JSMC JCS1HN60 N-channel mosfet Datasheet

N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
R
JCS1HN60
主要参数
MAIN
CHARACTERISTICS
ID
封装 Package
0.5 A
TO-92
1.0 A
IPAK/DPKA
600 V
VDSS
Rdson(Vgs=10V) 15 Ω
6.1 nC
Qg
用途
APPLICATIONS
 高频开关电源
 电子镇流器
 High
产品特性
FEATURES
 Low gate charge
 Low Crss (typical 3.7pF )
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
 RoHS product
 低栅极电荷
 低 Crss (典型值 3.7pF)
 开关速度快
 产品全部经过雪崩测试
 高抗 dv/dt 能力
 RoHS 产品
efficiency switch
mode power supplies
 Electronic lamp ballasts
based on half bridge
订货信息 ORDER MESSAGE
订 货 型 号
Order codes
印
记
Marking
封
装
Package
无卤素
Halogen Free
包
装
Packaging
器件重量
Device Weight
JCS1HN60T-O-T-N-A
JCS1HN60T
TO-92
否
NO
编带 Brede
0.216 g(typ)
JCS1HN60V-O-V-N-B
JCS1HN60V
IPAK
否
NO
条管 Tube
0.350 g(typ)
JCS1HN60R-O-R-N-B
JCS1HN60R
DPAK
否
NO
条管 Tube
0.300 g(typ)
版本:201607A
1/13
JCS1HN60
R
绝对最大额定值
ABSOLUTE RATINGS (Tc=25℃)
项
目
Parameter
符 号
Symbol
数
值
单 位
Value
JCS1HN60T
JCS1HN60V/R
Unit
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
600
600
V
连续漏极电流
Drain Current
ID T=25℃
T=100℃
0.5
1.0
A
0.31
0.62
A
2.0
4.0
A
-continuous
最大脉冲漏极电流(注 1)
IDM
Drain Current - pulse
(note 1)
最高栅源电压
Gate-Source Voltage
VGSS
±30
V
单脉冲雪崩能量(注 2)
Single Pulsed Avalanche Energy
(note 2)
EAS
47
mJ
雪崩电流(注 1)
Avalanche Current(note 1)
IAR
1.0
A
重复雪崩能量(注 1)
Repetitive Avalanche Current
(note 1)
EAR
3.0
mJ
二极管反向恢复最大电压变化速率
(注 3)
Peak Diode
(note 3)
Recovery
dv/dt
耗散功率
Power Dissipation
最高结温及存储温度
Operating
and
Temperature Range
Storage
引线最高焊接温度
Maximum Lead Temperature for
Soldering Purposes
版本:201607A
dv/dt
4.2
4.2
V/ns
PD TC=25℃
-Derate above
25℃
3.0
30
W
0.025
0.24
W/℃
TJ,TSTG
TL
-55~+150
℃
300
℃
2/13
JCS1HN60
R
电特性 ELECTRICAL CHARACTERISTICS
项
目
Parameter
符 号
Symbol
测试条件
Tests conditions
最小 典型 最 大 单 位
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
反向栅极体漏电流
Gate-body leakage current,
reverse
ID=250μA, VGS=0V
600
-
-
V
ΔBVDSS/Δ
ID=1mA, referenced to 25℃
TJ
-
0.60
-
V/℃
VDS=600V,VGS=0V, TC=25℃
-
-
10
μA
VDS=480V,
-
-
100
μA
VDS=0V, VGS =30V
-
-
100
nA
IGSSR
VDS=0V, VGS =-30V
-
-
-100 nA
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0
-
4.0
V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON)
VGS =10V , ID=0.5A
-
11
15
Ω
正向跨导
Forward Transconductance
gfs
-
0.8
-
S
-
178 221
pF
-
19
27
pF
-
3.7 4.8
pF
TC=125℃
通态特性 On-Characteristics
VDS = 40V , ID=0.5(note 4)
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
反向传输电容
Reverse transfer capacitance
Crss
版本:201607A
VDS=25V,
VGS =0V,
f=1.0MHZ
3/13
JCS1HN60
R
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
VDD=300V,ID=1.0A,RG=25Ω
(note 4,5)
-
15
45
ns
-
46 105
ns
td(off)
-
26
62
ns
下降时间 Turn-Off Fall time
tf
-
37
82
ns
栅极电荷总量 Total Gate Charge
Qg
-
6.1 7.2
nC
栅-源电荷 Gate-Source charge
Qgs
-
1.0
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
3.0
-
nC
VDS =480V ,
ID=1.0A
VGS =10V (note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
-
-
1.0
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
-
-
4.0
A
-
-
1.0
V
-
185
-
ns
-
0.51
-
μC
单
位
正向压降
Drain-Source Diode Forward
Voltage
VSD
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
VGS=0V,
