DMN63D1LW N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V(BR)DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Motor Control Power Management Functions Backlighting Case: SOT323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate) D SOT323 D G Gate Protection Diode ESD Protected Gate Top View S G S Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN63D1LW-7 DMN63D1LW-13 Notes: Case SOT323 SOT323 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year 2014 Code B Month Code Jan 1 D36 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September) D36 YM PRODUCT NEW INFORMATION ADVANCED NEW PRODUCT Product Summary 2015 C 2016 D 2017 E 2018 F 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DMN63D1LW Document number: DS37576 Rev. 2 - 2 1 of 6 www.diodes.com September 2015 © Diodes Incorporated DMN63D1LW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic PRODUCT NEW INFORMATION ADVANCED NEW PRODUCT Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V ID 380 300 mA ID 430 340 mA Maximum Continuous Body Diode Forward Current (Note 6) IS 0.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6) IDM 1.2 A Symbol Value Unit PD 310 mW Continuous Drain Current (Note 6) VGS = 10V Steady State t<5s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State Total Power Dissipation (Note 6) Steady State 410 Operating and Storage Temperature Range mW 311 RθJA t<5s °C/W 371 PD Thermal Resistance, Junction to Ambient (Note 6) Electrical Characteristics 411 RθJA t<5s °C/W 257 -55 to +150 TJ, TSTG °C (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS — — V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS 60 — — 1.0 µA VDS = 60V, VGS = 0V IGSS — — ±10 µA VGS = ±20V, VDS = 0V Gate Threshold Voltage VGS(TH) 1.0 2.5 V VDS = 10V, ID = 1mA Static Drain-Source On-Resistance RDS(ON) — 1.6 — — 2.0 3.0 Ω Forward Transfer Admittance |Yfs| 80 — — mS VDS = 10V, ID = 0.2A Diode Forward Voltage VSD — 0.75 1.1 V VGS = 0V, IS = 115mA Input Capacitance Ciss — 30 — pF Output Capacitance Coss — 4.2 — pF Reverse Transfer Capacitance Crss — 2.9 — pF Gate Resistance Rg — 133 Total Gate Charge Qg — 304 — — pC Gate-Source Charge Qgs — 203 — pC Gate-Drain Charge Qgd — 84 — pC tD(ON) — 3.9 — ns Turn-On Rise Time tR — 3.4 — ns Turn-Off Delay Time tD(OFF) — 15.7 — ns tF — 9.9 — ns OFF CHARACTERISTICS (Note 7) Gate-Source Leakage ON CHARACTERISTICS (Note 7) VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A DYNAMIC CHARACTERISTICS (Note 8) Turn-On Delay Time Turn-Off Fall Time Notes: Ω VDS = 25V, VGS = 0V f = 1.0MHz f = 1MHz, VGS = 0V, VDS = 0V VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN63D1LW Document number: DS37576 Rev. 2 - 2 2 of 6 www.diodes.com September 2015 © Diodes Incorporated DMN63D1LW 2.5 1.4 ID, DRAIN CURRENT (A) VGS = 6.0V 1.0 VGS = 5.0V 0.8 VGS = 4.0V 0.6 VGS = 3.0V 0.4 0.2 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 2 1.5 1 VGS = 10.0V, ID = 150mA 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 2. On-Resistance Variation with Temperature 5 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS = 10.0V, ID = 300mA 0 0.0 1.6 ID = 250µA 1.2 0.8 0.4 1.6 ID = 1mA 1.2 0.8 0.4 0 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 3. Gate Threshold Variation with Temperature RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) VDS = 10.0V TA = 150oC 0.1 TA = 125oC 0.01 TA = 85oC TA = 25oC TA = -55oC 0.001 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE SOURCE VOLTAGE (V) Figure 5. Typical Transfer Characteristics DMN63D1LW Document number: DS37576 Rev. 2 - 2 -50 150 1 ID, DRAIN CURRENT (A) PRODUCT NEW INFORMATION ADVANCED NEW PRODUCT VGS = 8.0V RDS(ON), STATIC DRAIN-SOURCE, ONRESISTANCE (Ω) VGS = 10.0V 1.2 5 3 of 6 www.diodes.com -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 4. Gate Threshold Variation with Temperature 150 5 VGS = 5.0V 4 3 TA = 85oC TA = 125oC TA = 150oC 2 1 TA = -55oC TA = 25oC 0 0.001 0.01 0.1 1 ID, DRAIN-SOURCE CURRENT (A) Figure 6. Static Drain-Source On-Resistance vs. Drain Current September 2015 © Diodes Incorporated RDS(ON), STATIC DRAIN-SOURCE, ONRESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) 2 5 VGS = 10.0V 4 3 TA = TA = 150oC TA = 125oC 85oC 2 1 TA = -55oC TA = 25oC TJ = 25℃ 1.8 1.6 1.2 ID = 150mA 1 0 2 3 4 5 6 7 8 9 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 8. Static Drain-Source On-Resistance vs. Gate-Source Voltage 0.01 0.1 1 ID, DRAIN-SOURCE CURRENT (A) Figure 7. Static Drain-Source On-Resistance vs. Drain Current 50 1 VGS = 0V f=1MHz 45 CT, JUNCTION CAPACITANCE (pF) IDR, REVERSE DRAIN CURRENT (A) ID = 300mA 1.4 0.001 TJ = 150oC 0.1 TJ = 125oC TJ = 85oC 0.01 TJ = 25oC TJ = -55oC 40 35 Ciss 30 25 20 15 Coss 10 Crss 5 0 0.001 0 0.5 1 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Reverse Drain Current 1.5 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 30 10 RDS(ON) LIMITED PW =100µs ID, DRAIN CURRENT (A) PRODUCT NEW INFORMATION ADVANCED NEW PRODUCT DMN63D1LW PW =1ms 1 0.1 PW =10ms PW =100ms PW =1s TJ(Max)=150℃ TA=25℃ Single Pulse DUT on 1*MRP board VGS=10V 0.01 0.001 0.1 PW =10s DC 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. SOA, Safe Operation Area DMN63D1LW Document number: DS37576 Rev. 2 - 2 100 4 of 6 www.diodes.com September 2015 © Diodes Incorporated DMN63D1LW PRODUCT NEW INFORMATION ADVANCED NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=408°C/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D A2 c A1 e a L b E E1 F SOT323 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC e1 1.20 1.40 1.30 F 0.375 0.475 0.425 L 0.25 0.40 0.30 a 8° All Dimensions in mm e1 DMN63D1LW Document number: DS37576 Rev. 2 - 2 5 of 6 www.diodes.com September 2015 © Diodes Incorporated DMN63D1LW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. PRODUCT NEW INFORMATION ADVANCED NEW PRODUCT X Y Dimensions Y1 C G X Y Y1 G Value (in mm) 0.650 1.300 0.470 0.600 2.500 C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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