ON MPSA44RL1 High voltage transistor Datasheet

MPSA44
Preferred Device
High Voltage Transistor
NPN Silicon
Features
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• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
400
Vdc
Collector −Base Voltage
VCBO
500
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
Collector Current − Continuous
IC
300
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to
+150
°C
Operating and Storage Junction
Temperature Range
2
BASE
1
EMITTER
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
Characteristic
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−92
(TO−226AA)
CASE 29−11
STYLE 1
1
2
MPS
A44
AYWWG
G
3
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Publication Order Number:
MPSA44/D
MPSA44
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
400
−
Vdc
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
500
−
Vdc
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
500
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Collector Cutoff Current
(VCB = 400 Vdc, IE = 0)
ICBO
−
0.1
mAdc
Collector Cutoff Current
(VCE = 400 Vdc, VBE = 0)
ICES
−
500
nAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
−
0.1
mAdc
40
50
45
40
−
200
−
−
−
−
−
0.4
0.5
0.75
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DC Current Gain (Note 1)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
hFE
−
Collector −Emitter Saturation Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0.1 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Vdc
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
−
0.75
Vdc
Output Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
7.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
130
pF
Small−Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
hfe
1.0
−
−
SMALL− SIGNAL CHARACTERISTICS
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Package
Shipping †
TO−92
5000 Units / Box
TO−92
(Pb−Free)
5000 Units / Box
TO−92
2000 / Tape & Reel
MPSA44RL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
MPSA44RLRA
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
Device
MPSA44
MPSA44G
MPSA44RL1
MPSA44RLRAG
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS
MPSA44
160
TA = 125°C
hFE , DC CURRENT GAIN
140
120
VCE = 10 V
100
25°C
80
60
40
−55°C
20
1.0
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mA)
200 300
0.5
0.4
IC = 1.0 mA
TA = 25°C
0.2
0.1
0
10
30
100
300
1.0 k 3.0 k
IB, BASE CURRENT (mA)
10 k
50 k
Figure 2. Collector Saturation Region
1.0
1000
IC, COLLECTOR CURRENT (mA)
TA = 25°C
VBE(sat) @ IC/IB = 10
0.8
V, VOLTAGE (VOLTS)
IC = 50 mA
0.3
Figure 1. DC Current Gain
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
VCE(sat) @ IC/IB = 10
1.0 ms
300
200
0
0.1
0.3
1.0
3.0
10
30
IC, COLLECTOR CURRENT (mA)
100
10
Figure 3. “On” Voltages
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
VALID FOR DUTY CYCLE ≤ 10%
2.0
MPSA44
20
50
100
10
5.0
VCE, COLLECTOR VOLTAGE (VOLTS)
200
500
|h fe |, SMALL−SIGNAL CURRENT GAIN
10
Cib
50
20
Cob
5.0
TA = 25°C
f = 1.0 MHz
2.0
1.0
0.3 0.5
1.0 s
Figure 4. Active Region − Safe Operating Area
100
10
100 ms
20
1.0
1.0
300
TC = 25°C
TA = 25°C
100
2.0
C, CAPACITANCE (pF)
IC = 10 mA
1.0
3.0
10
30
REVERSE BIAS (VOLTS)
100
3.0
2.0
1.5
1.0
0.1
300
VCE = 10 V
f = 10 MHz
TA = 25°C
Figure 5. Capacitance
0.2 0.3
1.0
3.0
10
IC, COLLECTOR CURRENT (mA)
30
Figure 6. High Frequency Current Gain
http://onsemi.com
3
100
MPSA44
10
Vin
+9.7 V
t, TIME (s)
μ
5.0
PW = 50 mS
DUTY CYCLE = 2.0%
2.0
1.0
0
−4.0 V
0.5
VCC = 150 V
IC/IB = 10
TA = 25°C
VBE(off) = 4.0 Vdc
0.2
0.1
1.0
VCC
tr
RL
td
3.0
10
30
IC, COLLECTOR CURRENT (mA)
50
Vout
100
Vin
RB
CS ≤ 4.0 pF*
Figure 7. Turn−On Switching Times and Test Circuit
10
Vin
5.0
+10.7 V
t, TIME (s)
μ
ts
PW = 50 mS
DUTY CYCLE = 2.0%
2.0
1.0
0.5
tf
VCC = 150 V
IC/IB = 10
TA = 25°C
0.2
−11.4 V
VCC
RL
0.1
1.0
3.0
10
30
IC, COLLECTOR CURRENT (mA)
50
100
Vout
Vin
RB
Figure 8. Turn−Off Switching Times and Test Circuit
*Total Shunt Capacitance or Test Jig and Connectors.
http://onsemi.com
4
CS ≤ 4.0 pF*
MPSA44
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPSA44/D
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