IRF IRFH5104PBF Secondary side synchronous rectification Datasheet

IRFH5104PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
40
V
3.5
mΩ
53
1.4
nC
100
(@Tc(Bottom) = 25°C)
Ω
h
A
PQFN 5X6 mm
Applications
•
•
•
•
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (≤ 3.5mΩ)
Low Thermal Resistance to PCB (≤ 1.1°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
results in
Industry-Standard Pinout
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRFH5104TRPBF
IRFH5104TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
1000
Note
EOL notice #259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
g
Max.
40
±20
24
19
100
86
400
3.6
114
Units
0.029
-55 to + 150
W/°C
h
c
g
V
A
W
°C
Notes  through † are on page 8
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 6, 2014
IRFH5104PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
∆VGS(th)
IDSS
IGSS
Output Charge
Min.
40
–––
–––
2.0
–––
–––
–––
–––
–––
56
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.05
2.9
–––
-8.9
–––
–––
–––
–––
–––
53
10
4.8
19
19.2
23.8
22
Conditions
Max. Units
–––
V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
3.5
mΩ VGS = 10V, ID = 50A
4.0
V
VDS = VGS, ID = 100µA
––– mV/°C
VDS = 40V, VGS = 0V
20
µA
VDS = 40V, VGS = 0V, TJ = 125°C
250
VGS = 20V
100
nA
-100
VGS = -20V
–––
S VDS = 15V, ID = 50A
80
–––
VDS = 20V
VGS = 10V
–––
nC
–––
ID = 50A
–––
See Fig.17 & 18
–––
–––
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
1.4
9.5
15
20
10
3120
650
310
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
e
Ω
ns
pF
VDD = 20V, VGS = 10V
ID = 50A
RG=1.7Ω
See Fig.15
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
Diode Characteristics
c
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
IS
ISM
VSD
trr
Qrr
ton
Typ.
–––
–––
d
Units
mJ
A
Max.
120
50
Min.
Typ.
Max. Units
h
–––
–––
100
c
–––
–––
400
A
Conditions
MOSFET symbol
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 50A, VGS = 0V
TJ = 25°C, IF = 50A, VDD = 20V
di/dt = 500A/µs
–––
–––
1.3
V
–––
31
47
ns
–––
130
195
nC
Time is dominated by parasitic Inductance
e
S
e
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
2
f
f
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Parameter
g
g
www.irf.com © 2014 International Rectifier
Typ.
–––
–––
–––
–––
Submit Datasheet Feedback
Max.
1.1
15
35
22
Units
°C/W
January 6, 2014
IRFH5104PbF
1000
1000
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
1
≤60µs PULSE WIDTH
Tj = 25°C
BOTTOM
10
4.5V
≤60µs PULSE WIDTH
Tj = 150°C
4.5V
0.1
0.1
1
1
10
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
100
1000
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
100
T J = 150°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
ID = 50A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
3
4
5
6
7
8
9
10
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics
100000
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 50A
C oss = C ds + C gd
10000
Ciss
Coss
1000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Crss
12.0
VDS= 32V
VDS= 20V
10.0
VDS= 8.0V
8.0
6.0
4.0
2.0
0.0
100
1
10
0
100
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com © 2014 International Rectifier
10
20
30
40
50
60
70
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
3
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Submit Datasheet Feedback
January 6, 2014
IRFH5104PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 150°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
100
10msec
10
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
1.0
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
VSD, Source-to-Drain Voltage (V)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
150
5.0
VGS(th) , Gate threshold Voltage (V)
Limited By Package
125
ID, Drain Current (A)
DC
100
75
50
25
0
4.5
4.0
3.5
3.0
ID = 100µA
ID = 500µA
2.5
ID = 1.0mA
ID = 1.0A
2.0
1.5
25
50
75
100
125
150
-75 -50 -25
T C , Case Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 6, 2014
10
500
ID = 50A
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRFH5104PbF
8
6
T J = 125°C
4
2
T J = 25°C
0
ID
8.3A
19A
BOTTOM 50A
TOP
400
300
200
100
0
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
D.U.T.
+
-VDD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 15a. Switching Time Test Circuit
5
I AS
0.01Ω
tp
www.irf.com © 2014 International Rectifier
10%
VGS
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
Submit Datasheet Feedback
January 6, 2014
IRFH5104PbF
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Fig 17. Gate Charge Test Circuit
6
www.irf.com © 2014 International Rectifier
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Submit Datasheet Feedback
January 6, 2014
IRFH5104PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 6, 2014
IRFH5104PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Indus trial
Qualification level
(per JE DE C JE S D47F
Moisture Sensitivity Level
PQFN 5mm x 6mm
RoHS compliant
†
††
†††
††
†††
guidelines )
MS L1
†††
(per JE DE C J-S T D-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.098mH, RG = 25Ω, IAS = 50A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
† Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test
capability.
Revision History
Date
Comment
12/16/2013
• Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
• Updated data sheet with the new IR corporate template.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 6, 2014
Similar pages