TI1 MPC100AU/2K5 Wide bandwidth 4x1 video multiplexer Datasheet

MP
®
MPC100
C10
0
MPC
100
Wide Bandwidth
4 x 1 VIDEO MULTIPLEXER
FEATURES
The MPC100 consists of four identical monolithic integrated open-loop buffer amplifiers, which are connected internally at the output. The unidirectional transmission path consists of bipolar complementary buffers,
which offer extremely high output-to-input isolation.
The MPC100 multiplexer enables one of the four input
channels to connect to the output. The output of the
multiplexer is in a high-impedance state when no channel is selected. When one channel is selected with a
digital “1” at the corresponding SEL-input, the component acts as a buffer with high input impedance and low
output impedance.
● BANDWIDTH: 250MHz (1.4Vp-p)
● LOW INTERCHANNEL CROSSTALK:
≤60dB (30MHz, DIP); ≤70dB (30MHz, SO)
● LOW SWITCHING TRANSIENTS:
+2.5/–1.2mV
● LOW DIFFERENTIAL GAIN/PHASE
ERRORS: 0.05%, 0.01°
● LOW QUIESCENT CURRENT:
One Channel Selected: ±4.6mA
No Channel Selected: ±230µA
The wide bandwidth of over 250MHz at 1.4Vp-p
signal level, high linearity and low distortion, and low
input voltage noise of 4nV/√Hz make this crosspoint
switch suitable for RF and video applications. All
performance is specified with ±5V supply voltage,
which reduces power consumption in comparison with
±15V designs. The multiplexer is available in spacesaving SO-14 and DIP packages. Both are designed
and specified for operation over the industrial temperature range (–40°C to +85°C.)
APPLICATIONS
● VIDEO ROUTING AND MULTIPLEXING
(CROSSPOINTS)
● RADAR SYSTEMS
● DATA ACQUISITION
● INFORMATION TERMINALS
● SATELLITE OR RADIO LINK IF ROUTING
IN1
DESCRIPTION
DB1
IN2
The MPC100 is a very wide bandwidth 4-to-1 channel
video signal multiplexer which can be used in a wide
variety of applications.
MPC100 is designed for wide-bandwidth systems,
including high-definition television and broadcast
equipment. Although it is primarily used to route
video signals, the harmonic and dynamic attributes of
the MPC100 make it appropriate for other analog
signal routing applications such as radar, communications, computer graphics, and data acquisition systems.
DB2
VOUT
IN3
DB3
IN4
DB4
SEL1 SEL2 SEL3 SEL4
TRUTH TABLE
SEL1
SEL2
SEL3
SEL4
VOUT
0
1
0
0
0
0
0
1
0
0
0
0
0
1
0
0
0
0
0
1
HI-Z
IN1
IN2
IN3
IN4
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©
SBFS004
1991 Burr-Brown Corporation
PDS-1133F
Printed in U.S.A. March, 1995
SPECIFICATIONS
At VCC = ±5V, RL = 10kΩ, RSOURCE = 50Ω, and TA = +25°C, unless otherwise noted.
