CYStech Electronics Corp. Spec. No. : C240T3 Issued Date : 2017.04.05 Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB772AT3 Features • Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Pb-free lead plating package Symbol Outline TO-126 BTB772AT3 B：Base C：Collector E：Emitter E C B Ordering Information Device BTB772AT3-0-BL-X BTB772AT3-0-UC-X Package TO-126 (Pb-free lead plating and halogen-free package) Shipping 200 pcs / bag, 3,000 pcs/box 30,000 pcs/carton 60 pcs/ tube, 32 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton ; UC : tube, 60 pcs/tube, 32 tubes/box Product rank, zero for no rank products Product name BTB772AT3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C240T3 Issued Date : 2017.04.05 Revised Date : Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25°C VCBO VCEO VEBO IC ICP PD Power Dissipation @TC=25°C Operating Junction and Storage Temperature Range Limits Unit -50 -30 -7 -3 -5 (Note 1) 1 Tj ; Tstg 10 -55~+150 Symbol RθJC RθJA Value 12.5 125 V V V A A W W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Unit °C/W °C/W Note : 1. Single Pulse , Pw=10ms Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. -50 -30 -7 160 180 150 - Typ. -0.05 -0.2 -1 190 33 Max. -100 -100 -0.2 -0.3 -1.2 390 - Unit V V V nA nA V V V MHz pF Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-50V, IE=0 VEB=-7V, IC=0 IC=-400mA, IB=-20mA IC=-2A, IB=-100mA IC=-2A, IB=-200mA VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA VCE=-2V, IC=-1A VCE=-10V, IC=-0.5A, f=100MHz VCB=-10V, f =1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% BTB772AT3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C240T3 Issued Date : 2017.04.05 Revised Date : Page No. : 3/7 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 1.4 1mA 0.25 1.2 -IC, Collector Current(A) -IC, Collector Current(A) 0.3 0.2 0.15 500uA 400uA 300uA 0.1 0.05 200uA -IB=100uA 5mA 1 0.8 0.6 2.5mA 2mA 1.5mA 0.4 0.2 0 -IB=500uA 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 0 6 Emitter Grounded Output Characteristics 6 3.5 50mA -IC, Collector Current(A) 20mA 3 2.5 2 8mA 6mA 1.5 1 4mA 5 4 25mA 20mA 3 15mA 10mA 2 -IB=5mA 1 -IB=2mA 0.5 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 0 6 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 6 Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=-1V VCE=-2V Current Gain---HFE Current Gain---HFE 6 Emitter Grounded Output Characteristics 4 -IC, Collector Current(A) 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) Ta=125°C Ta= 75°C Ta= 25°C Ta=0°C Ta=-40°C 100 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 1 BTB772AT3 10 100 1000 -IC, Collector Current(mA) 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C240T3 Issued Date : 2017.04.05 Revised Date : Page No. : 4/7 Typical Characteristics(Cont.) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT@IC=50IB Saturation Voltage---(mV) Current Gain---HFE VCE=-5V 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 1 10 100 1000 -IC, Collector Current(mA) 10000 1 10 10000 10000 On Voltage---(mV) 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 10 100 1000 -IC, Collector CurrentmA) 1000 100 100 1 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C VBEON@VCE=-1V VBESAT@IC=50IB Saturation Voltage---(mV) 10000 On Voltage vs Collector Current Saturation Voltage vs Collector Current 1 10000 10 100 1000 -IC, Collector Current(mA) 10000 Cutoff Frequency vs Collector Current Capacitance vs Reverse-biased Voltage 1000 Cutoff Frequency---fT(MHz) 1000 Capacitance---(pF) 100 1000 -IC, Collector Current(mA) Cib 100 Cob VCE=-2V 100 10 10 0.1 BTB772AT3 1 10 -VR, Reverse-biased Voltage(V) 100 1 10 100 -IC, Collector Current(mA) 1000 CYStek Product Specification Spec. No. : C240T3 Issued Date : 2017.04.05 Revised Date : Page No. : 5/7 CYStech Electronics Corp. Typical Characteristics(Cont.) Power Derating Curve 1.2 12 1 10 PD, Power Dissipation(W) PD, Power Dissipation(W) Power Derating Curve 0.8 0.6 0.4 0.2 8 6 4 2 0 0 0 25 50 75 100 125 TA, Ambient Temperature(℃) BTB772AT3 150 175 0 25 50 75 100 125 150 175 TC, Case Temperature(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C240T3 Issued Date : 2017.04.05 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB772AT3 CYStek Product Specification Spec. No. : C240T3 Issued Date : 2017.04.05 Revised Date : Page No. : 7/7 CYStech Electronics Corp. TO-126 Dimension Marking: Device Code B772A □□ 1 2 Date Code 3 Date Code : Year Code + Month Code Year Code : 2011→1, 2012→2,…, 2020→0, 2021→1, 2022→2, …, etc Month Code : Jan →1, Feb → 2,…, Sep→9, Oct→A, Nov→B, Dec→C Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126 Plastic Package CYStek Package Code: T3 *: Typical Millimeters Min. Max. 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 DIM A A1 b b1 c D E Inches Min. Max. 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 DIM e e1 h L L1 P Φ Millimeters Min. Max. *2.290 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 Inches Min. Max. *0.090 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB772AT3 CYStek Product Specification