CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Package Type : 440166 and 440196 PN: CGH3501 5F and CGH35 015P Typical Performance Over 3.3-3.8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.3 GHz 3.4 GHz 3.5 GHz 3.6 GHz 3.7 GHz 3.8 GHz Units Small Signal Gain 13.6 12.8 12.3 12.2 12.3 12.8 dB EVM at PAVE = 24 dBm 2.71 2.31 2.1 2.12 2.54 3.04 dBm EVM at PAVE = 33 dBm 2.63 2.29 1.93 1.70 1.70 2.14 dBm Drain Efficiency at PAVE = 33 dBm 24.0 25.5 26.1 25.6 23.8 2.38 % Note: Measured in the CGH35015F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Features 3.3 - 3.9 GHz Operation • 15 W Peak Power Capability • 12 dB Small Signal Gain • 2.0 W PAVE at < 2.0 % EVM • 26 % Efficiency at 2 W Average Power • WiMAX Fixed Access 802.16-2004 OFDM • WiMAX Mobile Access 802.16e OFDMA 15 Rev 4.0 – May 20 • Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 84 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 7 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 4.0 mA 25˚C Maximum Drain Current1 IDMAX 1.5 A 25˚C Soldering Temperature TS 245 ˚C Screw Torque τ 60 in-oz RθJC 8.0 ˚C/W TC -40, +150 ˚C 2 Thermal Resistance, Junction to Case3 Case Operating Temperature3 85˚C Note: Current limit for long term, reliable operation. Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH35015F at PDISS = 7 W. 1 2 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 3.6 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 60 mA Saturated Drain Current IDS 2.9 3.5 – A VDS = 6.0 V, VGS = 2.0 V V(BR)DSS 120 – – VDC VGS = -8 V, ID = 3.6 mA DC Characteristics1 Drain-Source Breakdown Voltage RF Characteristics 2,3 (TC = 25˚C, F0 = 3.5 GHz unless otherwise noted) Small Signal Gain GSS 10.5 12 – dB VDD = 28 V, IDQ = 100 mA η 22 26 – % VDD = 28 V, IDQ = 100 mA, PAVE = 2.0 W Back-Off Error Vector Magnitude EVM1 – 2.5 – % VDD = 28 V, IDQ = 100 mA, PAVE = 18 dBm Error Vector Magnitude EVM2 – 2.5 – % VDD = 28 V, IDQ = 100 mA, PAVE = 2.0 W Output Mismatch Stress VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 100 mA, PAVE = 2.0 W Input Capacitance CGS – 4.5 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 1.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.2 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 Dynamic Characteristics Notes: Measured on wafer prior to packaging. Measured in the CGH35015F-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 4 Drain Efficiency = POUT / PDC. 1 2 Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH35015 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WiMAX Performance Figure 1.- Small Signal S-Parameters vs Frequency measured in the CGH35015F-AMP VDD = 28 V, IDQ = 100 mA 16 6 3 12 0 10 -3 8 -6 6 -9 S11 (dB) S21 (dB) S21 14 -12 4 S11 S21 2 -15 S11 0 -18 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 Frequency (GHz) Figure 2.- Typical EVM and Efficiency versus Frequency measured in the CGH35015F-AMP VDD = 28 V, IDQ = 100 mA, OFDM, PAR=9.8 dB EVM and 802.16-2004 Efficiency vs. Freq. 6.0 30% 5.0 25% Drain Efficiency 3.0 15% EVM @ 24 dBm 2.0 Efficiency 20% EVM (%) 4.0 10% EVM @ 33 dBm EVM @ 24dBm 1.0 5% EVM @ 33dBm Eff. @ 33dBm 0.0 0% 3.3 3.4 3.4 3.5 3.5 3.6 3.6 3.7 3.7 3.8 3.8 Frequency (GHz) Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH35015 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WiMAX Performance Figure 3.