IRF IRKTF81-08HN Fast thyristor/ diode and thyristor/ thyristor Datasheet

Bulletin I27103 rev. A 09/97
IRK.F82.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
INT-A-pakä Power Modules
Features
81 A
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V RMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
IRK.F82..
Units
81
A
90
°C
180
A
@ 50Hz
2200
A
@ 60Hz
2300
A
@ 50Hz
24.2
KA 2s
@ 60Hz
22.1
KA 2s
242
KA 2√s
10 and 15
µs
2
µs
I T(AV)
@ TC
I T(RMS)
I TSM
2
I t
I 2√t
tq
range
t rr
VDRM / V RRM
TJ
range
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up to 800
- 40 to 125
V
o
C
1
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IRK.F82..
Voltage
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/I DRM max.
Code
peak reverse voltage
repetitive peak rev. voltage
@ T J = 125°C
V
V
mA
04
400
400
08
800
800
30
Current Carrying Capacity
ITM
ITM
Frequency f
o
180 el
ITM
Units
100µs
180 el
o
50Hz
160
265
250
400
2240
3100
A
400Hz
200
320
290
475
1070
1550
A
2500Hz
150
240
260
400
370
550
A
5000Hz
135
215
235
355
235
355
A
10000Hz
90
160
190
275
-
-
A
Recovery voltage Vr
50
50
50
50
50
50
V
Voltage before turn-on Vd
80% VDRM
80% VDRM
80% VDRM
V
Rise of on-state current di/dt
50
50
-
-
-
-
A/µ s
Case temperature
90
60
90
60
90
60
°C
Equivalent values for RC circuit
22 Ω / 0.15 µF
22 Ω / 0.15 µF
22 Ω / 0.15 µF
On-state Conduction
Parameter
IT(AV)
IRK.F82..
Units Conditions
Maximum average on-state current
81
A
@ Case temperature
90
°C
180° conduction, half sine wave
IT(RMS) Maximum RMS current
180
A
TC = 90°C, as AC switch
ITSM
Maximum peak, one-cycle,
2200
A
t = 10ms
non-repetitive surge current
2300
t = 8.3ms
reapplied
1850
t = 10ms
100% VRRM
1950
I2 t
Maximum I2 t for fusing
24.2
KA2 s
Maximum I2 √t for fusing
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial TJ = 125°C
22.1
t = 8.3ms
reapplied
17.1
t = 10ms
100% VRRM
t = 8.3ms
reapplied
15.6
I2 √t
No voltage
242
VT(TO)1 Low level value of threshold voltage
1.20
VT(TO)2 High level value of threshold voltage
1.24
r t1
Low level value of on-state slope resistance
2.18
KA 2√s t = 0 to 10ms, no voltage reapplied
V
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
(I > π x I T(AV)), TJ = TJ max.
mW
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
(I > π x I T(AV)), TJ = TJ max.
r t2
High level value of on-state slope resistance
2.00
VTM
Maximum on-state voltage drop
1.96
V
IH
Maximum holding current
600
mA
TJ = 25°C, IT > 30 A
IL
Typical latching current
1000
mA
TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
2
Ipk = 350A, T J = T J max., tp = 10ms sine pulse
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Switching
Parameter
IRK.F82..
di/dt
Maximum non-repetitive rate of rise
trr
Maximum recovery time
tq
Maximum turn-off time
Units Conditions
800
A/µs
2
µs
Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM
T J = 25°C
N
L
10
15
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 350A, T J = 125°C, di/dt = -25A/µs,
µs
VR = 50V, dv/dt = 400V/µs linear to 80% V DRM
Blocking
Parameter
dv/dt
IRK.F82..
Maximum critical rate of rise of off-state
1000
Units Conditions
V/µs
TJ = 125°C., exponential to = 67% VDRM
3000
V
50 Hz, circuit to base, TJ = 25°C, t = 1 s
30
mA
voltage
VINS
RMS isolation voltage
IRRM
Maximum peak reverse and off-state
IDRM
leakage current
TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
IRK.F82..
