Fairchild FMMT5179TA Sot23 npn silicon planar high frequency transistor Datasheet

SOT23 NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
FMMT5179
ISSUE 3 - JANUARY 1996
FEATURES
* High fT=900MHz Min
* Max capacitance=1pF
* Low noise 4.5dB
TYPICAL CHARACTERISTICS
200
1.0
VCE=1V
VCE=1V
175°C
VBE - (Volts)
hFE -Gain
25°C
-55°C
0.6
0.4
100°C
175°C
0.2
0.1
1
10
0
100
0.1
1
IC - (mA)
IC - (mA)
hFE v IC
VBE(on) v IC
1500
1.2
VCE=6V
f=100MHz
10
100
IE=0
f=1MHz
CCB - (pF)
fT - (MHz)
500
0.1
1
10
100
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
2.5
V
Continuous Collector Current
IC
50
mA
Power Dissipation
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
0.8
PARAMETER
SYMBOL
MIN.
0.6
Collector-Emitter Sustaining
Voltage
VCEO(SUS)
12
V
IC= 3mA, IB=0
Collector-Base Breakdown
Voltage
V(BR)CBO
20
V
IC= 1µA, IE=0
Emitter-Base Breakdown
Voltage
V(BR)EBO
2.5
V
IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
µA
µA
VCB=15V, IE=0
VCB=15V, IE=0, Tamb=150°C
Static Forward Current
Transfer Ratio
hFE
Collector-Emitter Saturation
Voltage
VCE(sat)
0.4
V
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
V
IC=10mA, IB=1mA
Transition Frequency
fT
Collector-Base Capacitance
Ccb
Small Signal Current Gain
hfe
0.4
0.2
0
PARAMETER
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.0
1000
SOT23
ABSOLUTE MAXIMUM RATINGS.
50
0
B
PARTMARKING DETAIL - 179
25°C
100°C
100
E
C
-55°C
0.8
150
FMMT5179
0
0.1
1
IC - (mA)
VCB - (Volts)
fT v IC
CCB v VCB
10
30
Collector Base Time Constant rb’Cc
Noise Figure
NF
Common-Emitter Amplifier
Power Gain
Gpe
MAX.
0.02
1.0
25
900
250
IC=3mA, VCE=1V
2000
MHz
IC=5mA, VCE=6V, f=100MHz
1
pF
IE=0, VCB=10V, f=1MHz
25
300
3
14
ps
IE=2mA, VCB=6V, f=31.9MHz
4.5
dB
IC=1.5mA, VCE=6V
RS=50Ω, f=200MHz
dB
IC=5mA, VCE=6V
f=200MHz
15
Spice parameter data is available upon request for this device
3 - 170
UNIT CONDITIONS.
3 - 169
IC=2mA, VCE=6V, f=1KHz
SOT23 NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
FMMT5179
ISSUE 3 - JANUARY 1996
FEATURES
* High fT=900MHz Min
* Max capacitance=1pF
* Low noise 4.5dB
TYPICAL CHARACTERISTICS
200
1.0
VCE=1V
VCE=1V
175°C
VBE - (Volts)
hFE -Gain
25°C
-55°C
0.6
0.4
100°C
175°C
0.2
0.1
1
10
0
100
0.1
1
IC - (mA)
IC - (mA)
hFE v IC
VBE(on) v IC
1500
1.2
VCE=6V
f=100MHz
10
100
IE=0
f=1MHz
CCB - (pF)
fT - (MHz)
500
0.1
1
10
100
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
2.5
V
Continuous Collector Current
IC
50
mA
Power Dissipation
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
0.8
PARAMETER
SYMBOL
MIN.
0.6
Collector-Emitter Sustaining
Voltage
VCEO(SUS)
12
V
IC= 3mA, IB=0
Collector-Base Breakdown
Voltage
V(BR)CBO
20
V
IC= 1µA, IE=0
Emitter-Base Breakdown
Voltage
V(BR)EBO
2.5
V
IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
µA
µA
VCB=15V, IE=0
VCB=15V, IE=0, Tamb=150°C
Static Forward Current
Transfer Ratio
hFE
Collector-Emitter Saturation
Voltage
VCE(sat)
0.4
V
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
V
IC=10mA, IB=1mA
Transition Frequency
fT
Collector-Base Capacitance
Ccb
Small Signal Current Gain
hfe
0.4
0.2
0
PARAMETER
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.0
1000
SOT23
ABSOLUTE MAXIMUM RATINGS.
50
0
B
PARTMARKING DETAIL - 179
25°C
100°C
100
E
C
-55°C
0.8
150
FMMT5179
0
0.1
1
IC - (mA)
VCB - (Volts)
fT v IC
CCB v VCB
10
30
Collector Base Time Constant rb’Cc
Noise Figure
NF
Common-Emitter Amplifier
Power Gain
Gpe
MAX.
0.02
1.0
25
900
250
IC=3mA, VCE=1V
2000
MHz
IC=5mA, VCE=6V, f=100MHz
1
pF
IE=0, VCB=10V, f=1MHz
25
300
3
14
ps
IE=2mA, VCB=6V, f=31.9MHz
4.5
dB
IC=1.5mA, VCE=6V
RS=50Ω, f=200MHz
dB
IC=5mA, VCE=6V
f=200MHz
15
Spice parameter data is available upon request for this device
3 - 170
UNIT CONDITIONS.
3 - 169
IC=2mA, VCE=6V, f=1KHz
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