MPC100AP, AU
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
+10
±30
–80
–50
–50
±3
±30
mV
µV/°C
dB
dB
dB
mV
±10
VCC = ±4.5V to ±5.5V
VCC = +4.5V to +5.5V
VCC = –4.5V to –5.5V
+4
20
±380
+1.0
–11.0
µA
nA/°C
nA/V
µA/V
µA/V
Channel On
Channel On
Channel Off
0.88
1.0
1.0
MΩ
pF
pF
fB = 20kHz to 10MHz
S/N = 0.7/V N • √5MHz
4.0
98
nV/√Hz
dB
Gain Error ≤ 10%
±4.2
V
0.982
0.992
V/V
V/V
DC CHARACTERISTICS
INPUT OFFSET VOLTAGE
Initial
vs Temperature
vs Supply (Tracking)
vs Supply (Non-tracking)
vs Supply (Non-tracking)
Initial Matching
INPUT BIAS CURRENT
Initial
vs Temperature
vs Supply (Tracking)
vs Supply (Non-tracking)
vs Supply (Non-tracking)
INPUT IMPEDANCE
Resistance
Capacitance
Capacitance
INPUT NOISE
Voltage Noise Density
Signal-to-Noise Ratio
INPUT VOLTAGE RANGE
TRANSFER CHARACTERISTICS
CHANNEL SELECTION INPUTS
Logic 1 Voltage
Logic 0 Voltage
Logic 1 Current
Logic 0 Current
SWITCHING CHARACTERISTICS
SEL to Channel ON Time
SEL to Channel OFF Time
Switching Transient, Positive
Switching Transient, Negative
OUTPUT
Voltage
Resistance
Resistance
Capacitance
RIN = 0, RSOURCE = 0
VCC = ±4.5V to ±5.5V
VCC = +4.5V to +5.5V
VCC = –4.5V to –5.5V
Between the Four Channels
–40
Voltage Gain
RL = 1kΩ, VIN = ±2V
RL = 10kΩ, VIN = ±2.8V
0.98
+2.0
0
V
V
µA
µA
VSEL = 5.0V
VSEL = 0.8V
100
0.002
VI = –0.3V to +0.7V, f = 5MHz
90% Point of VO = 1Vp-p
10% Point of VO = 1Vp-p
Measured While Switching
Between Two Grounded Channels
0.25
0.25
+2.5
–1.2
µs
µs
mV
mV
±2.98
11
900
1.5
V
Ω
MΩ
pF
VIN = ±3V, RL = 5kΩ
One Channel Selected
No Channel Selected
No Channel Selected
POWER SUPPLY
Rated Voltage
Derated Performance
Quiescent Current
VCC
+0.8
150
5
±2.8
±4.5
One Channel Selected
No Channel Selected
TEMPERATURE RANGE
Operating, AP, AU
Storage, AP, AU
Thermal Resistance, θJA
AP, AU
±5
±4.6
±230
–40
–40
90
±5.5
±5
±350
V
V
mA
µA
+85
+125
°C
°C
°C/W
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
MPC100
2
SPECIFICATIONS
At VCC = ±5V, RL = 10kΩ, RSOURCE = 50Ω, and TA = +25°C, unless otherwise noted.
MPC100AP, AU
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
AC CHARACTERISTICS
FREQUENCY DOMAIN
LARGE SIGNAL BANDWIDTH (–3dB)
VO = 5.0Vp-p, COUT = 1pF
VO = 2.8Vp-p, COUT = 1pF
VO = 1.4Vp-p, COUT = 1pF
SMALL SIGNAL BANDWIDTH
VO = 0.2Vp-p, COUT = 1pF
DIFFERENTIAL PHASE
GAIN FLATNESS PEAKING
HARMONIC DISTORTION
Second Harmonic
Third Harmonic
CROSSTALK
MPC100AP All Hostile
Off Isolation
MPC100AU All Hostile
Off Isolation
MHz
MHz
MHz
450
MHz
450
ps
f = 4.43MHz, VIN = 0.3Vp-p
VDC = 0 to 0.7V
VDC = 0 to 1.4V
0.05
0.06
%
%
f = 4.43MHz, VIN = 0.3Vp-p
VDC = 0 to 0.7V
VDC = 0 to 1.4V
0.01
0.02
Degrees
Degrees
VO = 0.2Vp-p, DC to 30MHz
VO = 0.2Vp-p, DC to 100MHz
0.04
0.05
dB
dB
–53
–67
dBc
dBc
VI = 1.4Vp-p, Figures 4 and 8
f = 5MHz,
f = 30MHz,
f = 5MHz,
f = 30MHz,
f = 5MHz,
f = 30MHz,
f = 5MHz,
f = 30MHz
–82
–60
–70
–71
–78
–70
–75
–76
dB
dB
dB
dB
dB
dB
dB
dB
VO = 1.4Vp-p, Step 10% to 90%
COUT = 1pF, ROUT = 22Ω
3.3
ns
VO = 2Vp-p
COUT = 1pF
COUT = 22pF
COUT = 47pF
650
460
320
V/µs
V/µs
V/µs
GROUP DELAY TIME
DIFFERENTIAL GAIN
70
140
250
f = 30MHz, VO = 1.4Vp-p, RL = 1kΩ
TIME DOMAIN
RISE TIME
SLEW RATE
®
3
MPC100
CONNECTION DIAGRAM
FUNCTIONAL DESCRIPTION
Top View
DIP/SO-14
IN1
1
GND
2
IN2
3
GND
4
IN3
5
GND
6
IN4
7
DB1
DB2
IN1 -IN4
Four analog input channels
GND
Analog input shielding grounds, connect to system ground
SEL1 - SEL4
Channel selection inputs
14 SEL1
VOUT
Analog output; tracks selected channel
13 SEL2
–VCC
Negative supply voltage; typical –5VDC
12 –VCC
+VCC
Positive supply voltage; typical +5VDC
11 VOUT
ELECTROSTATIC
DISCHARGE SENSITIVITY
10 +VCC
DB3
DB4
9
SEL3
8
SEL4
Electrostatic discharge can cause damage ranging from performance degradation to complete device failure. Burr-Brown
Corporation recommends that all integrated circuits be handled
and stored using appropriate ESD protection methods.
