2pF (Murata GRM1555C1H1R2BZ01D) C4 0402 100pF (Rohm MCH155A101JK) 100pF (Murata GRM1555C1H101JD01E) C5 0402 0.1uF (Kyocera CM05X5R104K10AH) 0.1uF (Kyocera CM05X5R04K10AH) C6 0402 0.5pF (Rohm MCH155A0R5CK) 4.3pF (Murata MCH155A4R3JK) C7 0402 0.1uF (Kyocera CM05X5R104K10AH) 0.1uF (Kyocera CM05X5R04K0AH) R1 0402 1.5kW (Rohm MCR01MZSJ152) 150Ω (Rohm MCR01MZSJ151) Rias 0402 620Ω (Rohm MCR01MZSJ621) 620Ω (Rohm MCR01MZSJ621) Load pull test set up Vbias C5 Dielectric: RO4350 Thickness: 0.254mm Vd C6 Rbias Gnd 1.44mm C1 Input Output L1 R1 0.40mm C3 Bias C4 Vbias Bias Tee 3.30mm RFgnd FB1 C7 Figure 34. Test setup for load pull data The input port is matched for good NF and IRL. Because of the high reverse isolation, any change on the output port has a minimum change on the input port. Therefore, only the output port is tuned for the maximum OIP3. R1 is varied for different level of gain Test condition for the OIP3: -20dBm at 1.95GHz ±5MHz. 10 Load pull 1.41mm Measured results Test condition: 4V/57mA, 1.95GHz Refer to Table 1, List 1 for SMT component value and description, unless otherwise stated. Resistor, R1 Γ OIP3 (max) 160ohm 0.48 < 91.4° +39.3dBm 56ohm 0.61 <134.2° +38.1dBm 10kohm 0.40 < 150° +38.5dBm Figure 35. Load pull contour plot for R1=160ohm 11 Figure 36. Load pull contour plot for R1=56ohm Figure 37. Load pull contour plot for R1=10kohm 12 MGA-632P8 Scattering Parameter and Noise Parameter Test Setup Figure 38. Test Setup for S & Noise Parameters data, C3=1.2pF (Rohm MCH155A1R2CK) Typical Noise Parameter, Vd=4V, Id=57mA, applicable to any R1 due to high reverse isolation Freq FMIN GAMMA OPT (GHz) (dB) Mag Ang 0.9 0.41 0.31 78 0.10 1.9 0.55 0.27 92 0.06 2.0 0.54 0.27 93 0.07 2.4 0.66 0.22 98 0.07 3.0 0.77 0.28 101 0.08 Rn/50 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on PCB. The PCB material is 10 mils Roger RO4350. Figure 34 shows the input and output reference plane. 13 MGA632P8 Typical Scattering Parameters, Vd=4V, Id=57mA, R1=56ohm Freq S11 S21 S12 S22 (GHz) Mag Ang Mag Ang Mag Ang Mag Ang 0.1 0.96 -10.5 25.83 165.6 0.006 89.2 0.68 -13.4 0.5 0.72 -39.5 17.06 132.7 0.006 60.2 0.53 -47.7 0.9 0.53 -51.9 11.58 118.1 0.009 64.7 0.49 -71.7 1.0 0.50 -53.5 10.34 115.9 0.009 63.4 0.49 -77.6 1.5 0.40 -57.1 6.80 110.6 0.011 69.6 0.47 -101.7 1.9 0.36 -57.2 5.11 112.8 0.012 68.8 0.47 -118.0 2.0 0.36 -57.5 4.74 112.5 0.012 73.8 0.46 -120.3 2.5 0.35 -58.3 4.00 117.2 0.011 72.9 0.46 -135.6 3.0 0.34 -59.7 3.23 122.9 0.010 82.5 0.45 -145.9 3.5 0.34 -61.5 2.99 128.8 0.008 83.3 0.47 -154.8 4.0 0.33 -63.8 2.71 133.3 0.007 93.7 0.48 -163.6 5.0 0.30 -71.9 2.61 136.0 0.001 -174.8 0.53 172.7 6.0 0.26 -86.6 2.48 136.1 0.008 -59.8 0.54 142.1 7.0 0.26 -111.8 2.52 