Units Conditions
P GM
Maximum peak gate power
40
W
f = 50 Hz, d% = 50
P G(AV)
Maximum peak average gate power
2
W
TJ = 125°C, f = 50Hz, d% = 50
IGM
Maximum peak positive gate current
5
A
TJ = 125°C, tp < 5ms
- VGM
Maximum peak negative gate voltage
5
V
IGT
Max. DC gate current required to trigger
200
mA
V GT
DC gate voltage required to trigger
3
V
IGD
DC gate current not to trigger
20
mA
V GD
DC gate voltage not to trigger
0.25
V
TJ = 25°C, Vak 12V, Ra = 6
TJ = 125°C, rated VDRM applied
Thermal and Mechanical Specifications
Parameter
IRK.F82..
TJ
Max. junction operating temperature range
- 40 to 125
T stg
Max. storage temperature range
- 40 to 150
RthJC
Max. thermal resistance, junction to
Units Conditions
°C
0.25
K/W
Per junction, DC operation
0.035
K/W
Mounting surface flat and greased
case
RthC-hs Max. thermal resistance, case to
heatsink
T
Mounting torque ± 10%
wt
Approximate weight
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Per module
IAP to heatsink
4 - 6 (35 - 53)
busbar to IAP
4 - 6 (35 - 53)
500 (17.8)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
(lb*in)
not recommendd, busbars should be used and
restrained during tightening. Threads must be
g (oz) lubricated with a compound
Nm
3
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction
180°
0.016
0.011
120°
0.019
0.020
90°
0.024
0.026
60°
0.035
0.037
30°
0.060
0.060
Units
Conditions
K/W
TJ = 125°C
Ordering Information Table
Device Code
IRK
T
F
8
2
1
2
3
4
5
1
- Module type
2
- Circuit configuration
3
- Fast SCR
4
- Current rating: IT(AV) x 10 rounded
5
- 1=
2=
-
08
H
L
N
6
7
8
8
option with spacers and longer terminal screws
option with standard terminal screws
6
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
7
- dv/dt code: H ≤ 400V/µs
8
- tq code: N ≤ 10µs
L ≤ 15µs
9
- None = Standard devices
N
= Aluminum nitrade substrate
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate and
cathode wire: UL 1385
- UL identification number for package:
UL 94V0
For all types
A
B
C
D
E
IRK...1
25 (0.98)
----
----
41 (1.61)
47 (1.85)
IRK...2
23 (0.91)
30 (1.18)
36 (1.42)
----
----
IRKHF..
IRKLF..
IRKUF..
130
IRK.F82.. Series
R thJC (DC) = 0.25 K/W
120
110
Conduction Angle
100
90
30°
60°
90°
80
120°
180°
70
0
20
40
60
80
100
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
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IRKVF..
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
IRKTF..
IRKKF..
130
IRKNF..
IRK.F82.. Series
R thJC (DC) = 0.25 K/W
120
110
Conduction Period
100
30°
90
60°
90°
80
120°
180°
DC
70
0
20
40
60
80
100
120
140
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
5
IRK.F82.. Series
180°
120°
90°
60°
30°
120
100
80
RMS Limit
60
Conduction Angle
40
IRK.F82.. Series
Per Junction
T J = 125°C
20
0
0
10
20
30
40
50
60
70
80
90
Maximum Average On-state Power Loss (W)
140
200
DC
180°
120°
90°
60°
30°
180
160
140
120
100
RMS Limit
80
Conduction Period
60
IRK.F82.. Series
Per Junction
T J = 125°C
40
20
0
0
20
80
100
120
140
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
2000
At Any Rated Load Condition And With
Rated V RRMApplied Following Surge.