MPC100
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet published specifications.
ABSOLUTE MAXIMUM RATINGS
Power Supply Voltage (±VCC) .............................................................. ±6V
Analog Input Voltage (IN1 through IN4)(1) ................................ ±VCC, ±0.7V
Logic Input Voltage ................................................... –0.6V to +VCC +0.6V
Operating Temperature ..................................................... –40°C to +85°C
Storage Temperature ...................................................... –40°C to +125°C
Output Current .................................................................................. ±6mA
Junction Temperature .................................................................... +175°C
Lead Temperature (soldering, 10s) ................................................ +300°C
Digital Input Voltages (SEL1 through SEL4)(1) ........... –0.5V to +VCC +0.7V
NOTE: (1) Inputs are internally diode-clamped to ±VCC.
PACKAGE/ORDERING INFORMATION
PRODUCT
TEMPERATURE
RANGE
PACKAGE
PACKAGE
DRAWING
NUMBER(1)
MPC100AP
MPC100AU
–40°C to +85°C
–40°C to +85°C
14-Pin Plastic DIP
SO-14 Surface Mount
010
235
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
®
MPC100
4
TYPICAL PERFORMANCE CURVES
At VCC = ±5V, RLOAD = 10kΩ, RSOURCE = 50Ω, and TA = +25°C, unless otherwise noted.
INPUT BIAS CURRENT vs TEMPERATURE
5
4
4
3
3
2
2
Bias Current (µA)
Voltage (mV)
OFFSET VOLTAGE vs TEMPERATURE
5
1
0
–1
–2
1
0
–1
–2
–3
–3
–4
–5
–4
–5
–40
–20
0
20
40
60
80
100
–40
–20
0
Temperature (°C)
40
60
80
100
OUTPUT IMPEDANCE vs FREQUENCY
100
100k
30
Output Impedance (Ω)
Input Impedance (Ω)
INPUT IMPEDANCE vs FREQUENCY
1.0M
10k
1k
100
10
3
1
10k
100k
1M
10M
100M
1G
10k
100k
1M
Frequency (Hz)
10M
100M
1G
Frequency (Hz)
TOTAL QUIESCENT CURRENT vs TEMPERATURE
TOTAL QUIESCENT CURRENT vs TEMPERATURE
300
9
No Channel Selected
8
One Channel Selected
250
7
Supply Current (µA)
Supply Current (mA)
20
Temperature (°C)
6
5
4
3
200
150
100
2
50
1
0
–40
0
–20
0
20
40
60
80
100
–40
Temperature (°C)
–20
0
20
40
60
80
100
Temperature (°C)
®
5
MPC100
TYPICAL PERFORMANCE CURVES (CONT)
At VCC = ±5V, RLOAD = 10kΩ, RSOURCE = 50Ω, and TA = +25°C, unless otherwise noted.
TRANSFER FUNCTION
INPUT VOLTAGE NOISE SPECTRAL DENSITY
100
5
4
Voltage Noise (nV/ Hz)
Output Voltage (V)
3
2
1
0
–1
–2
–3
–4
–5
10
1
0.1
–5
–4
–3
–2
–1
0
1
2
3
4
5
100
1k
10k
Input Voltage (V)
100k
1M
10M
100M
Frequency (Hz)
SWITCHING ENVELOPE (Video Signal)
SWITCHING TRANSIENTS (Channel To Channel)
12
5V
10
Output Voltage (V)
SEL1
Output Voltage (mV)
+0.7V
0V
–0.3V
8
Without bandwidth
limiting lowpass filter.
