CYSTEKEC MTC4503LQ8 N- and p-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2015.01.06
Revised Date :
Page No. : 1/10
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC4503LQ8
Description
The MTC4503LQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Applications
• Power management in notebook computer, portable equipment and battery powered systems.
Equivalent Circuit
MTC4503LQ8
Outline
SOP-8
G:Gate
S:Source
D:Drain
MTC4503LQ8
CYStek Product Specification
Spec. No. : C384Q8
Issued Date : 2015.01.06
Revised Date :
Page No. : 2/10
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Limits
N-channel
P-channel
30
-30
Unit
V
Gate-Source Voltage
VGS
±20
±20
V
Continuous Drain Current @TA=25 °C (Note 1)
ID
6.9
-6.3
A
Continuous Drain Current @TA=70 °C (Note 1)
ID
5.5
-5.0
A
Pulsed Drain Current (Note 2)
IDM
30
-30
A
Single Avalanche Current
IAS
6.9
-6.3
A
Total Power Dissipation @TA=25°C (Note 1)
Linear Derating Factor
Pd
2
W
0.016
W / °C
Tj; Tstg
-55~+150
°C
Thermal Resistance, Junction-to-Case
RθJC
25
°C/W
Thermal Resistance, Junction-to-Ambient (Note 1)
RθJA
62.5
°C/W
Operating Junction and Storage Temperature Range
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
30
1.0
-
0.005
5.7
2.5
±100
1
25
28
42
-
V
V/°C
V
nA
μA
μA
-
610
160
120
8
7
19
6
9
2
6
970
15
-
-
0.88
18
-
11
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VF(S-D)
*trr
*Qrr
S
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=30V, VGS=0
VDS=24V, VGS=0, Tj=70°C
ID=6A, VGS=10V
ID=4A, VGS=4.5V
VDS=10V, ID=6A
pF
VDS=25V, VGS=0, f=1MHz
ns
VDS=15V, ID=1A,
VGS=10V, RG=3.3Ω, RD=15Ω
nC
VDS=24V, ID=6A, VGS=4.5V
1.2
-
V
ns
VGS=0V, IF=6.9A
-
nC
mΩ
IF=6.9A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC4503LQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2015.01.06
Revised Date :
Page No. : 3/10
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
-30
-0.8
-
-0.004
5.8
-1.5
±100
-1
-25
36
55
-
V
V/°C
V
nA
μA
μA
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VF(S-D)
*trr
-
960
300
220
12
8
42
34
15
3
9
1540
24
-
ns
ns
ns
ns
nC
nC
nC
-
0.89
24
1.2
-
V
ns
*Qrr
-
18
-
nC
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
*GFS
S
VGS=0, ID=-250μA
Reference to 25°C, ID=-1mA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-30V, VGS=0
VDS=-24V, VGS=0, Tj=70°C
ID=-6A, VGS=-10V
ID=-4A, VGS=-4.5V
VDS=-10V, ID=-6A
pF
VDS=-25V, VGS=0, f=1MHz
mΩ
Dynamic
VDS=-15V, ID=-1A,
VGS=-10V, RG=3.3Ω, RD=15Ω
VDS=-24V, ID=-6A, VGS=-4.5V
VGS=0V, IF=6.3A
IF=6.3A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTC4503LQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTC4503LQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2015.01.06
Revised Date :
Page No. : 4/10
N-channel Characteristic Curves
MTC4503LQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2015.01.06
Revised Date :
Page No. : 5/10
N-channel Characteristic Curves(Cont.)
MTC4503LQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2015.01.06
Revised Date :
Page No. : 6/10
P-channel Characteristic Curves
MTC4503LQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2015.01.06
Revised Date :
Page No. : 7/10
P-channel Characteristic Curves(Cont.)
MTC4503LQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2015.01.06
Revised Date :
Page No. : 8/10
Reel Dimension
Carrier Tape Dimension
MTC4503LQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2015.01.06
Revised Date :
Page No. : 9/10
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC4503LQ8
CYStek Product Specification
Spec. No. : C384Q8
Issued Date : 2015.01.06
Revised Date :
Page No. : 10/10
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
4503L
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC4503LQ8
CYStek Product Specification
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