Intersil HS1-303RH/883S Radiation hardened cmos analog switch Datasheet

HS-302RH/883S, HS-303RH/883S,
HS-306RH/883S, HS-307RH/883S,
HS-384RH/883S, HS-390RH/883S
Radiation Hardened
CMOS Analog Switches
September 1995
Features
Description
• This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HS-3XXRH/883S family of analog switches are
monolithic devices fabricated using Radiation Hardened
CMOS technology and the Intersil dielectric isolation process for latch-up free operation. Improved total dose hardness is obtained by layout (thin oxide tabs extending to a
channel stop) and processing (hardened gate oxide). These
switches offer low-resistance switching performance for analog voltages up to the supply rails. “ON” resistance is low
and stays reasonably constant over the full range of operating voltage and current. “ON” resistance also stays reasonably constant when exposed to radiation, being typically 30Ω
pre-rad and 35Ω post 100K RAD-Si. All devices provide
break-before-make switching.
• Radiation Hardened
- Functional Total Dose Exceeds 1 x 105 RAD Si
• Pin for Pin Compatible with Intersil HI-3XX Series
Analog Switches
• Analog Signal Range 15V
• Low Leakage
• Low RON
• No Latch Up
The 6 devices in this switch series are differentiated by type
of switch action, pinout and digital logic levels. The HS-302/
303/384/390RH/883S switches have 5V digital inputs while
the HS-306/307RH/883S switches have 15V digital inputs.
All devices are available in Ceramic Flatpack and SBDIP
packages. The HS-3XXRH/883S switches can directly
replace the HI-3XX series devices.
• Versions for 5V and 15V Digital Systems
• Low Operating Power
• Military Temperature Range -55oC to +125oC
Applications
• Sample and Hold i.e. Low Leakage Switching
• Op Amp Gain Switching i.e. Low ON Resistance
Functional Diagram
• Switched Capacitor Filters
• Low Level Switching Circuits
IN
• Satellites
N
P
D
• Nuclear Reactor Controls
• Military Environments
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HS1-302RH/883S
-55oC to +125oC
Intersil /883 Class S Equivalent
14 Lead SBDIP
HS9-302RH/883S
-55oC to +125oC
Intersil /883 Class S Equivalent
14 Lead Ceramic Flatpack
HS1-302RH/Sample
+25oC
Sample
14 Lead SBDIP
HS9-302RH/Sample
+25oC
Sample
14 Lead Ceramic Flatpack
HS1-303RH/883S
-55oC to +125oC
Intersil /883 Class S Equivalent
14 Lead SBDIP
HS9-303RH/883S
-55oC to +125oC
Intersil /883 Class S Equivalent
14 Lead Ceramic Flatpack
HS1-303RH/Sample
+25oC
Sample
14 Lead SBDIP
HS9-303RH/Sample
+25oC
Sample
14 Lead Ceramic Flatpack
HS1-306RH/883S ( Note 1)
-55oC to +125oC
Intersil /883 Class S Equivalent
14 Lead SBDIP
HS9-306RH/883S ( Note 1)
-55oC to +125oC
Intersil /883 Class S Equivalent
14 Lead Ceramic Flatpack
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
Spec Number
File Number
518526
3067.1
HS-3XXRH/883S
Ordering Information
(Continued)
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HS1-306RH/Sample (Note 1)
+25oC
Sample
14 Lead SBDIP
HS9-306RH/Sample (Note 1)
+25oC
Sample
14 Lead Ceramic Flatpack
HS1-307RH/883S
-55oC to +125oC
Intersil /883 Class S Equivalent
14 Lead SBDIP
HS9-307RH/883S
-55oC to +125oC
Intersil /883 Class S Equivalent
14 Lead Ceramic Flatpack
HS1-307RH/Sample
+25oC
Sample
14 Lead SBDIP
HS9-307RH/Sample
+25oC
Sample
14 Lead Ceramic Flatpack
HS1-384RH/883S (Note 1)
-55oC to +125oC
Intersil /883 Class S Equivalent
16 Lead SBDIP
HS9-384RH/883S (Note 1)
-55oC to +125oC
Intersil /883 Class S Equivalent
16 Lead Ceramic Flatpack
HS1-384RH/Sample (Note 1)
+25oC
Sample
16 Lead SBDIP
HS9-384RH/Sample (Note 1)
+25oC
Sample
16 Lead Ceramic Flatpack
HS1-390RH/883S
-55oC to +125oC
Intersil /883 Class S Equivalent
16 Lead SBDIP
HS9-390RH/883S
-55oC to +125oC
Intersil /883 Class S Equivalent
16 Lead Ceramic Flatpack
HS1-390RH/Sample
+25oC
Sample
16 Lead SBDIP
HS9-390RH/Sample
+25oC
Sample
16 Lead Ceramic Flatpack
NOTE:
1. Not recommended for new design.
Pinouts (Switch States are for Logic “1” Inputs)
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
DUAL DPST
HS-302RH/883S
HS-306RH/883S
NC 1
S3 2
D3 3
14 V+
13 S4
12 D4
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
DUAL SPDT
HS-303RH/883S
HS-307RH/883S
1
NC
2
S3
3
D3
DUAL DPST
HS-384RH/883S
14 V+
D1
1
16 S1
D1
1
16 S1
13 S4
NC
2
15 IN1
NC
2
15 IN1
D3
3
14 V-
D3
3
14 V-
S3
4
13 GND
S3
4
13 GND
12 D4
D1 4
11 D2
D1
4
11 D2
S1 5
10 S2
S1
5
10 S2
IN1
6
9 IN2
GND
7
8 V-
IN1 6
GND 7
9 IN2
8 V-
LOGIC
SWITCH
1-4
LOGIC
SW1
SW2
0
OFF
0
1
ON
1
DUAL SPDT
HS-390RH/883S
S4
5
12 NC
S4
5
12 NC
D4
6
11 V+
D4
6
11 V+
NC
7
10 IN2
NC
7
10 IN2
D2
8
9 S2
D2
8
9 S2
SW3
SW4
LOGIC
SWITCH
1-4
LOGIC
SW1
SW2
OFF
ON
0
OFF
0
OFF
ON
ON
OFF
1
ON
1
ON
OFF
Spec Number
2
SW3
SW4
518526
HS-3XXRH/883S
Pinouts (Switch States are for Logic “1” Inputs)
(Continued)
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDIP3-F14
TOP VIEW
DUAL DPST
HS-302RH/883S
HS-306RH/883S
NC
S3
D3
D1
S1
IN1
DUAL SPDT
HS-303RH/883S
HS-307RH/883S
1
14
2
13
3
12
4
11
5
10
6
9
7
8
GND
V+
NC
S4
S3
D4
D3
D2
D1
S2
S1
IN2
IN1
V-
1
14
2
13
3
12
4
11
5
10
6
9
7
8
GND
V+
S4
D4
D2
S2
IN2
V-
LOGIC
SWITCH 1 - 4
LOGIC
SW1 AND SW2
SW3 AND SW4
0
OFF
0
OFF
ON
1
ON
1
ON
OFF
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDIP4-F16
TOP VIEW
DUAL DPST
HS-384RH/883S
D1
NC
D3
S3
DUAL SPDT
HS-390RH/883S
1
16
2
15
3
14
4
13
5
12
S4
D4
NC
D2
S1
D1
IN1
NC
V-
D3
GND
S3
NC
S4
V+
D4
IN2
NC
S2
D2
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
S1
IN1
VGND
NC
6
11
7
10
8
9
LOGIC
SWITCH 1 - 4
LOGIC
SW1 AND SW2
SW3 AND SW4
0
OFF
0
OFF
ON
1
ON
1
ON
OFF
V+
IN2
S2
Spec Number
3
518526
Specifications HS-3XXRH/883S
Absolute Maximum Ratings
Reliability Information
Supply Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . +44V
+VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +22V
-VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-22V
Analog Input Overvoltages:
+VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +VSUPPLY +1.5V
-VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY - 1.5V
Digital Input Overvoltage:
+VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+VSUPPLY +4V
-VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY -4V
Peak Current, S or D Pulsed at 1ms, 10% Duty Cycle Max . . . 40mA
Continuous Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Lead Temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . .≤ +300oC
Thermal Resistance
θJA
θJC
14 Lead SBDIP Package . . . . . . . . . . . . .
70oC/W
19oC/W
14 Lead Ceramic Flatpack Package . . . . 105oC/W 17oC/W
16 Lead SBDIP Package . . . . . . . . . . . . .
70oC/W
19oC/W
16 Lead Ceramic Flatpack Package . . . . 105oC/W 17oC/W
Maximum Package Power Dissipation at +125oC Ambient
14 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W
14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . 0.48W
16 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W
16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . .0.48
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
14 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/oC
14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . 9.5mW/oC
16 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/oC
16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . 9.5mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (± VSupply) . . . . . . . . . . . . . . . . . . . . . ±15V
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V
PARAMETER
“Switch On” Resistance
SYMBOL
+RDS
-RDS
Leakage Current Into
the Source Terminal of
an “Off” Switch
+IS(OFF)
-IS(OFF)
Leakage Current into
the Drain Terminal of an
“Off” Switch
+ID(OFF)
-ID(OFF)
Leakage Current from
an “On” Driver Into the
Switch (Drain & Source)
+ID(ON)
-ID(ON)
Low Level Input
Address Current
High Level Input
Address Current
IAL
IAH
CONDITIONS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
VD = -10V, IS = 10mA,
S1/S2/S3/S4
VS = +14V, VD = -14V,
S1/S2/S3/S4
VS = -14V, VD = +14V,
S1/S2/S3/S4
VS = -14V, VD = +14V,
S1/S2/S3/S4
VS = +14V, VD = -14V,
S1/S2/S3/S4
VS = VD = +14V,
S1/S2/S3/S4
VS = VD = -14V,
S1/S2/S3/S4
All Channels VA = 0.8V
All Channels VA = 4.0V
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
50
Ω
2, 3
-55oC to +125oC
-
75
Ω
1
+25oC
-
50
Ω
2, 3
-55oC to +125oC
-
75
Ω
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-1
1
µA
2, 3
-55oC to +125oC
-1
1
µA
1
+25oC
-1
1
µA
2, 3
-55oC to +125oC
-1
1
µA
Spec Number
4
518526
Specifications HS-3XXRH/883S
TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V (Continued)
PARAMETER
SYMBOL
Positive Supply Current
I(+)
CONDITIONS
All Channels VA = 0.8V
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
10
µA
-
100
µA
-
0.5
mA
-
1
mA
-10
-
µA
-100
-
µA
-10
-
µA
-100
-
µA
2, 3
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
1
2, 3
Negative Supply
Current
I(-)
All Channels VA = 0.8V
1
2, 3
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
1
2, 3
LIMITS
-55oC
to
+125oC
+25oC
-55oC
to
+125oC
+25oC
-55oC
to
+125oC
+25oC
-55oC
to
+125oC
TABLE 1. HS-306RH/307RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V
PARAMETER
SYMBOL
“Switch On” Resistance
+RDS
+RDS
Leakage Current Into
the Source Terminal of
an “Off” Switch
+IS(OFF)
-IS(OFF)
Leakage Current into
the Drain Terminal of an
“Off” Switch
+ID(OFF)
-ID(OFF)
Leakage Current from
an “On” Driver Into the
Switch (Drain and
Source)
+ID(ON)
-ID(ON)
Low Level Input
Address Current
High Level Input
Address Current
IAL
IAH
CONDITIONS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
VD = -10V, IS = 10mA,
S1/S2/S3/S4
VS = +14V, VD = -14V,
S1/S2/S3/S4
VS = -14V, VD = +14V,
S1/S2/S3/S4
VS = -14V, VD = +14V,
S1/S2/S3/S4
VS = +14V, VD = -14V,
S1/S2/S3/S4
VS = VD = +14V,
S1/S2/S3/S4
VS = VD = -14V,
S1/S2/S3/S4
All Channels VA = 3.5V
All Channels VA = 11V
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
50
Ω
2, 3
-55oC to +125oC
-
75
Ω
1
+25oC
-
50
Ω
2, 3
-55oC to +125oC
-
75
Ω
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-2
2
nA
2, 3
-55oC to +125oC
-100
100
nA
1
+25oC
-1
1
µA
1, 2
-55oC to +125oC
-1
1
µA
1
+25oC
-1
1
µA
1, 2
-55oC to +125oC
-1
1
µA
Spec Number
5
518526
Specifications HS-3XXRH/883S
TABLE 1. HS-306RH/307RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V (Continued)
PARAMETER
SYMBOL
Positive Supply Current
I(+)
CONDITIONS
All Channels VA = 0V
All Channels VA = 15V
Negative Supply
Current
I(-)
All Channels VA = 0V
All Channels VA = 15V
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
10
µA
2, 3
-55oC to +125oC
-
100
µA
1
+25oC
-
10
µA
2, 3
-55oC to +125oC
-
100
µA
1
+25oC
-10
-
µA
2, 3
-55oC to +125oC
-100
-
µA
1
+25oC
-10
-
µA
2, 3
-55oC to +125oC
-100
-
µA
TABLE 2. HS-302RH/303RH/384RH/390RH/883S AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0V
PARAMETER
SYMBOL
Break-Before-Make
Time Delay (HS-303RH
& 390RH Only)
TOPEN
Switch Turn “On” Time
TON
Switch Turn “Off” Time
TOFF
CONDITIONS
RL = 300Ω, VS = +3V,
VAH = 5V
RL = 300Ω, VS = +3V
RL = 300Ω, VS = +3V
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
9
+25oC
30
150
ns
10, 11
-55oC to +125oC
-
300
ns
9
+25oC
-
300
ns
10, 11
-55oC to +125oC
-
500
ns
9
+25oC
-
250
ns
10, 11
-55oC to +125oC
-
450
ns
TABLE 2. HS-306RH/307RH/883S AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +15.0V, VAL = 0V
PARAMETER
SYMBOL
Break-Before-Make
Time Delay (HS-307RH
Only)
TOPEN
Switch Turn “On” Time
TON
Switch Turn “Off” Time
TOFF
CONDITIONS
RL = 300Ω, VS = +3V
RL = 300Ω, VS = +3V
RL = 300Ω, VS = +3V
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
9
+25oC
30
150
ns
10, 11
-55oC to +125oC
-
300
ns
9
+25oC
-
300
ns
10, 11
-55oC to +125oC
-
500
ns
9
+25oC
-
250
ns
10, 11
-55oC to +125oC
-
450
ns
Spec Number
6
518526
Specifications HS-3XXRH/883S
TABLE 3. HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1)
Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0V
HS-306RH/307RH/883S V- = -15V, V+ = +15V, VAH = +15.0V, VAL = 0V
PARAMETER
Switch Input Capacitance
Driver Input Capacitance
SYMBOL
CIS(OFF)
CC1
CC2
Switch Output
Off Isolation
Crosstalk
Charge Transfer
COS
VISO
VCR
VCTE
(NOTE 1)
CONDITIONS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
Measured Source to GND
+25oC
-
28
pF
VA = 0V
+25oC
-
10
pF
VA = 15V
+25oC
-
10
pF
Measured Drain to GND
+25oC
-
28
pF
VGEN = 1Vp-p, f = 1MHz
+25oC
40
-
dB
VGEN = 1Vp-p, f = 1MHz
+25oC
40
-
dB
VS = GND, CL = 0.01µF
+25oC
-
15
mV
NOTE:1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These
parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by
characterization based upon data from multiple production runs which reflect lot to lot and within lot variation.
TABLE 4. HS-302RH/303RH/384RH/390RH/883S DC POST 100K RAD (Si) ELECTRICAL CHARACTERISTICS
Tested Per Mil-Std-883. Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V
LIMITS
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
MIN
MAX
UNITS
+RDS
VD = 10V, IS = -10mA, S1/S2/S3/S4
+25oC
-
60
Ω
-RDS
VD = -10V, IS = 10mA, S1/S2/S3/S4
+25oC
-
60
Ω
Leakage Current Into the
Source Terminal of an “Off”
Switch
+IS(OFF)
VS = +14V, VD = -14V, S1/S2/S3/S4
+25oC
-100
100
nA
-IS(OFF)
VS = -14V, VD = +14V, S1/S2/S3/S4
+25oC
-100
100
nA
Leakage Current into the Drain
Terminal of an “Off” Switch
+ID(OFF)
VS = -14V, VD = +14V, S1/S2/S3/S4
+25oC
-100
100
nA
-ID(OFF)
VS = +14V, VD = -14V, S1/S2/S3/S4
+25oC
-100
100
nA
Leakage Current from an “On”
Driver Into the Switch (Drain &
Source)
-ID(ON)
VS = VD = +14V, S1/S2/S3/S4
+25oC
-100
100
nA
-ID(ON)
VS = VD = -14V, S1/S2/S3/S4
+25oC
-100
100
nA
All Channels VA = 0.8V
+25oC
-
100
µA
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
+25oC
-
1
mA
All Channels VA = 0.8V
+25oC
-100
-
µA
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
+25oC
-100
-
µA
“Switch On” Resistance
Positive Supply Current
Negative Supply Current
I(+)
I(-)
High Level Address Current
IAH
All Channels High
+25oC
-1
+1
µA
Low Level Address Current
IAL
All Channels Low
+25oC
-1
+1
µA
Break-Before-Make Time
Delay (HS-303RH/883S and
HS390RH/883S Only)
TOPEN
RL = 300Ω, VS = +3V, (Note 1)
+25oC
2
300
ns
Switch Turn-On Time
TON
RL = 300Ω, VS = +3V, (Note 2)
+25oC
-
500
ns
Switch Turn-Off Time
TOFF
RL = 300Ω, VS = +3V, (Note 2)
+25oC
-
450
ns
NOTES:
1. VAL = 0V; VAH = 5.0V
2. VAL = 0V; VAH = 4.0
Spec Number
7
518526
Specifications HS-3XXRH/883S
TABLE 4. HS-306/307RH/883S DC POST 100K RAD (Si) ELECTRICAL CHARACTERISTICS
Tested Per Mil-Std-883. Unless Otherwise Specified: HS-306RH/307RH/883S V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V
LIMITS
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
MIN
MAX
UNITS
+RDS
VD = 10V, IS = -10mA, S1/S2/S3/S4
+25oC
-
60
Ω
-RDS
VD = -10V, IS = 10mA, S1/S2/S3/S4
+25oC
-
60
Ω
Leakage Current Into the
Source Terminal of an “Off”
Switch
+IS(OFF)
VS = +14V, VD = -14V, S1/S2/S3/S4
+25oC
-100
100
nA
-IS(OFF)
VS = -14V, VD = +14V, S1/S2/S3/S4
+25oC
-100
100
nA
Leakage Current into the Drain
Terminal of an “Off” Switch
+ID(OFF)
VS = -14V, VD = +14V, S1/S2/S3/S4
+25oC
-100
100
nA
-ID(OFF)
VS = +14V, VD = -14V, S1/S2/S3/S4
+25oC
-100
100
nA
Leakage Current from an “On”
Driver Into the Switch (Drain &
Source)
-ID(ON)
VS = VD = +14V, S1/S2/S3/S4
+25oC
-100
100
nA
-ID(ON)
VS = VD = -14V, S1/S2/S3/S4
+25oC
-100
100
nA
All Channels VA = 0V
+25oC
-
100
µA
All Channels VA = 15V
+25oC
-
1
mA
All Channels VA = 0V
+25oC
-100
-
µA
All Channels VA = 15V
+25oC
-100
-
µA
“Switch On” Resistance
Positive Supply Current
I(+)
Negative Supply Current
I(-)
High Level Address Current
IAH
All Channels High
+25oC
-1
+1
µA
Low Level Address Current
IAL
All Channels Low
+25oC
-1
+1
µA
TOPEN
RL = 300Ω, VS = +3V, (Note 1)
+25oC
2
300
ns
TON
RL = 300Ω, VS = +3V, (Note 1)
+25oC
-
500
ns
RL = 300Ω, VS = +3V, (Note 1)
+25oC
-
450
ns
Break-Before-Make Time
Delay (HS-307RH/883S Only)
Switch Turn-On Time
Switch Turn-Off Time
TOFF
NOTE: 1. VAL = 0V; VAH = 15V
TABLE 5. HS-302RH/303RH/384RH/390RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS
Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
-5
5
Ω
+RDS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
1
+25oC
-RDS
VD = -10V, IS = 10mA,
S1/S2/S3/S4
1
+25oC
-5
5
Ω
Leakage Current
Into the Source
Terminal of an “Off”
Switch
+IS(OFF)
VS = +14V, VD = -14V,
S1/S2/S3/S4
1
+25oC
-2
2
nA
-IS(OFF)
VS = -14V, VD = +14V,
S1/S2/S3/S4
1
+25oC
-2
2
nA
Leakage Current
into the Drain
Terminal of an “Off”
Switch
+ID(OFF)
VS = -14V, VD = +14V,
S1/S2/S3/S4
1
+25oC
-2
2
nA
-ID(OFF)
VS = +14V, VD = -14V,
S1/S2/S3/S4
1
+25oC
-2
2
nA
Leakage Current
from an “On” Driver
Into the Switch
(Drain & Source)
+ID(ON)
VS = VD = +14V, S1/S2/S3/S4
1
+25oC
-2
2
nA
-ID(ON)
VS = VD = -14V, S1/S2/S3/S4
1
+25oC
-2
2
nA
“Switch On”
Resistance
Spec Number
8
518526
Specifications HS-3XXRH/883S
TABLE 5. HS-302RH/303RH/384RH/390RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS
Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V (Continued)
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
-100
100
nA
Low Level Input
Address Current
IAL
All Channels VA = 0.8V
1
+25oC
High Level Input
Address Current
IAH
All Channels VA = 4.0V
1
+25oC
-100
100
nA
Positive Supply
Current
I(+)
All Channels VA = 0.8V
1
+25oC
-1
1
µA
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
1
+25oC
-0.1
0.1
mA
All Channels VA = 0.8V
1
+25oC
-1
1
µA
1
+25oC
-1
1
µA
Negative Supply
Current
I(-)
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
TABLE 5. HS-306RH/307RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS
Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V
LIMITS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
+RDS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
1
+25oC
-5
5
Ω
-RDS
VD = -10V, IS = 10mA,
S1/S2/S3/S4
1
+25oC
-5
5
Ω
+IS(OFF)
VS = +14V, VD = -14V,
S1/S2/S3/S4
1
+25oC
-2
2
nA
-IS(OFF)
VS = -14V, VD = +14V,
S1/S2/S3/S4
1
+25oC
-2
2
nA
+ID(OFF)
VS = -14V, VD = +14V,
S1/S2/S3/S4
1
+25oC
-2
2
nA
-ID(OFF)
VS = +14V, VD = -14V,
S1/S2/S3/S4
1
+25oC
-2
2
nA
Leakage Current from an
“On” Driver Into the Switch
(Drain & Source)
+ID(ON)
VS = VD = +14V, S1/S2/S3/S4
1
+25oC
-2
2
nA
VS = VD = -14V, S1/S2/S3/S4
1
+25oC
-2
2
nA
Low Level Input Address
Current
IAL
All Channels VA = 3.5V
1
+25oC
-100
100
nA
High Level Input Address
Current
IAH
All Channels VA = 11V
1
+25oC
-100
100
nA
Positive Supply Current
I(+)
All Channels VA = 0V
1
+25oC
-1
1
µA
All Channels VA = 15V
1
+25oC
-1
1
µA
All Channels VA = 0V
1
+25oC
-1
1
µA
All Channels VA = 15V
1
+25oC
-1
1
µA
“Switch On” Resistance
Leakage Current Into the
Source Terminal of an
“Off” Switch
Leakage Current into the
Drain Terminal of an “Off”
Switch
Negative Supply Current
-ID(ON)
I(-)
Spec Number
9
518526
Specifications HS-3XXRH/883S
TABLE 6. APPLICABLE SUBGROUPS
GROUP A SUBGROUPS
CONFORMANCE GROUPS
METHOD
TESTED
RECORDED
Initial Test
100%/5004
1, 7, 9
1, (Note 2)
Interim Test
100%/5004
1, 7, 9, Deltas
1, Deltas, (Note 2)
PDA
100%/5004
1, 7, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
Group E, Subgroup 2
Sample/5005
1, 7
Group A (Note 1)
Group B
1, 2, 3, Deltas, (Note 2)
NOTES:
1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters on.y.
Spec Number
10
518526
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Intersil Space Level Product Flow
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test (T1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% PDA, Method 5004 (Note 1)
100% Delta Calculation (T0-T1)
100% Nondestructive Bond Pull, Method 2023
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
Equivalent, Method 1015
Sample - Wire Bond Pull Monitor, Method 2011
100% Interim Electrical Test (T2)
Sample - Die Shear Monitor, Method 2019 or 2027
100% Delta Calculation (T0-T2)
100% Internal Visual Inspection, Method 2010, Condition A
100% PDA, Method 5004 (Note 1)
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Final Electrical Test
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% Radiographic, Method 2012 (Note 2)
100% Fine/Gross Leak, Method 1014
100% External Visual, Method 2009
100% PIND, Method 2020, Condition A
Sample - Group A, Method 5005 (Note 3)
100% External Visual
Sample - Group B, Method 5005
100% Serialization
Sample - Group D, Method 5005
100% Initial Electrical Test (T0)
100% Data Package Generation (Note 4)
100% Static Burn-In 1, Condition A or B, 72hrs. min.,
+125oC min.
NOTES:
1. Failures from subgroup 1, 7 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
2. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
3. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
4. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. (See Table 6)
• Group B and D attributes and/or Generic data.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number
11
518526
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Irradiation Circuits
V+
NC
R1
R2
R3
R4
1
14
2
13
3
12
4
11
5
10
6
9
R8
S4
S3
S1
R2
R6
D2
D1
R1
R7
D4
D3
R3
R5
S2
R4
IN2
IN1
GND
8
7
1
14
2
13
3
12
4
11
5
10
6
9
S3
D3
D1
S1
GND
V2
V1
S4
R8
D4
R7
D2
R6
S2
R5
IN2
IN1
V3
V-
V+
NC
V1
8
7
HS-302RH/303RH/883S
HS-384RH/390RH/883S
V3
V-
V2
HS-306RH/307RH/883S
NOTES:
NOTES:
1. R1 - R8 = 10kΩ ± 5%, 1/4W
1. R1 - R8 = 10kΩ ± 5%, 1/4W
2. V1 = +15V ± 10%
2. V1 = +15V ± 10%
3. V2 = -15V ± 10%
3. V2 = -15V ± 10%
4. V3 = +5V ± 10%
4. V3 = +12V ± 10%
5. All irradiation testing is performed in the 14 pin package.
5. All irradiation testing is performed in the 14 pin package.
Burn-In Circuits
VA V-
V+
R
NC
1
14
C
2
13
3
12
R
D
R
R
R
1
16
2
15
3
14
V+
4
13
5
12
6
11
7
10
8
9
VA
-V
D
C
D
C
R
4
11
5
10
6
9
7
8
R
R
+V
VC
D
STATIC CONFIGURATION
HS-302RH/303RH/306RH/307RH/883S
STATIC CONFIGURATION
HS-384RH/390RH/883S
NOTES:
NOTES:
1. R = 10KΩ ± 5%, 1/4W (4 per position)
1. R = 10KΩ ± 5%, 1/4W (4 per position)
2. C = 0.01µF minimum (per position) or 0.1µF minimum per row
2. C = 0.01µF minimum (per position) or 0.1µF minimum per row
3. D = IN4002 (or equivalent)
3. D = IN4002 (or equivalent)
4. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V
4. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V