134.6 0.026 -50.6 0.48 97.6 8.0 0.34 -156.0 2.96 115.6 0.071 -59.7 0.45 9.7 MGA632P8 Typical Scattering Parameters, Vd=4V, Id=57mA, R1=91ohm Freq S11 S21 S12 S22 (GHz) Mag Ang Mag Ang Mag Ang Mag Ang 0.1 0.97 -10.0 25.88 165.6 0.003 44.1 0.68 -12.0 0.5 0.73 -39.0 17.05 133.4 0.006 66.2 0.51 -46.3 0.9 0.53 -51.2 11.64 119.9 0.008 58.0 0.47 -67.8 1.0 0.50 -52.8 10.45 117.8 0.009 57.1 0.46 -73.5 1.5 0.41 -56.3 7.08 113.1 0.010 63.8 0.46 -94.5 1.9 0.37 -57.7 5.43 114.3 0.011 67.7 0.48 -109.1 2.0 0.37 -58.0 5.11 113.4 0.010 71.1 0.48 -111.5 2.5 0.35 -59.6 4.35 116.7 0.009 78.2 0.48 -126.8 3.0 0.35 -60.8 3.46 120.0 0.008 80.5 0.50 -138.5 3.5 0.34 -62.6 3.14 124.5 0.007 98.7 0.52 -150.4 4.0 0.33 -64.5 2.74 128.8 0.006 112.6 0.54 -162.2 5.0 0.30 -71.8 2.55 133.4 0.001 -179.0 0.56 171.7 6.0 0.26 -86.1 2.43 134.9 0.008 -62.6 0.54 141.3 7.0 0.26 -111.9 2.49 133.9 0.026 -48.8 0.48 97.9 8.0 0.34 -156.2 2.94 114.6 0.070 -59.2 0.44 9.7 Notes: 1. S-parameters are measured on PCB. The PCB material is 10 mils Roger RO4350. Figure 34 shows the input and output reference plane. 14 MGA632P8 Typical Scattering Parameters, Vd=4V, Id=57mA, R1=300ohm Freq S11 S21 S12 S22 (GHz) Mag Ang Mag Ang Mag Ang Mag Ang 0.1 0.96 -10.6 25.70 165.8 0.008 151.3 0.68 -14.0 0.5 0.73 -37.7 17.33 136.8 0.005 57.6 0.49 -36.0 1.0 0.52 -51.7 11.36 121.3 0.006 52.9 0.51 -57.7 1.5 0.42 -57.6 8.01 114.2 0.006 67.2 0.53 -79.5 1.9 0.38 -59.6 6.17 113.2 0.007 78.1 0.57 -95.3 2.0 0.38 -60.3 5.80 111.5 0.007 77.2 0.57 -99.3 2.5 0.36 -62.3 4.93 113.3 0.006 97.2 0.59 -117.3 3.0 0.34 -63.0 3.80 114.4 0.007 106.7 0.61 -132.1 3.5 0.33 -64.1 3.33 118.7 0.006 123.0 0.62 -146.4 4.0 0.32 -65.2 2.81 122.6 0.006 135.6 0.63 -159.8 5.0 0.29 -71.6 2.54 127.6 0.004 -166.1 0.62 172.5 6.0 0.26 -86.0 2.39 130.8 0.008 -69.5 0.57 142.0 7.0 0.26 -113.2 2.45 130.3 0.026 -50.4 0.50 99.7 8.0 0.34 -158.3 2.90 111.0 0.068 -58.2 0.41 13.1 MGA632P8 Typical Scattering Parameters, Vd=4V, Id=57mA, R1=1.5kohm Freq S11 S21 S12 S22 (GHz) Mag Ang Mag Ang Mag Ang Mag 0.1 0.96 -10.0 25.56 167.3 0.005 69.2 0.66 -8.6 0.5 0.75 -36.8 18.56 137.9 0.003 59.6 0.58 -29.4 0.9 0.57 -50.3 13.44 123.6 0.004 64.3 0.60 -48.4 1.0 0.54 -52.4 12.15 120.6 0.004 58.9 0.60 -54.5 1.5 0.43 -58.5 8.48 112.8 0.006 82.2 0.62 -77.1 2.0 0.38 -61.2 6.08 109.6 0.007 98.5 0.64 -97.4 2.5 0.35 -62.9 5.15 111.5 0.006 103.4 0.66 -115.6 3.0 0.34 -63.6 3.92 112.3 0.006 121.8 0.65 -130.5 3.5 0.33 -64.5 3.43 116.8 0.007 130.7 0.66 -145.0 4.0 0.32 -65.6 2.87 120.9 0.006 147.1 0.66 -158.5 5.0 0.28 -71.9 2.57 126.4 0.004 -149.2 0.64 173.5 6.0 0.26 -85.9 2.42 129.4 0.009 -61.3 0.59 143.3 7.0 0.26 -111.4 2.51 129.6 0.026 -50.4 0.50 101.3 8.0 0.34 -159.0 3.01 109.6 0.069 -57.4 0.40 12.4 Notes: 1. S-parameters are measured on PCB. The PCB material is 10 mils Roger RO4350. Figure 34 shows the input and output reference plane. 