IS=1.0A
VGS=0V, IS=1.0A
dIF/dt=100A/μs (note 4)
热特性 THERMAL CHARACTERISTIC
项
目
符
最大
号
Max
Parameter
Symbol
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
-
4.75
℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
120
105
℃/W
JCS1HN60T JCS1HN60V/R
Unit
注释:
Notes:
1:脉冲宽度由最高结温限制
1 : Pulse width limited by maximum junction
2:L=59mH, IAS=1.0A, VDD=50V,
RG=25 Ω,起始结
温 TJ=25℃
3:ISD ≤1.0A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
temperature
2:L=59mH, IAS=1.0A, VDD=50V, RG=25 Ω, Starting
TJ=25℃
3 : ISD ≤1.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201607A
4/13
JCS1HN60
R
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
10
1
150℃
ID [A]
IDS (on ) [A]
Top
1
Notes:
1. 250μs pulse test
2. TC=25℃
25℃
Notes:
1.250μs pulse test
2.VDS=40V
0.1
0.1
1
10
2
VDS [V]
4
6
8
10
VGS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
15
VGS=20V
14
IDR [A]
RDS (on ) [ Ω ]
16
VGS=10V
13
1
150℃
12
25℃
Note :T j=25℃
11
10
0.0
0.5
1.0
1.5
0.1
0.3
2.0
ID [A]
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VSD [V]
Gate Charge Characteristics
VG SG a t e S o u r c e V o l t a g e [ V ]
Capacitance Characteristics
VDS=480V
10
VDS=300V
VDS=120V
8
6
4
2
0
0
1
2
3
4
5
6
7
Qg T o l t a l G a t e C h a r g e [ n C ]
版本:201607A
5/13
JCS1HN60
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Resistance Variation
vs. Temperature
Breakdown Voltage Variation
vs. Temperature
3.0
2.5
1.1
R D(on ) (Normalized)
BV DS (Normalized)
1.2
1.0
0.9
Notes:
1. VGS=0V
2. ID=250A
-50
-25
0
25
50
75
100
125
T j [℃ ]
Maximum Safe Operating Area
For JCS1HN60T
1.5
1.0
Notes:
1. VGS=10V
2. ID=0.5A
0.5
0.8
-75
2.0
150
0.0
-75
-50
-25
0
25
50
75
100
125
150
Tj [ ℃ ]
Maximum Safe Operating Area
For JCS1HN60V/R
Maximum Drain Current
vs. Case Temperature
版本:201607A
6/13
JCS1HN60
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS1HN60T
1
r(t) (NORMALIZED)
0.5
0.2
Notes :
0.1
0.1
1. ZθJA(t)= r(t) * RθJA
2. Duty Factor, D=t1/t2
0.05
3. TJM – TA = PDM * ZθJA(t)
0.02
single pulse
0.01
0.01
-2
10
-1
10
10
0
10
1
10
2
10
3
4
10
5
10
t1 [ms]
Transient Thermal Response Curve
For JCS1HN60V/R
版本:201607A
7/13
R
JCS1HN60
外形尺寸 PACKAGE MECHANICAL DATA
TO-92
版本:201607A
单位 Unit:mm
8/13
JCS1HN60
R
外形尺寸 PACKAGE MECHANICAL DATA
IPAK
Gh
版本:201607A
单位 Unit:mm
9/13
JCS1HN60
R
外形尺寸 PACKAGE MECHANICAL DATA
DPAK
Gh
版本:201607A
单位 Unit:mm
10/13
JCS1HN60
R
外形尺寸 PACKAGE MECHANICAL DATA
IPAK
Gf
版本:201607A
单位 Unit:mm
11/13
JCS1HN60
R
外形尺寸 PACKAGE MECHANICAL DATA
DPAK
Gf
版本:201607A
单位 Unit:mm
12/13
JCS1HN60
R
注意事项
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
NOTE
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
CONTACT
吉林华微电子股份有限公司
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site:www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411
传真: 86-432-64671533
版本:201607A
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64675588
64675688
64678411
Fax: 86-432-64671533
13/13
JCS1HN60
R
附录(Appendix):修订记录(Revision History)
日期 Date
旧版本 Last Rev.
2016-07-01
版本:201607A
新版本 New Rev.
修订内容 Description of Changes
201607A
新下发
14/13
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