6
SEL2
5V
4
2
0
–2
–4
Time (µs)
0
20
40
60
80
100 120 140 160 180 200
Time (ns)
SMALL SIGNAL PULSE RESPONSE
SWITCHING TRANSIENTS (Channel To Channel)
Output Voltage (40mV/Div)
5V
Output Voltage (mV)
SEL1
SEL2
36MHz Low pass filter acc.
Eureka Rec. EU95-PG03
in the signal path.
5V
–4
0
20
40
60
80
Time (ns)
COUT = 1pF, tRISE = tFALL = 2ns
(Generator) VI = 0.2Vp-p
100 120 140 160 180 200
Time (ns)
®
MPC100
0—
6
TYPICAL PERFORMANCE CURVES (CONT)
At VCC = ±5VDC, RLOAD = 10kΩ, RSOURCE = 50Ω, and TA = +25°C, unless otherwise noted.
LARGE SIGNAL PULSE RESPONSE
Output Voltage (1V/Div)
Output Voltage (40mV/Div)
SMALL SIGNAL PULSE RESPONSE
0—
0—
Time (ns)
COUT = 47pF, tRISE = tFALL = 2ns
(Generator) VI = 0.2Vp-p
Time (ns)
COUT = 1pF, tRISE = tFALL = 5ns
(Generator) VI = 5Vp-p
LARGE SIGNAL PULSE RESPONSE
GROUP DELAY TIME vs FREQUENCY
2.5
Delay Time (ns)
Output Voltage (1V/Div)
2
1.5
0—
1
0.5
Group Delay Time
0
ROUT
50Ω
RI
150Ω
–0.5
VI
–1
DUT
Out
VOUT =
300mVPO
–1.5
–2
–2.5
Time (ns)
COUT = 47pF, tRISE = tFALL = 5ns
(Generator) VI = 5Vp-p
1M
10M
Frequency (Hz)
BANDWIDTH vs COUT WITH RECOMMENDED ROUT
0.5
15
0.4
10
0.3
0.2
0
–15
–20
–25
Output (dB)
Gain (dB)
5
–10
500M
GAIN FLATNESS
20
–5
100M
1pF
COUT
ROUT
f–3dB
500MHz
1p
0Ω
10p
22Ω 340MHz
10pF
22p
15Ω 250MHz
22pF
33p
12Ω 215MHz
33pF
47p
10Ω 130MHz
dB
1M
10M
0.2Vp-p
0
–0.1
–0.2
47pF
100M
0.1
–0.3
RIN = 150Ω, RO1 = 1kΩ
–0.4
COUT = 22pF, ROUT = 15Ω
–0.5
300k
1G
1M
10M
100M
1G
Frequency (Hz)
Frequency (Hz)
®
7
MPC100
TYPICAL PERFORMANCE CURVES (CONT)
At VCC = ±5V, RLOAD = 10kΩ, RSOURCE = 50Ω, and TA = +25°C, unless otherwise noted.
BANDWIDTH vs RLOAD
BANDWIDTH vs OUTPUT VOLTAGE
20
20
5Vp-p
15
10
2.8Vp-p
10
5
1.4Vp-p
5
0
Output (dBm)
Output (dBm)
15
0.6Vp-p
–5
–10
0.2Vp-p
–15
0
–5
–10
–15
–20
COUT = 1pF, ROUT = 0Ω
–20
COUT = 22pF, ROUT = 15Ω, VO = 2.8Vp-p
–25
RIN = 150Ω
–25
RL = 500Ω = 1kΩ = 10kΩ
dB
dB
300k
1M
10M
100M
1G
300k
1M
Frequency (Hz)
10M
100M
Frequency (Hz)
30MHz HARMONIC DISTORTION
BANDWIDTH MATCHING (DB1...DB4)
20
10
10dB/Div
Harmonic Distortion (dB)
15
2.8Vp-p
0
–5
–10
–15
–20
–25
COUT = 22pF, ROUT = 15Ω
Frequency (Hz)
VOUT = 2.8Vp-p, RL = 1kΩ, COUT = 1pF
dB
300k
1M
10M
100M
1G
Frequency (Hz)
30MHz HARMONIC DISTORTION
10dB/Div
Harmonic Distortion (dB)
Output (dBm)
5
Frequency (Hz)
VOUT = 2.8Vp-p, R L = 10kΩ, COUT = 1pF
®
MPC100
8
1G
APPLICATIONS INFORMATION
emitter followers applies no feedback, so their low frequency gain is slightly less than unity and somewhat dependent on loading. Unlike devices using MOS bilateral switching elements, the bipolar complementary buffers form an
unidirectional transmission path and thus provide high output-to-input isolation. Switching stages compatible to TTL
level digital signals are provided for each buffer to select the
input channel. When no channel is selected, the output of the
device is high-impedance and allows the user to wire more
MPC100s together to form switch multi-channel matrices.
The MPC100 operates from ±5V power supplies (±6V
maximum). Do not attempt to operate with larger power
supply voltages or permanent damage may occur. The buffer
outputs are not current-limited or protected. If the output is
shorted to ground, currents up to 18mA could flow. Momentary shorts to ground (a few seconds) should be avoided, but
are unlikely to cause permanent damage.
INPUT PROTECTION
All pins on the MPC100 are internally protected from ESD
by means of a pair of back-to-back reverse-biased diodes to
either power supply as shown in Figure 1. These diodes will
begin to conduct when the input voltage exceeds either
power supply by about 0.7V. This situation can occur with
loss of the amplifier’s power supplies while a signal source
is still present. The diodes can typically withstand a continuous current of 30mA without destruction. To insure long
term reliability, however, diode current should be externally
limited to 10mA or less whenever possible.
If one channel is selected with a digital “1” at the corresponding SEL-input, the MPC100 acts as a buffer amplifier
with high input impedance and low output impedance. The
truth table on the front page describes the relationship
between the digital inputs (SEL1 to SEL4) and the analog
inputs (IN1 to IN4), and which signal is selected at the
output.
The 2-4 address decoder and chip select logic is not
integrated. The selected design increases the flexibility of
address decoding in complex distribution fields, eases
BUS-controlled channel selection, simplifies channel selection monitoring for the user, and lowers transient peaks.
All of these characteristics make the multiplexer, in effect,
a quad switchable high-speed buffer. It requires DC coupling and termination resistors when directly driven from
a low impedance cable. High-current output amplifiers are
recommended when driving low-impedance transmission
lines or inputs.
The internal protection diodes are designed to withstand
2.5kV (using Human Body Model) and will provide adequate ESD protection for most normal handling procedures. However, static damage can cause subtle changes in
amplifier input characteristics without necessarily destroying the device. In precision buffer amplifiers, this may cause
a noticeable degradation of offset voltage and drift. Therefore, static protection is strongly recommended when handling the MPC100.
An advanced complementary bipolar process, consisting of
pn-junction isolated high-frequency NPN and PNP transistors, provides wide bandwidth while maintaining low
crosstalk and harmonic distortion. The single chip bandwidth of over 250MHz at an output voltage of 1.4Vp-p
allows the design of large crosspoint or distribution fields
in HDTV-quality with an overall system bandwidth of
36MHz. The buffer amplifiers also offer low differential
gain (0.05%) and phase (0.01°) errors. These parameters
are essential for video applications and demonstrate how
well the signal path maintains a constant small-signal gain
and phase for the low-level color subcarrier at 4.43MHz
(PAL) or 3.58MHz (NSTC) as the brightness (luminance)
signal is ramped through its specified range. The bipolar
construction also ensures that the input impedance remains
high and constant between ON and OFF states. The ON/
OFF input capacitance ratio is near unity, and does not vary
with power supply voltage variations. The low output
capacitance of 1.5pF when no channel is selected is a very
important parameter for large distribution fields. Each parallel output capacitance is an additional load and reduces
the overall system bandwidth.
Static damage has been well recognized for MOSFET devices, but any semiconductor device deserves protection
from this potentially damaging source. The MPC100 incorporates on-chip ESD protection diodes as shown in Figure 1.
This eliminates the need for the user to add external protection diodes, performance.
+VCC
External Pin
ESD Protection diodes
internally connected to all pins.
Internal Circuitry
–VCC
FIGURE 1. Internal ESD Protection.
DISCUSSION
OF PERFORMANCE
Bipolar video crosspoint switches are virtually glitch-free
when compared to signal switches using CMOS or DMOS
devices. The MPC100 operates with a fast make-beforebreak switching action to keep the output switching transients small and short. Switching from one channel to
another causes the signal to mix at the output for a short
time, but it interferes only minimally with the input signals.
