Thinki F50UP30DN 50.0 ampere,300 volt common cathode fast recovery epitaxial diode Datasheet

F50UP30DN
®
Pb
F50UP30DN
Pb Free Plating Product
50.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode
TO-3PB/TO-3PN
APPLICATION
·
·
·
·
·
·
·
Cathode(Bottom Side Metal Heatsink)
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
· Soft Recovery Characteristics
Anode
Base Backside
· Low Recovery Loss
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
F50UP30DN using matured FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
Symbol
TC=25°C unless otherwise specified
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
300
V
VRRM
Maximum Repetitive Reverse Voltage
300
V
IF(AV)
Average Forward Current
TC=110°C, Per Diode
30
A
TC=110°C, Per Package
60
A
IF(RMS)
RMS Forward Current
TC=110°C, Per Diode
42
A
IFSM
Non-Repetitive Surge Forward Current
TJ=45°C, t=10ms, 50Hz, Sine
480
A
PD
Power Dissipation
156
W
TJ
Junction Temperature
-55to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
Torque
Module-to-Sink
Recommended(M3)
1.1
N·m
Rth(J-C)
Thermal Resistance
Junction-to-Case, Per Diode
0.8
°C /W
6
g
Weight
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
µA
VR=300V
--
--
10
VR=300V, TJ=125°C
--
--
10
mA
IF=30A
--
1.25
1.8
V
IF=30A, TJ=125°C
--
1.12
--
V
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs
--
22
--
ns
trr
Reverse Recovery Time
VR=150V, IF=30A
--
35
--
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-200A/μs, TJ=25°C
--
2.5
--
A
trr
Reverse Recovery Time
VR=150V, IF=30A
--
70
--
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-200A/μs, TJ=125°C
--
6.8
--
A
IRM
Reverse Leakage Current
VF
Forward Voltage
trr
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/3
http://www.thinkisemi.com/
F50UP30DN
®
60
100
IF=60A
50
80
40
TJ =125°C
trr (ns)
IF (A)
VR=150V
TJ =125°C
30
60
IF=30A
40 IF=15A
20
TJ =25°C
20
10
0
0
0
0.9
1.2
1.8
1.5
VF(V)
Fig1. Forward Voltage Drop vs Forward Current
0.3
0.6
24
200
400
600
800
1000
diF/dt(A/μs)
Fig2. Reverse Recovery Time vs diF/dt
600
VR=150V
TJ =125°C
20
VR=150V
TJ =125°C
500
16
400
IF=60A
12
IF=30A
Qrr (nc)
IRRM (A)
0
IF=60A
300
IF=30A
IF=15A
IF=15A
8
200
4
100
0
0
0
400
600
1000
800
diF/dt(A/μs)
Fig3. Reverse Recovery Current vs diF/dt
200
1.2
0
200
400
600
800
1000
diF/dt(A/μs)
Fig4. Reverse Recovery Charge vs diF/dt
10
1
1
ZthJC (K/W)
Kf
0.8
0.6
trr
0.4
IRRM
0.2
Qrr
-1
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
-2
10
0
0
25
50
100 125 150
75
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
10-3 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Page 2/3
http://www.thinkisemi.com/
F50UP30DN
®
IF
trr
IRRM
dIF/dt
Qrr
0.25 IRRM
0.9 IRRM
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters
Fig8. Package Outline
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/3
http://www.thinkisemi.com/
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