Advance Technical Information IXFY26N30X3 IXFA26N30X3 IXFP26N30X3 X3-Class HiPERFETTM Power MOSFET VDSS ID25 RDS(on) = 300V = 26A 66m N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 26 A IDM TC = 25C, Pulse Width Limited by TJM 40 A IA TC = 25C 13 A EAS TC = 25C 250 mJ dv/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns PD TC = 25C 170 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220 (IXFP) GD G = Gate S = Source Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 500μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V 4.5 V 5 A 250 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance High Power Density Easy to Mount Space Savings V 100 nA VGS = 10V, ID = 0.5 • ID25, Note 1 D = Drain Tab = Drain Advantages Applications RDS(on) D (Tab) Features Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) S 53 66 m Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100861A(11/17) IXFY26N30X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 14 Ciss Coss IXFA26N30X3 IXFP26N30X3 23 S 1.4 1465 pF 225 pF 1 pF 100 350 pF pF 23 ns 25 ns 80 ns 19 ns 22 nC 7 nC 7 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.73 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 26 A Repetitive, pulse Width Limited by TJM 104 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 13A, -di/dt = 100A/μs 105 470 9 VR = 100V ns nC A Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFY26N30X3 IXFA26N30X3 IXFP26N30X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 28 70 VGS = 10V 9V 24 VGS = 10V 9V 60 8V 8V 50 7V I D - Amperes I D - Amperes 20 16 12 6V 8 40 7V 30 20 4 6V 10 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 5 10 VDS - Volts 3.0 28 VGS = 10V 8V I D - Amperes 16 RDS(on) - Normalized 7V 6V 12 8 4 4V 0 4.5 1.5 2 2.5 3 I D = 26A 1.8 I D = 13V 1.4 1.0 0.2 3.5 -50 4 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 4.0 BVDSS / VGS(th) - Normalized 1.1 3.5 RDS(on) - Normalized 2.2 0.6 5V 1 VGS = 10V 2.6 20 0.5 25 Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature o 0 20 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 24 15 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.6 0.5 0 10 20 30 40 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 50 60 70 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFY26N30X3 Fig. 7. Maximum Drain Current vs. Case Temperature IXFA26N30X3 IXFP26N30X3 Fig. 8. Input Admittance 40 30 VDS = 10V 35 25 30 I D - Amperes I D - Amperes 20 15 10 25 20 o TJ = 125 C 15 o 25 C o - 40 C 10 5 5 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 100 45 o 40 TJ = - 40 C VDS = 10V 90 80 70 o 30 25 C I S - Amperes g f s - Siemens 35 25 o 125 C 20 15 60 50 40 o TJ = 125 C 30 10 o TJ = 25 C 20 5 10 0 0 0 5 10 15 20 25 30 35 40 0.3 0.4 0.5 0.6 0.7 0.9 1.0 1.1 1.2 1.3 1.4 Fig. 12. Capacitance Fig. 11. Gate Charge 10000 9 VDS = 150V 8 I D = 13A Capacitance - PicoFarads 10 I G = 10mA 7 VGS - Volts 0.8 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 1000 100 Coss 10 Crss 1 f = 1 MHz 1 0 0.1 0 2 4 6 8 10 12 14 16 18 20 22 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFY26N30X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 4.5 RDS(on) Limit 4.0 3.5 10 3.0 ID - Amperes EOSS - MicroJoules IXFA26N30X3 IXFP26N30X3 2.5 2.0 100μs 1 1.5 1ms 10ms o 0.1 1.0 TJ = 150 C o TC = 25 C Single Pulse 0.5 DC 0.01 0.0 0 50 100 150 200 250 300 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_26N30X3(22-S30) 11-02-17 IXFY26N30X3 TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW E D1 D H IXFA26N30X3 IXFP26N30X3 L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source