IRF7410TRPbF-1
HEXFET® Power MOSFET
VDS
-12
RDS(on) max
V
7
(@VGS = -4.5V)
RDS(on) max
9
(@VGS = -2.5V)
RDS(on) max
mΩ
13
(@VGS = -1.8V)
Qg (typical)
ID
(@TA = 25°C)
91
nC
-16
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7410PbF-1
SO-8
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7410TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
-16
-13
-65
2.5
1.6
20
±8
-55 to +150
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
1
www.irf.com © 2014 International Rectifier
Max.
Units
50
°C/W
Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min.
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
Typ. Max. Units
-12
–––
–––
–––
0.006
–––
V/°C Reference to 25°C, ID = -1mA
–––
7
VGS = -4.5V, ID = -16A
–––
–––
9
–––
–––
13
VGS = -1.8V, ID
V
VDS = VGS, ID = -250μA
mV/°C
S
VDS = -10V, ID = -16A
VGS(th)
Gate Threshold Voltage
-0.4
–––
-0.9
Gate Threshold Voltage Coefficient
Forward Transconductance
–––
55
-3.09
–––
–––
–––
Drain-to-Source Leakage Current
–––
–––
-1.0
–––
–––
-25
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
Qg
Total Gate Charge
–––
91
Qgs
Gate-to-Source Charge
–––
18
Qgd
Gate-to-Drain ("Miller") Charge
–––
25
td(on)
Turn-On Delay Time
–––
13
tr
Rise Time
–––
12
18
td(off)
Turn-Off Delay Time
–––
271
407
tf
Fall Time
–––
200
300
Ciss
Input Capacitance
–––
8676
–––
Coss
Output Capacitance
–––
2344
–––
Crss
Reverse Transfer Capacitance
–––
1604
–––
IGSS
Conditions
VGS = 0V, ID = -250μA
–––
ΔVGS(th)/ΔTJ
gfs
IDSS
V
mΩ
VGS = -2.5V, ID
d
= -13.6A d
= -11.5A d
VDS = -9.6V, VGS = 0V
μA
nA
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8V
VGS = 8V
ID = -16A
–––
nC
VDS =-9.6V
VGS = -4.5V
20
d
VDD = -6V VGS = -4.5V
ns
ID =-1.0A
RD = 6Ω
RG = 6Ω
VGS = 0V
pF
d
VDS = -10V
ƒ = 1.0 MHz
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode)
Diode Forward Voltage
trr
Reverse Recovery Time
–––
Qrr
Reverse Recovery Charge
–––
Typ. Max. Units
–––
–––
-2.5
–––
–––
-65
–––
–––
-1.2
V
97
145
134
201
ns
μC
A
c
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C
IF = -2.5A
di/dt = -100A/μs
d
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
Surface mounted on 1 in square Cu board, t ≤ 10sec.
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
d
IRF7410TRPbF-1
100
100
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
-1.0V
1
BOTTOM
10
-1.0V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
0.1
Tj = 150°C
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
T J = 25°C
0.1
VDS = -10V
≤60μs PULSE WIDTH
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
www.irf.com © 2014 International Rectifier
10
100
Fig 2. Typical Output Characteristics
100
1
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 150°C
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
1.8
2.0
ID = -16A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
12000
10000
Ciss
Coss = Cds + Cgd
8000
6000
4000
Coss
Crss
2000
6
-VGS , Gate-to-Source Voltage (V)
14000
4
3
2
1
0
10
100
0
20
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
60
80
100
120
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
100
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
100us
1ms
10
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
V DS=-9.6V
5
0
1
ID = -16A
www.irf.com © 2014 International Rectifier
1
0.1
1
10
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
Submit Datasheet Feedback
October 16, 2014
100
IRF7410TRPbF-1
16
VDS
-ID , Drain Current (A)
VGS
12
RD
D.U.T.
RG
-
+
VDD
VGS
8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
TC , Case Temperature ( °C)
150
10%
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
100
IRF7410TRPbF-1
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
(
RDS(on), Drain-to -Source On ResistanceΩ)
0.010
0.008
0.006
ID = -16A
0.004
0.002
0.0
2.0
4.0
6.0
8.0
0.02
0.015
VGS = -1.8V
0.01
VGS = -2.5V
0.005
VGS = -4.5V
0
0.0
10.0 20.0 30.0 40.0 50.0 60.0 70.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
12V
.2μF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
IG
Charge
Fig 14a. Basic Gate Charge Waveform
6
.3μF
www.irf.com © 2014 International Rectifier
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
700
1.0
600
500
Power (W)
-VGS(th) ( V )
0.8
ID = -250μA
0.6
400
300
200
0.4
100
0
0.2
-75
-50
-25
0
25
50
75
100
125
150
0.0001
0.0010
0.0100 0.1000
Time (sec)
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
7
www.irf.com © 2014 International Rectifier
1.0000 10.0000 100.0000
Fig 16. Typical Power Vs. Time
Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
6
8
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e1
A1
8X b
0.25 [.010]
A
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BASIC
.025 BAS IC
0.635 BASIC
e1
6X e
MILLIMETERS
MAX
A
5
INCHES
MIN
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
C A B
8X L
8X c
7
FOOTPRINT
NOTES :
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES].
4. OUT LINE CONFORMS T O JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS THE LENGTH OF LEAD F OR S OLDERING T O
A S UBS TRAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7101 (MOS F ET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DIS GNAT ES LEAD - F REE
PRODUCT (OPT IONAL)
Y = L AS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
†
Qualification information
Industrial
Qualification level
(per JE DEC JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JE DE C J-S TD-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
10/16/2014
Comments
• Corrected part number from" IRF7410PbF-1" to "IRF7410TRPbF-1" -all pages
• Removed the "IRF7410PbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014