The MPC100 video multiplexer allows the user to connect
any one of four analog input channels (IN1-IN4) to the output
of the component and to switch between channels within
less than 0.5µs. It consists of four identical unity-gain buffer
amplifiers, which are connected together internally at the
output. The open loop buffers consisting of complementary
®
9
MPC100
The transient peaks remain less than +2.5mV and –1.2mV.
Subsequent equipment might interpret large negative output
glitches as synchronization pulses. To remove this problem,
the output must be clamped during the switching dead time.
With the MPC100, the generated output transients are extremely small and clamping is unnecessary. The switching
time between two channels is less than 0.5µs. This short
time period allows easy switching during the vertical blanking time. The signal envelope during the transition from one
channel to another rises and falls symmetrically and shows
less overshooting or DC settling transients.
• Bypass power supplies very close to the device pins. Use
tantalum chip capacitors (approximately 2.2µF), a parallel
470pF ceramic chip capacitor may be added if desired.
Surface-mount types are recommended due to their low
lead inductance.
• PC board traces for signal and power lines should be wide
to reduce impedance or inductance.
• Make short and low inductance traces. The entire physical
circuit layout should be as small as possible.
• Use a low-impedance ground plane on the component side
to ensure that low-impedance ground is available throughout the layout. Grounded traces between the input traces
are essential to achieve high interchannel crosstalk rejection. Refer to the suggested layout shown in Figure 6.
Power consumption is a serious problem when designing
large crosspoint fields with high component density. Most of
the buffers are always in off-state. One important design
goal was to attain low off-state quiescent current when no
channel is selected. The low supply current of ±230µA in
off-state and ±4.6mA when one channel is selected, as well
as the reduced ±5V supply voltage, conserves power, simplifies the power supply design, and results in cooler, more
reliable operation.
• Do not extend the ground plane under high-impedance
nodes sensitive to stray capacitances, such as the buffer’s
input terminals.
• Sockets are not recommended because they add significant inductance and parasitic capacitance. If sockets are
required, use zero-profile solderless sockets.
CIRCUIT LAYOUT
The high-frequency performance of the MPC100 can be
greatly affected by the physical layout of the circuit. The
following tips are offered as suggestions, not as absolutes.
Oscillations, ringing, poor bandwidth and settling, higher
crosstalk, and peaking are all typical problems which plague
high-speed components when they are used incorrectly.
• Use low-inductance and surface-mounted components to
achieve the best AC-performance.
• A resistor (100Ω to 200Ω) in series with the input of the
buffers may help to reduce peaking. Place the resistor as
close as possible to the pin.
• Plug-in prototype boards and wire-wrap boards will not
function well. A clean layout using RF techniques is
essential.
SEL1
(14)
IN1
DB1
(1)
GND
(2)
+VCC = +5V
(10)
SEL2
(13)
IN2
(3)
VOUT
(11)
DB2
GND
SEL3
(4)
(9)
IN3
DB3
(5)
GND
SEL1
(6)
(8)
IN4
DB4
(7)
NOTE: DB = Diamond Buffer
FIGURE 2. Simplified Circuit Diagram.
®
MPC100
10
–VCC = –5V
(12)
10
0
150Ω
DB1
SEL1
SEL2
SEL3
SEL4
GND
50Ω
150Ω IN
2
VI
50Ω
0
0
1
0
–10
Crosstalk (dB)
IN1
DB2
15Ω
GND
180Ω
50Ω
50Ω
BUF601
VO
22pF
IN3
DB3
VI = 1.4Vp-p
Crosstalk = 20log
VO
VI
GND
–20
–30
–40
–50
–60
MPC100AU
MPC100AP
–70
–80
150Ω
DB4
IN3 is connected to GND
IN4
–90
MPC100
1M
10M
100M
300M
Frequency (Hz)
FIGURE 3. Channel Crosstalk—Grounded Input.
10
150Ω
0
DB1
SEL1
SEL2
SEL3
SEL4
50Ω
150Ω IN
2
VI
50Ω
0
0
1
0
–10
Crosstalk (dB)
IN1
GND
DB2
15Ω
GND
180Ω
50Ω
50Ω
BUF601
VO
22pF
200Ω IN
3
DB3
VI = 1.4Vp-p
Crosstalk = 20log
VO
VI
MPC100AP
–20
–30
–40
–50
–60
GND
MPC100AU
–70
150Ω
DB4
–80
IN3 is connected with 150Ω + 50Ω to GND
IN4
–90
MPC100
1M
10M
100M
300M
Frequency (Hz)
FIGURE 4. Channel Crosstalk—150Ω Input Resistor.
10
0
150Ω
DB1
SEL1
SEL2
SEL3
SEL4
GND
50Ω
150Ω
VI
50Ω
IN2
0
0
0
0
–10
Crosstalk (dB)
IN1
DB2
180Ω
GND
50Ω
50Ω
BUF601
VO
150Ω
IN3
VI = 1.4Vp-p
V
Crosstalk = 20log O
VI
DB3
–20
MPC100AU
–30
–40
–50
–60
–70
GND
–80
150Ω
MPC100AP
–90
DB4
IN4
1M
10M
100M
300M
MPC100
Frequency (Hz)
FIGURE 5. Off Isolation.
®
11
MPC100
2.2µ
470p
–5V
IN13
75Ω
75Ω
75Ω
150Ω
150Ω
150Ω
1
14
2
13
3
12
4
11
5
10
6
9
22Ω
IN16
75Ω
150Ω
7
8
MPC100
2.2µ
470p
+5V
2.2µ
0.1µF
16
470p
VCC
15
14
IN13
75Ω
150Ω
1
14
2
13
13
12
75Ω
150Ω
11
10
3
12
9
75Ω
150Ω
75Ω
150Ω
4
11
5
10
6
9
22Ω
7
Y0
A0
Y1
A1
1
A0
2
A1
3
A3
74HC
237 CS1 6
Y2
Y3
Y4
CS2
A3
CS
5
+5V
Y5
Y6
Y7
LE
GND
4
IN16
7
8
MPC100
2.2µ
470p
2.2µ
470p
IN13
75Ω
150Ω
1
14
2
13
3
12
+5V
0.1µF
75Ω
150Ω
16
VCC
4
11
5
10
22Ω
15
14
75Ω
150Ω
13
6
9
7
8
12
IN16
11
75Ω
150Ω
10
9
MPC100
7
2.2µ
Y0
A0
Y1
A1
1
2
3
A2
74HC
237 CS2 5
Y2
Y3
Y4
CS1
6
Y5
Y6
Y7
GND
LE
4
470p
2.2µ
470p
IN13
75Ω
150Ω
1
14
2
13
3
12
+5V
75Ω
75Ω
150Ω
150Ω
4
11
5
10
2.2µ
10n
22Ω
150Ω
3
2
7
+
OPA623
4
–
75Ω
6
Out
–5V
220Ω
6
9
2.2µ
220Ω
IN16
75Ω
150Ω
7
8
MPC100
2.2µ
470p
+5V
FIGURE 6. Video Distribution Field.
®
MPC100
12
10n
+5V
2.2µ
+5V
0.1µ
10
470p
BUF600
+5V
In
180Ω
4
1
+1
150Ω
8
1
DB1
5
–5V
75Ω
150Ω
150Ω
13
14 Y1
9
13 Y2
3
8
12 Y3
5
1
A0
2
74HC
237
A1
A2
3
150Ω
CS1
DB2
11
4
75Ω
R-2R
Ladder
Network
15 Y0
2
75Ω
150Ω
4
8 5
LE GND CS2
14
5
+5V
150Ω
3 +
7
OPA623
2
4
–
DB3
75Ω
6
Out
–5V
390Ω
6
75Ω
390 Ω
75Ω
150Ω
7
DB4
MPC100
12
2.2µ
470p
CS
A1
A0
2
3
4
0
0
0
2
1
0
0
0
0
0
1
1
0
1
0
0
0
1
0
0.5
0
0
1
0
0
1
1
0.25
0
0
0
1
1
X
X
0
0
0
0
0
GAIN SEL1
–5V
FIGURE 7. Digital Gain Control.