Initial T J = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1900
1800
1700
1600
1500
1400
1300
1200
1100
IRK.F82.. Series
Per Junction
1000
900
10
100
2200
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J = 125°C
No Voltage Reapplied
Rated VRRMReapplied
2000
1800
1600
1400
1200
1000
IRK.F82.. Series
Per Junction
800
0.01
Number Of Equal Amplitude Half Cycle Curre nt Pulses (N)
T J = 25°C
T J = 125°C
1000
IRK.F82.. Series
Per Junction
100
1
2
3
4
5
6
7
8
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Transient Thermal Impedance Z thJC(K/W)
10000
0.1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
60
Average On-state Current (A)
1
6
40
Average On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Max imum Average On-state Power Loss (W)
Bulletin I27103 rev. A 09/97
1
Steady State Value
R thJC= 0.25 K/W
(DC Operation)
0.1
0.01
IRK.F82.. Series
Per Junction
0.001
0.001
0.01
0.1
1
10
100
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
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IRK.F82.. Series
160
IRK.F82.. Series
T J = 125 °C
140
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Charge - Qrr (µC)
Bulletin I27103 rev. A 09/97
ITM = 500 A
300 A
120
200 A
100
100 A
80
60
50 A
40
20
10
20
30
40
50
60
70
80
90 100
120
110
I TM = 500 A
IRK.82.. Series
T J= 125 °C
100
300 A
90
200 A
80
100 A
70
50 A
60
50
40
30
20
10
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 9 - Reverse Recovery Charge Characteristic
Fig. 10 - Reverse Recovery Current Characteristic
Peak On-state Current (A)
1E4
Snubber circuit
R s = 22 ohms
C s = 0.15 µF
V D = 80% V DRM
IRK.F82.. Series
Sinusoidal Pulse
T C = 60 °C
tp
1E3
1000
400
tp
Snubber circuit
R s = 22 ohms
C s = 0.15 µF
V D = 80% V DRM
IRK.F82.. Series
Sinusoidal Pulse
T C = 90 °C
50 Hz
150
2500
1000
400
150
50 Hz
2500
5000
5000
1E2
1E1
1E2
1E3
1E4 E1
1E4
1E1
1E2
Pulse Basewidth (µs)
1E3
1E4
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
Peak On-state Current (A)
1E4
Snubber circuit
R s = 22 ohms
C s = 0.15 µF
V D = 80% V DRM
IRK.F82.. Series
Trapezoidal Pulse
T C = 60 °C, di/dt 50A/µs
tp
tp
Snubber circuit
R s = 22 ohms
C s = 0.15 µF
V D = 80% V DRM
IRK.F82.. Series
Trapezoidal Pulse
T = 60 °C, di/dt 100A/µs
C
50 Hz
1E3
50 Hz
150
150
400
1000
1000
2500
2500
5000
1E2
1E1
400
5000
1E2
1E3
1E4
1E1
1E41E1
Pulse Basewidth (µs)
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
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7
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Peak On-state Current (A)
1E4
tp
Snubber circuit
R s = 22 ohms
C s = 0.15 µF
V D = 80% V DRM
IRK.F82.. Series
Trapezoidal Pulse
T C = 90 °C, di/dt 50A/µs
1E3
Snubber circuit
R s = 22 ohms
C s = 0.15 µF
V D = 80% V DRM
IRK.F 82.. Series
Trapezoidal Pulse
T C = 90 °C, di/dt 100A/µs
tp
50 Hz
150
400
1000
150
400
1000
2500
50 Hz
2500
5000
5000
1E2
1E1
1E2
1E4
1E41E1
1E1
1E3
1E2
Pulse Basewidth (µs)
1E3
1E4
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
1E4
0.5
0.25
0.1
1E3
5
1
1
2.5
5
10 joules per pulse
0.5
0.25
0.1
0.05
0.05
0.01
1E2
tp
IRK.F82.. Series
Sinusoidal pulse
1E1
1E1
IRK.F82.. Series
Trapezoidal Pulse
di/dt 50A/µs
tp
1E2
1E3
1E4 1E1
1E1
1E4
1E2
Pulse Basewidth (µs)
1E3
1E4
Pulse Basewidth (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20 V, 10 ohms tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10 V, 10 ohms
10
tr<=1 µs
(a)
(b)
VGD
IGD
0.1
0.01
(1)
IRK.F82.. Series
0.1
(1) PGM = 10W, tp = 10ms
(2) PGM = 20W, tp = 5ms
(3) PGM = 40W, tp = 2.5ms
Tj=-40 °C
1
Tj=25 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
Peak On-state Current (A)
10 joules per pulse
2.5
(2)
(3)
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
8
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