AUTOMOTIVE GRADE
AUIRF7749L2TR
Automotive DirectFET® Power MOSFET
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
60V
1.1m
1.5m
345A
183nC
S
S
S
D
G
S
S
S
Applicable DirectFET® Outline and Substrate Outline
SB
SC
M2
D
S
S
DirectFET2 L-can
L8
M4
L4
L6
L8
Description
The AUIRF7749L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology
to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile. The DirectFET® package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7749L2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
Package Type
AUIRF7749L2
DirectFET®
Standard Pack
Form
Quantity
Tape and Reel
Orderable Part Number
AUIRF7749L2TR
4000
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package limit)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
60
345
243
36
375
1380
341
3.8
315
714
Units
V
A
W
mJ
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
A
mJ
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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AUIRF7749L2TR
Thermal Resistance
Symbol
RJA
RJA
RJA
RJ-Can
RJ-PCB
Parameter
Typ.
–––
12.5
20
–––
–––
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
Max.
40
–––
–––
0.44
0.5
2.3
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
–––
56
–––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
1.1
1.5
Static Drain-to-Source On-Resistance
RDS(on)
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
Gate Threshold Voltage Coefficient
––– -8.8 –––
VGS(th)/TJ
gfs
Forward Trans conductance
185
–––
–––
RG
Internal Gate Resistance
–––
1.5
–––
–––
–––
20
Drain-to-Source Leakage Current
IDSS
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Qg
Total Gate Charge
–––
183
275
Qgs1
Gate-to-Source Charge
–––
39
–––
Qgs2
Gate-to-Source Charge
–––
19
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
46
–––
Qgodr
Gate Charge Overdrive
–––
79
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
65
–––
Qoss
Output Charge
–––
119
–––
td(on)
Turn-On Delay Time
–––
29
–––
tr
Rise Time
–––
149
–––
td(off)
Turn-Off Delay Time
–––
72
–––
tf
Fall Time
–––
88
–––
Ciss
Input Capacitance
––– 10655 –––
Coss
Output Capacitance
––– 1627 –––
Crss
Reverse Transfer Capacitance
–––
680
–––
Coss eff.
Effective Output Capacitance
––– 1959 –––
Units
°C/W
W/°C
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 3.0mA
m VGS = 10V, ID = 120A
V
V = VGS, ID = 250µA
mV/°C DS
S VDS = 10V, ID = 120A
µA
nA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Units
nC
nC
ns
pF
Conditions
VDS = 30V
VGS = 10V
ID = 120A
VDS = 48V, VGS = 0V
VDD = 30V, VGS = 10V
ID = 120A
RG = 1.8
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 48V
Notes through are on page 11
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AUIRF7749L2TR
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
Typ.
Max.
–––
–––
345
–––
–––
1380
–––
–––
–––
–––
42
54
1.3
–––
–––
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 120A, VGS = 0V
IF = 120A, VDD = 30V
di/dt = 100A/µs
Notes through are on page 11
Surface mounted on 1 in.
square Cu board (still air).
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Mounted to a PCB with
small clip heatsink (still air)
© 2015 International Rectifier
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
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AUIRF7749L2TR
10000
10000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
4.5V
60µs PULSE WIDTH
Tj = 25°C
1000
1
BOTTOM
100
4.5V
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
8
T J = 25°C
ID = 120A
Typical RDS(on) ( m )
6.0
4.0
TJ = 125°C
2.0
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
6
4
2
TJ = 25°C
0.0
6
8
10
12
14
16
18
0
20
0
40
80
V GS, Gate -to -Source Voltage (V)
120
160
200
ID, Drain Current (A)
Fig. 3 Typical On-Resistance vs. Gate Voltage
Fig. 4 Typical On-Resistance vs. Drain Current
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
10000
V DS = 25V
ID, Drain-to-Source Current (A)
100
Fig. 2 Typical Output Characteristics
8.0
4
60µs PULSE WIDTH
1000
100
TJ = 25°C
TJ = 175°C
10
1
0.1
2.0
3.0
4.0
5.0
6.0
7.0
V GS, Gate-to-Source Voltage (V)
Fig 5. Transfer Characteristics
4
10
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance (m )
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
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1.8
ID = 120A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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AUIRF7749L2TR
10000
V GS(th) Gate threshold Voltage (V)
4.5
3.5
3.0
ID = 250µA
ID = 1.0mA
2.5
ID = 1.0A
2.0
1000
ISD, Reverse Drain Current (A)
4.0
TJ = 175°C
100
TJ = 25°C
10
1
V GS = 0V
1.5
0.1
-75 -50 -25
0
25
50
75
100 125 150 175
0.2
TJ , Temperature ( °C )
0.6
0.8
1.0
1.2
1.4
V SD, Source-to-Drain Voltage (V)
Fig. 7 Typical Threshold Voltage vs.