+5V
0.1µ
16
+5V
4
8
5
VCC LE GND CS2
2.2µ
10
470p
15 Y0
1
14 Y1
2
13 Y2
3
12 Y3
5
A0
A1
A2
14
In1
150Ω
1
DB1
50Ω
CS1
13
9
2
8
In2
150Ω
3
DB2
11
4
In3
12 Bit
10MHz
A/D Converter
+5V
50Ω
150Ω
150Ω
3 +
2
5
–
DB3
220Ω
50Ω
7
OPA620
6
Signal
Input
4
–5V
6
220Ω
ADS804
In4
150Ω
7
DB4
50Ω
MPC100
12
2.2µ
470p
–5V
FIGURE 8. High Speed Data Acquisition System.
®
13
MPC100
150Ω
R
1
DB1
–5V
+5V
2.2µ
2.2µ
2
CH1 G
150Ω
470p
3
10n
12
DB2
B
4
150Ω
11
75Ω
150Ω
5
10
DB3
75Ω
6
OPA623
R
4
–
390Ω
470p
6
150Ω
2
2.2µ
7
3 +
2.2µ
390Ω
10n
+5V
7
DB4
–5V
MPC100
9
150Ω
R
1
10
13
14
DB1
–5V
+5V
2.2µ
2.2µ
2
CH2 G
150Ω
470p
3
10n
12
DB2
B
4
75Ω
150Ω
150Ω
11
5
10
DB3
2
2.2µ
7
3 +
OPA623
75Ω
6
G
4
–
390Ω
2.2µ
470p
6
390Ω
10n
150Ω
+5V
7
DB4
–5V
MPC100
9
R
10
13
+5V
14
5
16
CS1
CS
VCC
A0 1
15 Y0
A0
CH3 G
74HC
237
14 Y1
B
75Ω
9
150Ω
1
10
13
13 Y2
A9 3
12 Y3
LE 4
CS2 GND
5
8
14
DB1
–5V
2.2µ
2
3
470p
DB2
4
R
150Ω
5
CH4 G
DB3
10n
12
150Ω
11
10
2.2µ
7
3 +
2
OPA623
75Ω
6
B
4
–
390Ω
2.2µ
470p
6
390Ω
B
10n
150Ω
7
+5V
DB4
–5V
75Ω
MPC100
FIGURE 9. Distribution Field for High Resolution Graphic Cards, Cameras.
®
MPC100
14
A1
+5V
2.2µ
150Ω
A1 2
Out
50Ω
VI
In
RO1
RI
150Ω
ROUT
RO1
DUT
RB
51Ω
VO
+1
400MHz
Scope
50Ω
BOUT
RIN =
50Ω
50Ω
COUT
DB1 to DB4
RIN =
50Ω
BUF601
Pulse
Generator
FIGURE 10. Test Circuit Pulse Response.
MPC100
OPA623
VIN
75Ω
Generator
150Ω
150Ω
4
DUT
RIN =
75Ω
3
75Ω
10kΩ
+
75Ω
8
Video
Analyzer
75Ω
–
RIN =
75Ω
390Ω
DB1 to DB4
4.43MHz
390Ω
VDC
FIGURE 11. Test Circuit Differential Gain and Phase.
Out
50Ω
Generator
VI
In
RO1
RI
150Ω
ROUT
RO1
DUT
+1
RB
51Ω
VO
Spectrum
Analyzer
50Ω
BOUT
RIN =
50Ω
50Ω
COUT
DB1 to DB4
RIN =
50Ω
BUF601
FIGURE 12. Test Circuit Frequency Response.
MPC100
SEL Inputs
MPC100
SEL Inputs
SER In
2
1
3
5
4
5
6
D
3
7
1
7
14 13 12 11
Parallel Out
HC4094
1
15
3
5
MPC100
SEL Inputs
7
SER 3
Out
1
3
5
4
5
6
MPC100
SEL Inputs
7
1
7
14 13 12 11
Parallel Out
HC4094
2
3
1
15
3
5
MPC100
SEL Inputs
7
1
3
5
4
5
6
MPC100
SEL Inputs
7
1
7
14 13 12 11
Parallel Out
HC4094
2
SER 3
•••
Out
3
1
3
5
7
SER 3
Out
15
Clock
STR
OE
FIGURE 13. Serial Bus-Controlled Distribution Field.
®
15
MPC100
IMPORTANT NOTICE
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accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
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Copyright  2000, Texas Instruments Incorporated
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