15 Ang MGA632P8 Typical Scattering Parameters, Vd=4V, Id=57mA, R1=10kohm Freq S11 S21 S12 S22 (GHz) Mag Ang Mag Ang Mag Ang Mag Ang 0.1 0.96 -9.9 26.06 168.1 0.005 -41.8 0.72 -5.1 0.5 0.75 -36.8 18.98 137.5 0.003 67.3 0.62 -29.7 0.9 0.57 -50.7 13.68 123.2 0.004 67.8 0.61 -48.3 1.0 0.54 -52.8 12.37 120.0 0.004 72.2 0.61 -54.6 1.5 0.43 -59.0 8.60 112.2 0.006 86.7 0.63 -77.1 1.9 0.39 -61.6 6.54 110.8 0.006 91.9 0.66 -92.7 2.0 0.38 -61.8 6.12 108.8 0.006 95.4 0.66 -97.1 2.5 0.36 -63.7 5.20 111.0 0.006 105.8 0.66 -115.3 3.0 0.34 -64.0 3.92 111.8 0.006 118.7 0.66 -130.1 3.5 0.33 -65.2 3.45 116.0 0.006 137.8 0.67 -144.6 4.0 0.32 -65.8 2.90 120.3 0.005 143.2 0.67 -158.1 5.0 0.29 -71.9 2.61 125.8 0.003 -148.6 0.65 173.9 6.0 0.26 -86.0 2.44 129.1 0.008 -71.3 0.58 144.2 7.0 0.26 -113.0 2.53 128.8 0.026 -50.6 0.49 101.8 8.0 0.35 -159.1 3.07 109.0 0.067 -58.6 0.39 11.5 Notes: 1. S-parameters are measured on PCB. The PCB material is 10 mils Roger RO4350. Figure 34 shows the input and output reference plane. 16 Ordering Information Part Number No. of Devices Container MGA-632P8-TR1G 3000 7” Reel MGA-632P8-TR2G 10000 13” Reel MGA-632P8-BLKG 100 antistatic bag TSLP2X2 Package Dimension PCB Land Pattern and Stencil Design 2.72 (107.09) 2.80 (110.24) 0.70 (27.56) 0.63 (24.80) 0.25 (9.84) 0.22 (8.86) 0.25 (9.84) PIN 1 0.32 (12.79) 0.50 (19.68) 0.50 (19.68) ∅ 0.20 (7.87) 1.54 (60.61) 1.60 (62.99) Solder mask RF transmission line PIN 1 + 0.80 (31.50) 0.25 (9.74) 0.28 (10.83) 0.60 (23.62) 0.72 (28.35) 0.63 (24.80) 0.15 (5.91) 0.55 (21.65) PCB Land Pattern (top view) All dimensions are in millimeters (mils) Note: 1 mil = 1/1000 inch 17 Stencil Layout (top view) Device Orientation 4 mm REEL 8 mm G2x G2x G2x CARRIER TAPE USER FEED DIRECTION COVER TAPE Tape Dimensions D P0 P P2 E F W + + D1 Tt t1 K0 A0 10° Max 10° Max DESCRIPTION B0 SYMBOL SIZE (mm) SIZE (inches) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.30 ± 0.05 2.30 ± 0.05 1.00 ± 0.05 4.00 ± 0.10 1.00 + 0.25 0.091 ± 0.004 0.091 ± 0.004 0.039 ± 0.002 0.157 ± 0.004 0.039 + 0.002 PERFORATION DIAMETER PITCH POSITION D P0 E 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.060 ± 0.004 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH W THICKNESS t1 8.00 + 0.30 8.00 ± 0.10 0.254 ± 0.02 0.315 ± 0.012 0.315 ± 0.004 0.010 ± 0.0008 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ± 0.004 0.0025 ± 0.0004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 P2 2.00 ± 0.05 0.079 ± 0.002 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. AV02-0175EN - April 16, 2009 G2x