- Drain Efficiency and Gain vs Output Power measured in the CGH35015F-AMP VDD = 28 V, IDQ = 100 mA, 802.16-2004 OFDM, PAR = 9.8 dB 16 32% 14 28% 24% 10 20% 8 16% Efficiency 6 12% 4 8% Gain 2 Drain Efficiency Gain (dB) Gain 12 4% Drain Efficiency 0 0% 16 18 20 22 24 26 28 30 32 34 Output Power (dBm) Figure 4.- Typical EVM and Efficiency versus Power Output measured in the CGH35015F-AMP VDD = 28 V, IDQ = 100 mA, 802.16-2004 OFDM, PAR=9.8 dB 30% 5.0 4.5 27% EVM 4.0 24% Efficiency 21% 3.5 Efficiency 18% 2.5 15% 2.0 12% 1.5 9% EVM 1.0 Efficiency EVM (%) 3.0 6% 0.5 3% 0.0 0% 16 18 20 22 24 26 Output Power (dBm) 28 30 32 34 Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH35015 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance K Factor MAG (dB) Figure 5.- Simulated Maximum Available Gain and K Factor of the CGH35015 = 28 V, IDQ = 100atmA GMAX and KVof Idq of 100mA DD CGH35015F Typical Noise Performance Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH35015 Rev 4.0 Noise Resistance (Ohms) Minimum Noise Figure (dB) Figure 6.- Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH35015 VDD = 28 V, IDQ = 100 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 3300 13.0 - j5.6 13.2 - j2.8 3400 17.2 - j6.0 13.2 - j2.8 3500 20.8 - j9.9 13.1 - j2.9 3600 20.1 - j15.8 13.1 - j3.3 3700 15.7 - j19.0 12.3 - j3.8 Note 1. VDD = 28V, IDQ = 115 mA in the 440166 package. Note 2. Impedances are extracted from the CGH35015F-AMP demonstration amplifier and are not source and load pull data derived from the transistor. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH35015 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH35015F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1,C2 CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S 2 C10,C11 CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S 2 C4,C12 CAP, 10.0pF, +/-5%, 0603, ATC 600S 1 C5,C13 CAP, 39 PF±5%, 0603, ATC 600S 2 C14 CAP, 100 PF±5%, 0603, ATC 600S 1 C6 CAP, 470 PF ±10%,100 V, 0603 1 C7,C15 CAP, 33000PF, 100V, 0805, X7R 2 C8 CAP, 10UF, 16V, SMT, TANTALUM (240096) 1 C16 CAP, 1.0UF ±10%, 100V, 1210, X7R 1 C17 CAP, 33UF, 100V, ELECT, FK, SMD 1 R3 RES, 1/16W, 0603, 22 Ohms ≤5% 1 R4 RES, 1/16W, 0603, 100 Ohms ≤5% 1 J1 5-PIN, MOLEX, MALE, CONNECTOR 1 J2 2-PIN, MOLEX, MALE, CONNECTOR 1 SMA, FEMALE, CONNECTOR 2 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH35015F or CGH35015P 1 J3,J4 CGH35015F-AMP Demonstration Amplifier Circuit Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH35015 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH35015-AMP Demonstration Amplifier Circuit Schematic CGH35015-AMP Demonstration Amplifier Circuit Outline Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH35015 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH35015 (Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.909 -124.41 17.41 