NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package High Drain Efficiency (>60%) Applications Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM Applications VHF/UHF/L-Band/S-Band Radar DC-3.5 GHz 50W GaN HEMT Product Description The NPT2020 GaN HEMT is a wideband transistor optimized for DC-3.5 GHz operation. This device has been designed for linear and saturated operation with output power levels exceeding 50W (47 dBm) in an industry standard metal-ceramic package with a bolt down flange. RF Specifications (CW, 3.5 GHz): VDS = 48V, IDQ = 350mA, TC= 25°C Symbol Parameter Min Typ Max Units G SS Small-signal Gain - 17 - dB PSAT Saturated Output Power - 48 - dBm SAT Efficiency at Saturated Output Power - 60 - % Gain at POUT = 50W - 11 - dB Drain Efficiency at POUT = 50W - 52 - % Drain Voltage - 48 - V GP VDS Ruggedness: Output Mismatch, all phase angles Preliminary Datasheet Page 1 VSWR = TBD:1, No Device Damage NDS-037 Rev. 2, 072413 NPT2020 Preliminary DC Specifications: TC = 25°C Symbol Parameter Min Typ Max Units Off Characteristics IDLK Drain-Source Leakage Current (VGS=-8V, VDS=160V) - - 14 mA IGLK Gate-Source Leakage Current (VGS=-8V, VDS=0V) - - 7 mA On Characteristics VT Gate Threshold Voltage (VDS=48V, I D=14mA) -2.5 -1.5 -0.5 V VGSQ Gate Quiescent Voltage (VDS=48V, I D=350mA) -2.1 -1.2 -0.3 V RON On Resistance (VDS=2V, I D=105mA) - 0.34 - Maximum Drain Current (VDS=7V pulsed, 300µS pulse width, 0.2% Duty Cycle) - 8.2 - A Typ Units 2.3 °C/W ID, MAX Thermal Resistance Specification: Symbol RJC Parameter Thermal Resistance (Junction-to-Case), TJ = 200 °C Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in heatsink. Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 160 V VGS Gate-Source Voltage -10 to 3 V IG Gate Current 28 mA PT Total Device Power Dissipation (Derated above 25°C) 87 W -65 to 150 °C 225 °C TSTG TJ HBM Storage Temperature Range Operating Junction Temperature Human Body Model ESD Rating (per JESD22-A114) Preliminary Datasheet Page 2 Class 1C NDS-037 Rev. 2, 072413 NPT2020 Preliminary Load-Pull Data, Reference Plane at Device Leads VDS=48V, IDQ=350mA, TC=25C unless otherwise noted Optimum Source and Load Impedances: (CW Drain Efficiency and Output Power Tradeoff Impedance) Frequency ZS () PSAT (W) ZL () GSS (dB) (GHz) Drain Efficiency @ PSAT (%) 2.7 1.8 - j9.6 3.3 - j1.3 76 15 65 3.1 2.7 - j12 3.1 - j2.8 70 14 62 3.5 2.5 - j15 3.1 - j5.3 67 14 60 Figure 1: CW Power/Drain Efficiency Tradeoff Impedances, ZO=10 Figure 3: Efficiency vs. POUT Figure 2: Gain vs. POUT Preliminary Datasheet Page 3 NDS-037 Rev. 2, 072413 NPT2020 Preliminary 3.5 GHz Narrowband Circuit (CW, VDS=48V, IDQ=350mA, TC=25C, unless otherwise noted) Figure 4: Component Placement of 3.5 GHz Narrowband Circuit for NPT2020 Reference Value Manufacturer Part Number C1, C5 1µF AVX 1210C105KAT2A C2, C6 0.1µF Kemet C1206C104K1RACTU C3, C7 0.01µF AVX 12061C103KAT2A C4, C8 1000pF Kemet C0805C102K1RACTU C9, C11 5.6pF ATC ATC600F5R6FT C10, C13, C15 12pF ATC ATC600F120FT C12 10pF ATC ATC800B100FT C14 1.2pF ATC ATC600F1R2FT C16 5.6pF ATC ATC800B5R6FT C17 1.2pF ATC ATC800B1R2FT R1, R3 0Ω Panasonic ERJ-6GEY0R00V R2 20.5Ω Panasonic ERJ-6ENF20R5V L1 12.3nH Coilcraft 0806SQ_12N_L L2 15.7nH Coilcraft 0806SQ_16N_L PCB RO6006, r=6.15, 0.025” Rogers Nitronex NBD-121r1 Preliminary Datasheet Page 4 NDS-037 Rev. 2, 072413 NPT2020 Preliminary Typical Performance in 3.5 GHz Narrowband Circuit (CW, VDS=48V, IDQ=350mA, f=3.5GHz, TC=25C, unless otherwise noted) Figure 5. Electrical Schematic of 3.5 GHz Narrowband Circuit for NPT2020 (For RF Tuning details see Component Placement Diagram Figure 4) Figure 6: Gain vs. POUT Figure 7: Drain Efficiency vs. POUT Figure 8: Quiescent VGS vs. Temperature Preliminary Datasheet Figure 9: Power De-rating Curve (TJ = 225°C, TC > 25°C) Page 5 NDS-037 Rev. 2, 072413 NPT2020 Preliminary Typical Performance in 3.5 GHz Narrowband Circuit (CW, VDS=48V, IDQ=350mA, f=3.5GHz, TC=25C, unless otherwise noted) Figure 10: 2-Tone IMD3 vs. POUT vs. IDQ (1MHz Tone Spacing) Figure 11: 2-Tone Gain vs. POUT vs. IDQ (1MHz Tone Spacing) Figure 12: 2-Tone IMD vs. POUT (1MHz Tone Spacing) Preliminary Datasheet Page 6 NDS-037 Rev. 2, 072413 NPT2020 Preliminary Figure 13 - AC360B-2 Metal-Ceramic Package Dimensions (all dimensions in inches [millimeters]) Function Gate — RF Input Drain — RF Output (Cut lead) Source — Ground (Flange) Preliminary Datasheet Page 7 NDS-037 Rev. 2, 072413 NPT2020 Preliminary Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) [email protected] www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. © Nitronex, LLC 2013 All rights reserved. Preliminary Datasheet Page 8 NDS-037 Rev. 2, 072413