Fig 8. Typical Source-Drain Diode Forward Voltage
320
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
TJ = 25°C
C oss = C ds + C gd
240
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
0.4
TJ = 175°C
160
80
Ciss
Coss
10000
Crss
1000
V DS = 5.0V
380µs PULSE WIDTH
0
100
0
20
40
60
80 100 120 140 160 180
0.1
1
10
100
ID, Drain-to-Source Current (A)
V DS, Drain-to-Source Voltage (V)
Fig 9. Typical Forward Trans conductance vs. Drain Current
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
350
ID= 120A
300
VDS = 48V
12
ID , Drain Current (A)
VGS, Gate-to-Source Voltage (V)
16
VDS = 30V
VDS= 12V
8
4
200
150
100
50
0
0
40
80
120
160
200
240
QG Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
250
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0
25
50
75
100
125
150
175
TC , CaseTemperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
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AUIRF7749L2TR
EAS, Single Pulse Avalanche Energy (mJ)
1400
ID, Drain-to-Source Current (A)
1000
100µsec
100
1msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
I D
15A
35A
BOTTOM 120A
1200
TOP
1000
800
600
400
200
0
0.1
0.1
1
25
10
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
VDS , Drain-toSource Voltage (V)
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C. (Single Pulse)
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs. Pulse Width
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AUIRF7749L2TR
350
300
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 120A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
Fig 18a. Unclamped Inductive Test Circuit
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 18b. Unclamped Inductive Waveforms
VDD
Fig 19a. Gate Charge Test Circuit
Fig 20a. Switching Time Test Circuit
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Fig 19b. Gate Charge Waveform
Fig 20b. Switching Time Waveforms
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AUIRF7749L2TR
DirectFET® Board Footprint, L8 Outline
(Large Size Can, 8-Source Pads)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
S
S
S
S
G
D
D
S
S
S
S
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7749L2TR
DirectFET® Outline Dimension, L8 Outline
(Large Size Can, 8-Source Pads)
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®. This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
L1
M
P
R
METRIC
MIN MAX
9.05 9.15
6.85 7.10
5.90 6.00
0.55 0.65
0.58 0.62
1.18 1.22
0.98 1.02
0.73 0.77
0.38 0.42
1.35 1.45
2.55 2.65
5.35 5.45
0.68 0.74
0.09 0.17
0.02 0.08
IMPERIAL
MAX
MIN
0.360
0.356
0.280
0.270
0.236
0.232
0.026
0.022
0.024
0.023
0.048
0.046
0.039
0.040
0.029
0.030
0.015
0.017
0.053
0.057
0.100
0.104
0.211
0.215
0.027
0.029
0.003
0.007
0.001
0.003
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7749L2TR
DirectFET® Tape & Reel Dimension (Showing component orientation)
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as AUIRF7749L2TR).
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
IMPERIAL
METRIC
MIN
CODE
MAX
MIN
MAX
12.992
A
330.00
N.C
N.C
0.795
B
20.20
N.C
N.C
C
0.504
12.80
0.520
13.20
D
0.059
1.50
N.C
N.C
E
3.900
99.00 100.00
3.940
F
N.C
N.C
0.880
22.40
G
0.650
16.40
0.720
18.40
H
0.630
15.90
0.760
19.40
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
4.69
0.476
11.90
12.10
0.154
0.161
3.90
4.10
0.623
0.642
15.90
16.30
0.291
0.299
7.40
7.60
0.283
0.291
7.20
7.40
0.390
0.398
9.90
10.10
0.059
N.C
1.50
N.C
0.059
1.50
0.063
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7749L2TR
Qualification Information†
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Qualification Level
Moisture Sensitivity Level
DirectFET2 L-CAN
Machine Model
ESD
Human Body Model
MSL1
Class M4 (+/- 800V)
††
AEC-Q101-002
Class H2 (+/- 4000V)††
AEC-Q101-001
Yes
RoHS Compliant
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
Click on this section to link to the appropriate technical
paper.
Click on this section to link to the Direct FET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain)
of part.
Repetitive rating; pulse width limited by max. junction
temperature.
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Limited by TJmax, Starting TJ = 25°C, L = 0.044mH,
RG = 50, IAS = 120A.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large
heat sink.
Mounted on minimum footprint full size board with
metalized back and with small clip heat sink.
R is measured at TJ of approximately 90°C.
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AUIRF7749L2TR
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for
any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications.
Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring
military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will
not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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