Littelfuse MG1250W-XBN2MM Ac motor control Datasheet

Power Power
ModuleModule
1200V 50A IGBT Module
MG1250W-XBN2MM
RoHS
Features
igh level of
• H
integration—only one
power semiconductor
module required for the
whole drive
ree wheeling diodes
• F
with fast and soft reverse
recovery
ow saturation voltage
• L
and positive temperature
coefficient
• Industry standard
package with insulated
copper base plate and
soldering pins for PCB
mounting
ast switching and short
• F
tail current
emperature sense
• T
included
Applications
• AC motor control
• Motion/servo control
• Inverter and power
supplies
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max. Junction Temperature
TJ max)
Max
Unit
150
°C
TJ op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Md
Mounting Torque
AC, t=1min
3000
V
250
Recommended (M5)
Weight
2.5
5
N·m
300
g
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
TJ=25°C
1200
V
±20
V
TC=25°C
75
A
TC=80°C
50
A
tp=1ms
100
A
260
W
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I 2t
MG1250W-XBN2MM
TJ=25°C
1200
V
TC=25°C
75
A
TC=80°C
50
A
tp=1ms
100
A
TJ =125°C, t=10ms, VR=0V
680
A 2s
247
1
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Power
ModuleModule
1200V 50A IGBT Module
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=2.0mA
5.0
5.8
6.5
V
Collector - Emitter
IC=50A, VGE=15V, TJ=25°C
1.7
V
Saturation Voltage
IC=50A, VGE=15V, TJ=125°C
1.9
V
IGBT
VGE(th)
VCE(sat)
IICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
VCE=1200V, VGE=0V, TJ=25°C
1
mA
VCE=1200V, VGE=0V, TJ=125°C
10
mA
400
nA
VCE=0V, VGE=±15V, TJ=125°C
VCE=600V, IC=50A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
IC=50A
tf
Fall Time
VGE=±15V
VCC=600V
RG =18Ω
Inductive Load
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
-400
4.0
Ω
0.47
μC
3.6
nF
0.16
nF
TJ=25°C
90
ns
TJ=125°C
90
ns
TJ=25°C
30
ns
TJ=125°C
50
ns
TJ=25°C
420
ns
TJ=125°C
520
ns
TJ=25°C
70
ns
TJ=125°C
90
ns
TJ=25°C
4.9
mJ
TJ=125°C
6.6
mJ
TJ=25°C
4.0
mJ
TJ=125°C
4.9
mJ
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
200
Junction-to-Case Thermal Resistance (Per IGBT)
A
0.48
K/W
Diode
VF
Forward Voltage
tRR
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Erec
Reverse Recovery Energy
RthJCD
MG1250W-XBN2MM
IF=50A, VGE=0V, TJ =25°C
1.65
V
IF=50A, VGE=0V, TJ =125°C
1.65
V
IF=50A, VR=600V
diF/dt=1200A/µs
TJ=125°C
275
ns
Junction-to-Case Thermal Resistance (Per Diode)
248
2
50
A
4.4
mJ
0.78
K/W
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Power
ModuleModule
1200V 50A IGBT Module
Diode-Rectifier Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25°C
1600
V
IF(AV)
Average Forward Current
TC=80°C
50
A
IFRM
Non-Repetitive Surge Forward
Current
TJ=45°C, t=10ms, 50Hz
350
TJ=45°C, t=8.3ms, 60Hz
385
TJ=45°C, t=10ms, 50Hz
612
TJ=45°C, t=8.3ms, 60Hz
741
I2t
A
A 2s
Diode-Rectifier Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
VF
Forward Voltage
IR
Reverse Leakage Current
RthJCD
Junction-to-Case Thermal
Resistance (Per Diode)
Test Conditions
Min
Typ
IF=50A, TJ =25°C
1.1
IF=50A, TJ =125°C
1.05
Max
Unit
V
V
VR=1600V, TJ =25°C
50
μA
VR=1600V, TJ =125°C
1
mA
0.68
K/W
Brake-Chopper Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
TJ=25°C
1200
V
±20
V
TC=25°C
55
A
TC=80°C
40
A
tp=1ms
80
A
195
W
TJ=25°C
1200
V
TC=25°C
25
A
TC=80°C
15
A
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
MG1250W-XBN2MM
tp=1ms
30
A
TJ =125°C, t=10ms, VR=0V
60
A 2s
249
3
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Power
ModuleModule
1200V 50A IGBT Module
Brake-Chopper Electrical and Thermal Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=1.5mA
5.0
5.8
6.5
V
Collector - Emitter
IC=40A, VGE=15V, TJ=25°C
1.8
V
Saturation Voltage
IC=40A, VGE=15V, TJ=125°C
2.05
V
IGBT
VGE(th)
VCE(sat)
IICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
VCE=0V, VGE=±15V, TJ=125°C
VCE=600V, IC=40A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
tr
Rise Time
VCC=600V
td(off)
Turn - off Delay Time
IC=40A
RG =27Ω
tf
Fall Time
VGE=±15V
Inductive Load
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
Junction-to-Case Thermal
Resistance (Per IGBT)
-400
0.25
μA
2
mA
400
nA
6
Ω
0.33
μC
2.5
nF
0.11
nF
TJ =25°C
90
ns
TJ =125°C
90
ns
TJ =25°C
30
ns
TJ =125°C
50
ns
TJ =25°C
420
ns
TJ =125°C
520
ns
ns
TJ =25°C
70
TJ =125°C
90
ns
TJ =25°C
4.1
mJ
TJ =125°C
6.0
mJ
TJ =25°C
3.1
mJ
TJ =125°C
3.6
mJ
160
A
tpsc≤10μS, VGE=15V; TJ=125°C, VCC=900V
0.62
K/W
Diode
VF
Forward Voltage
tRR
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Erec
Reverse Recovery Energy
RthJCD
Junction-to-Case Thermal
Resistance (Per Diode)
IF=15A , VGE=0V, TJ =25°C
1.65
V
IF=15A , VGE=0V, TJ =125°C
1.75
V
IF=15A, VR=600V
diF/dt=-400A/µs
TJ=125°C
150
ns
15
A
1.15
mJ
1.55
K/W
Max
Unit
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
R25
Resistance
Tc=25°C
B25/50
MG1250W-XBN2MM
250
4
Min
Typ
5
KΩ
3375
K
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Power
ModuleModule
1200V 50A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
Figure 2: Typical Output Characteristics
for IGBT Inverter
100
100
VGE =19V
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE = 9V
VGE =15V
80
Tj =25°C
60
IC (A)
IC (A)
80
40
60
40
Tj =125°C
20
20
0
0
0.5
1.0
1.5 2.0
VCE˄V˅
2.5
3.0
0
3.5
Figure 3: T
ypical Transfer Characteristics
for IGBT Inverter
12
VCE =20V
40
Eon Eoff (mJ)
IC (A)
Tj =25°C
60
VCE=600V
IC=50A
VGE=±15V
Tj =125°C
10
80
Tj =125°C
20
8
Eon
6
4
Eoff
2
0
5
6
7
9
8
VGE˄V˅
10
11
0
12
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
20
16
10
20
RG˄Ω˅
30
40
120
VCE=600V
RG=18Ω
VGE=±15V
Tj =125°C
100
80
12
Eon
8
60
RG= 18Ω
VGE=±15V
Tj =125°C
40
Eoff
4
0
0
0
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
IC (A)
Eon Eoff (mJ)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
100
MG1250W-XBN2MM
TJ =125°C
30
20
40
60
IC˄A˅
80
0
100
251
5
0
200
400
600 800 1000 1200 1400
VCE˄V˅
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Power
ModuleModule
1200V 50A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
100
8.0
6.0
Erec (mJ)
IF (A)
80
IF=50A
VCE=600V
Tj =125°C
60
4.0
40
Tj =125°C
2.0
20
Tj =25°C
0
0
0.5
1.0
1.5
V ˄V˅
2.0
0
2.5
0
10
20
F
Figure 9: Switching Energy vs. Forward Current
for Diode Inverter
1
RG=18Ω
VCE=600V
Tj =125°C
Diode
IGBT
ZthJC (K/W)
Erec (mJ)
40
Figure 10: Transient Thermal Impedance of
Diode and IGBT Inverter
8.0
6.0
30
RG˄Ω˅
4.0
0.1
2.0
0
0
20
40
60
80
0.01
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
100
IF (A)
Figure 11: Diode Forward Characteristics
for IGBT Inverter
Figure 12: Typical Output Characteristics
for IGBT Brake Chopper
80
100
VGE =15V
80
60
Tj =25°C
IC (A)
IF (A)
60
Tj =125°C
40
40
Tj =125°C
20
20
Tj =25°C
0
MG1250W-XBN2MM
0
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF˄V˅
252
6
0.5
1.0
1.5 2.0
VCE˄V˅
2.5
3.0
3.5
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Power
ModuleModule
1200V 50A IGBT Module
Figure 13: Diode Forward Characteristics
for Diode Brake Chopper
Figure 14: NTC Characteristics
100000
30
IFGE
=25=15V
A
V
VCE=600V
TVj =125°C
25
10000
Tj =25°C
15
10
TVj =25°C
R (¡)
IF (A)
20
R
TVj =125°C
1000
Tj =125°C
5
0
0
0.4
0.8
1.2 1.6
VF˄V˅
2.0
2.4
100
0
2.8
20
40 60 80 100 120 140 160
TC˄°C˅
Circuit Diagram
Part Marking System
Part Numbering System
MG1250 W-XBN2MM
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
CURRENT RATING
50: 50A
MG1250W-XBN2MM
ASSEMBLY SITE
MG1250W-XBN2MM
WAFER TYPE
CIRCUIT TYPE
XB: XB
LOT NUMBER
Space
reserved
for QR
code
PACKAGE TYPE
W: Package W
253
7
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Power
ModuleModule
1200V 50A IGBT Module
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG1250W-XBN2MM
MG1250W-XBN2MM
300g
Bulk Pack
20
Dimensions-Package W
$
Ø
Dimensions (mm)
MG1250W-XBN2MM
254
8
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
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