5. VA = +15.5V ± 0.5V for 306RH/307RH
5. VA = +5.5V ± 0.5V
6. VA = +5.5V ± 0.5V for 302RH/303RH
Spec Number
12
518526
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Burn-In Circuits
(Continued)
F V-
F V-
V+
NC
1
14
2
NC
V+
C
1
2
13
3
12
R
R
12
4
11
4
11
5
10
5
10
6
9
6
9
7
8
7
8
R
R
V-
D
R
3
R
V+
14
C
D
13
R
V+
R
VC
C
D
DYNAMIC CONFIGURATION
HS-302RH/303RH/883S
D
DYNAMIC CONFIGURATION
HS-306RH/307RH/883S
NOTES:
NOTES:
1. R = 10KΩ ± 5%, 1/4W (4 per position)
1. R = 10KΩ ± 5%, 1/4W (4 per position)
2. C = 0.01µF minimum (per position) or 0.1µF minimum per row
2. C = 0.01µF minimum (per position) or 0.1µF minimum per row
3. D = IN4002 (or equivalent)
3. D = IN4002 (or equivalent)
4. F = 100kHz square wave, 50% duty cycle,
VL = 0.8V max., VH = 5.5V ± 0.5V
4. F = 100kHz square wave, 50% duty cycle,
VL = 0.8V max., VH = 14V ± 1V
5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V
5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V
R
1
16
2
15
3
14
F
R
R
4
13
5
12
6
11
7
10
8
9
-V
D
C
D
C
+V
R
DYNAMIC CONFIGURATION
HS-384RH/390RH/883S
NOTES:
1. R = 10KΩ ± 5%, 1/4W (4 per position)
2. C = 0.01µF minimum (per position) or 0.1µF minimum per row
3. D = IN4002 (or equivalent)
4. F = 100kHz square wave, 50% duty cycle,
VL = 0.8V max., VH = +5.5V ±0.5V
5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V
Spec Number
13
518526
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Test Circuits
SWITCH TYPE
VINH
HS-302RH/303RH/384RH/390RH/883S
4V
HS-306RH/307RH/883S
15V
V+
+15V
LOGIC “1” = SWITCH ON
VO
VS = +3V
RL
300Ω
VINH
LOGIC INPUT
SWITCH
OUTPUT
50%
VS
LOGIC
INPUT
V-15V
GND
50%
0V
90%
10%
0V
tON
SWITCH OUTPUT
tOFF
FIGURE 1. SWITCHING TEST CIRCUIT (tON, tOFF)
SWITCH TYPE
VINH
HS-303RH/390RH/883S
5V
HS-307RH/883S
15V
LOGIC “1” =
SWITCH ON
V+
+15V
D1
VS1 = +3V
LOGIC INPUT
0V
OUT 1
D2
VS2 = +3V
RL1 = RL2 = 300Ω
VINH
OUT 2
RL2
LOGIC
INPUT
RL1
0V
V-15V
GND
50%
0V
SWITCH OUTPUT
50%
OUT 1
OUT 2
50%
50%
tBBM
tBBM
FIGURE 2. BREAK-BEFORE-MAKE TEST CIRCUIT (tBBM)
VA
VB
D
S
ID(OFF)
10mA
±
±
±10V
ID(ON)
RON =
VB - VA
± 10mA
FIGURE 3. ON RESISTANCE TEST
CIRCUIT (RON)
IS(OFF)
D
A
S
A
±14V
14V
A
±14V
FIGURE 4. ON LEAKAGE CURRENT
TEST CIRCUIT (IDON)
FIGURE 5. OFF LEAKAGE CURRENT
TEST CIRCUIT (ISOFF,
IDOFF)
Spec Number
14
518526
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Metallization Topology
WORST CASE CURRENT DENSITY: 1.732e05 A/cm2
DIE DIMENSIONS:
Die Size: 2130 x 1930µm
Die Thickness: 11 ±1 mils
SUBSTRATE POTENTIAL: Unbiased
PROCESS: DI Linear Metal Gate CMOS
METALLIZATION:
Type: Al, 12.5kÅ ± 2kÅ
Back: Gold
GLASSIVATION:
Type: SiO2
Thickness: 8kÅ ± 1kÅ
Metallization Mask Layout
S4
V+
S3
HS-302RH/303RH/306RH/307RH/883S
D1
D2
S1
S2
IN1
IN2
NC
V-
D4
GND
D3
IN1
S1
D1
D3
HS-384RH/390RH/883S
S3
VGND
S4
IN2
S2
D2
D4
V+
Spec Number
15
518526
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Spec Number
16
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