Diodes DMP6023LFGQ P-channel enhancement mode mosfet Datasheet

DMP6023LFGQ
60V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
RDS(ON) max
ID max
TA = +25°C
25mΩ @ VGS = -10V
-7.7A
33mΩ @ VGS = -4.5V
-6.8A
V(BR)DSS
-60V
Features and Benefits

Low RDS(ON) – ensures on state losses are minimized

Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)





Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AECQ101, supported by a
PPAP and is ideal for use in:








Backlighting
Power Management Functions
DC-DC Converters

Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
POWERDI®3333-8
D
Pin 1
S
S
S
G
G
D
D
D
D
S
Bottom View
Top View
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMP6023LFGQ-7
DMP6023LFGQ-13
Notes:
Case
POWERDI®3333-8
POWERDI®3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
ADVANCE INFORMATION
Product Summary
P23
P23 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 13 = 2013)
WW = Week Code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated.
DMP6023LFGQ
Document number: DS38647 Rev. 1 - 2
1 of 7
www.diodes.com
March 2016
© Diodes Incorporated
DMP6023LFGQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
t<10s
Value
-60
±20
-7.7
-6.2
ID
A
-10.3
-8.2
-55
-2.2
-35.5
62.9
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
Units
V
V
IDM
IS
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 6)
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Value
1.0
123
69
2.1
60
34
6.3
-55 to +150
RJA
Total Power Dissipation (Note 7)
PD
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
RJA
RJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-60
—
—
—
—
—
—
-1
±100
V
µA
nA
VGS = 0V, ID = -250μA
VDS = -60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)
-3
25
33
-1.2
V
Static Drain-Source On-Resistance
-1
—
mΩ
VDS = VGS, ID = -250μA
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -4A
VGS = 0V, IS = -1A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
VSD
—
—
—
—
-0.7
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
—
—
—
—
—
—
—
—
—
—
—
—
—
2569
179
143
8
26.5
53.1
7.1
12.6
6
7.1
110
62
20
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
QRR
—
14
—
nC
V
Test Condition
VDS = -30V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -30V, ID = -5A
VGS = -10V, VDS = -30V,
RG = 3Ω, ID = -5A
IF = -5A, di/dt = 100A/μs
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMP6023LFGQ
Document number: DS38647 Rev. 1 - 2
2 of 7
www.diodes.com
March 2016
© Diodes Incorporated
DMP6023LFGQ
30.0
30
VGS = -10V
VGS = -3.5V
VGS = -5.0V
20.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = -4.5V
VGS = -4.0V
15.0
VGS = -3.0V
10.0
VGS = -2.8V
5.0
20
15
10
TA = 150C
5
T A = 125 C
TA = 85C
TA = 25C
T A = -55C
0
1
2
3
4
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.04
0.035
0.03
VGS = -4.5V
0.025
VGS = -10V
0.02
0.015
0.01
0.005
0
0
5
10
15
20
25
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.2
ID = -5.0A
0.18
0.16
ID = -4.0A
0.14
0.12
0.1
0.08
0.06
0.04
0.02
30
0
0
2
4
6
8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2
0.05
VGS = -4.5V
TA = 150C
1.8
T A = 125 C
0.04
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.0
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCE INFORMATION
25.0
VDS = -5.0V
TA = 85C
0.03
T A = 25C
0.02
TA = -55C
0.01
1.6
1.4
VGS = -4.5V
ID = -5A
1.2
1
0.8
0.6
0
0
5
10
15
20
25
ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
0.4
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMP6023LFGQ
Document number: DS38647 Rev. 1 - 2
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0.05
)V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
, )H
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.045
0.04
0.035
VGS = -4.5V
ID = -5A
0.03
0.025
0.02
0.015
0.01
T
(
S
G
V
0.005
0
-50
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
-ID =1mA
-ID = 250µA
-25
0
25
50
75 100 125 150
TA , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
10000
30
CT, JUNCTION CAPACITANCE (pF)
f = 1MHz
IS, SOURCE CURRENT (A)
25
20
15
TA= 150 C
TA= 125C
10
TA= 85C
5
TA= 25C
TA= -55C
Ciss
1000
Coss
Crss
0
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
100
1.5
10
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
100
RDS(on)
Limited
9
8
)A 10
(
T
N
E
DC
R
R
PW = 10s
U
1
C
PW = 1s
N
IA
PW = 100ms
R
D
PW = 10ms
,D
I 0.1 T
PW = 1ms
J(max) = 150°C
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE INFORMATION
DMP6023LFGQ
7
6
VDS = -30V
ID = -5A
5
4
3
2
TA = 25°C
VGS = -10V
Single Pulse
DUT on 1 * MRP Board
1
0
0
5
10 15 20 25 30 35 40 45 50 55
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
0.01
0.1
PW = 100µs
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated.
DMP6023LFGQ
Document number: DS38647 Rev. 1 - 2
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DMP6023LFGQ
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R JA(t) = r(t) * R JA
RJA
= 127°
127癈
/W
R
C/W
JA =
Duty Cycle, D = t1/ t2
Single Pulse
0.001
1E-04
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
100
1000
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DMP6023LFGQ
Document number: DS38647 Rev. 1 - 2
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DMP6023LFGQ
Package Outline Dimensions
ADVANCE INFORMATION
Please see http://www.diodes.com/package-outlines.html for the latest version.
POWERDI®3333-8
A3
A1
A
Seating Plane
D
L(4x)
D2
1
Pin #1 ID
E4
b2(4x)
E
E3
E2
L1(3x)
8
z(4x)
POWERDI®3333-8
Dim Min Max Typ
A
0.75 0.85 0.80
A1 0.00 0.05 0.02
A3

 0.203
b
0.27 0.37 0.32
b2 0.15 0.25 0.20
D
3.25 3.35 3.30
D2 2.22 2.32 2.27
E
3.25 3.35 3.30
E2 1.56 1.66 1.61
E3 0.79 0.89 0.84
E4 1.60 1.70 1.65
e
0.65


L
0.35 0.45 0.40
L1
0.39


z

 0.515
All Dimensions in mm
b
e
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
POWERDI®3333-8
X3
X2
8
Y2
X1
Y1
Y3
Y
Dimensions Value (in mm)
C
0.650
X
0.420
X1
0.420
X2
0.230
X3
2.370
Y
0.700
Y1
1.850
Y2
2.250
Y3
3.700
1
X
C
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DMP6023LFGQ
Document number: DS38647 Rev. 1 - 2
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DMP6023LFGQ
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
DMP6023LFGQ
Document number: DS38647 Rev. 1 - 2
7 of 7
www.diodes.com
March 2016
© Diodes Incorporated
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