107.81 0.026 21.06 0.335 -93.73 600 MHz 0.902 -134.04 15.04 101.48 0.027 15.39 0.322 -101.61 700 MHz 0.898 -141.62 13.18 96.16 0.028 10.74 0.315 -107.78 800 MHz 0.894 -147.78 11.71 91.54 0.028 6.79 0.312 -112.73 900 MHz 0.892 -152.91 10.51 87.43 0.028 3.35 0.312 -116.77 1.0 GHz 0.890 -157.30 9.53 83.68 0.028 0.28 0.314 -120.15 1.1 GHz 0.889 -161.12 8.71 80.20 0.028 -2.51 0.318 -123.04 1.2 GHz 0.889 -164.51 8.01 76.95 0.028 -5.07 0.322 -125.57 1.3 GHz 0.888 -167.56 7.41 73.86 0.028 -7.45 0.328 -127.82 1.4 GHz 0.888 -170.34 6.89 70.91 0.028 -9.69 0.335 -129.87 1.5 GHz 0.888 -172.91 6.44 68.07 0.028 -11.81 0.342 -131.77 1.6 GHz 0.888 -175.30 6.04 65.32 0.028 -13.82 0.349 -133.56 1.7 GHz 0.888 -177.55 5.69 62.65 0.027 -15.74 0.357 -135.25 1.8 GHz 0.888 -179.68 5.37 60.05 0.027 -17.58 0.364 -136.89 1.9 GHz 0.888 178.29 5.09 57.50 0.027 -19.34 0.373 -138.48 2.0 GHz 0.888 176.34 4.83 55.01 0.027 -21.04 0.381 -140.03 2.1 GHz 0.889 174.45 4.60 52.56 0.026 -22.69 0.389 -141.55 2.2 GHz 0.889 172.63 4.39 50.14 0.026 -24.27 0.397 -143.06 2.3 GHz 0.889 170.84 4.20 47.76 0.026 -25.80 0.405 -144.56 2.4 GHz 0.889 169.10 4.02 45.41 0.025 -27.28 0.413 -146.04 2.5 GHz 0.890 167.39 3.86 43.09 0.025 -28.70 0.421 -147.52 2.6 GHz 0.890 165.71 3.71 40.79 0.025 -30.08 0.429 -149.00 2.7 GHz 0.891 164.04 3.57 38.51 0.024 -31.41 0.437 -150.48 2.8 GHz 0.891 162.39 3.44 36.26 0.024 -32.69 0.445 -151.95 2.9 GHz 0.891 160.76 3.32 34.01 0.024 -33.92 0.452 -153.43 3.0 GHz 0.892 159.13 3.21 31.79 0.023 -35.10 0.459 -154.92 3.2 GHz 0.892 155.89 3.00 27.38 0.023 -37.31 0.473 -157.90 3.4 GHz 0.893 152.65 2.83 23.00 0.022 -39.32 0.486 -160.90 3.6 GHz 0.893 149.39 2.67 18.66 0.021 -41.09 0.499 -163.93 3.8 GHz 0.894 146.09 2.54 14.34 0.020 -42.63 0.510 -166.99 4.0 GHz 0.894 142.74 2.41 10.02 0.020 -43.90 0.521 -170.10 4.2 GHz 0.895 139.33 2.31 5.70 0.019 -44.88 0.530 -173.24 4.4 GHz 0.895 135.84 2.21 1.37 0.018 -45.53 0.539 -176.45 4.6 GHz 0.895 132.26 2.12 -2.98 0.018 -45.84 0.547 -179.71 4.8 GHz 0.895 128.59 2.04 -7.36 0.017 -45.78 0.554 176.97 5.0 GHz 0.895 124.80 1.97 -11.79 0.016 -45.32 0.561 173.56 5.2 GHz 0.895 120.90 1.91 -16.27 0.016 -44.47 0.566 170.07 5.4 GHz 0.895 116.87 1.85 -20.81 0.016 -43.25 0.571 166.48 5.6 GHz 0.895 112.70 1.80 -25.41 0.015 -41.72 0.575 162.78 5.8 GHz 0.895 108.38 1.75 -30.10 0.015 -39.97 0.579 158.96 6.0 GHz 0.895 103.92 1.70 -34.88 0.016 -38.13 0.581 155.00 To download the s-parameters in s2p format, go to the CGH35015 Product Page and click on the documentation tab. Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH35015 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH35015F (Package Type — 440166) Product Dimensions CGH35015P (Package Type — 440196) Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH35015 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH35015F GaN HEMT Each CGH35015P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH35015-TB CGH35015F-AMP Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH35015 Rev 4.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH35015 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf