BAS16D-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Material categorization: For definitions of compliance www.vishay.com/doc?99912 MECHANICAL DATA Case: SOD-123 Weight: approx. 9.4 mg Packaging codes/options: please see 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART BAS16D-G ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAS16D-G3-08 or BAS16D-G3-18 Single diode AK Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Repetitive peak reverse voltage Forward current (continuous) SYMBOL VALUE UNIT VR 75 V VRRM 100 V IF 250 mA A t = 1 μs IFSM 2 t = 1 ms IFSM 1 A t=1s IFSM 0.5 A Ptot 350 mW SYMBOL VALUE UNIT RthJA 375 K/W Tj 150 °C (1) Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C Non-repetitive peak forward current Power dissipation (1) THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Maximum junction temperature Storage temperature range Note (1) Valid provided electrodes are kept at ambient temperature Rev. 1.0, 13-May-13 Document Number: 85410 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS16D-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MAX. UNIT IF = 1 mA VF 0.715 V IF = 10 mA VF 0.855 V IF = 50 mA VF 1 V Forward voltage TYP. IF = 150 mA VF 1.25 V VR = 25 V, Tj = 150 °C IR 30 μA Leakage current VR = 75 V IR 1 μA VR = 75 V, Tj = 150 °C IR 50 μA VR = 0; f = 1 MHz CD 2 pF IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 trr 6 ns Diode capacitance Reverse recovery time MIN. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) mW 500 103 Tj = 100 °C 102 400 Ptot IF (mA) Tj = 25 °C 10 300 1 200 10- 1 100 10- 2 0 0 1 2 VF (V) 18105 0 100 200 °C Tamb 18186 Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 104 Tj = 25 °C 5 10 Tj = 25 °C 1.1 f = 1 kHz 2 f = 1 MHz 3 1.0 CD (VR) 2 102 5 CD (0 V) Rf (Ω) 5 0.9 0.8 2 10 5 0.7 2 10-2 17438 10-1 1 10 Fig. 2 - Dynamic Forward Resistance vs. Forward Current Rev. 1.0, 13-May-13 0 102 IF (mA) 17440 2 4 6 8 10 VR (V) Fig. 4 - Relative Capacitance vs. Reverse Voltage Document Number: 85410 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS16D-G www.vishay.com Vishay Semiconductors 104 5 2 103 IR (nA) 5 2 102 5 2 10 5 VR = 20 V 2 1 0 100 17441 200 Tj (°C) Fig. 5 - Leakage Current vs. Junction Temperature A 100 IFRM I 5 4 3 2 V = tp/T IFRM V=0 10 T = 1/fp tp t 0.1 5 4 3 2 T 0.2 1 0.5 5 4 3 2 0.1 18106 10-5 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 s tp Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.0, 13-May-13 Document Number: 85410 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS16D-G www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.0, 13-May-13 Document Number: 85410 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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