GeneSiC MSRTA300100AD Silicon standard recovery diode Datasheet

MSRTA30060(A)D thru MSRTA300100(A)D
Silicon Standard
Recovery Diode
VRRM = 600 V - 1000 V
IF(AV) = 300 A
Features
• High Surge Capability
• Types from 600 V to 1000 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
Conditions
MSRTA30060(A)D MSRTA30080(A)D MSRTA300100(A)D
Unit
600
800
1000
V
600
55 to 150
50
-55
-55 to 150
800
-55
55 to 150
50
-55 to 150
1000
-55
55 to 150
50
-55 to 150
V
°C
C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
MSRTA30060(A)D MSRTA30080(A)D MSRTA300100(A)D
Symbol
Conditions
Average forward current (per
leg)
IF(AV)
TC = 125 °C
300
300
300
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
3800
3800
3800
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 300 A, Tj = 25 °C
1.1
1.1
1.1
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
20
20
20
μA
Tj = 150 °C
10
10
10
mA
0.28
0.28
0.28
°C/W
Parameter
Unit
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘjc
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
MSRTA30060(A)D thru MSRTA300100(A)D
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
MSRTA30060(A)D thru MSRTA300100(A)D
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
Similar pages