Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected]. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FSBB15CH120DF Motion SPM® 3 Series Features General Description • UL Certified No. E209204 (UL1557) FSBB15CH120DF is an advanced Motion SPM® 3 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, thermal monitoring of drive IC, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logiclevel gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. • 1200 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low-Loss, Short-Circuit Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Dedicated Vs Pins Simplify PCB Layout • Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing • Single-Grounded Power Supply • LVIC Temperature-Sensing Built-In for Temperature Monitoring • Isolation Rating: 2500 Vrms / 1 min. Applications • Motion Control - Industrial Motor (AC 400V Class) Related Resources • AN-9095 - Motion SPM® 3 Series Users Guide • AN-9086 - SPM®3 Package Mounting Guide Figure 1. 3D Package Drawing (Click to Activate 3D Content) Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FSBB15CH120DF FSBB15CH120DF SPMMF-027 Rail 10 © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 1 www.fairchildsemi.com www.onsemi.com FSBB15CH120DF Motion SPM® 3 Series February 2017 FSBB15CH120DF Motion SPM® 3 Series Integrated Power Functions • 1200 V - 15 A IGBT inverter for three-phase DC / AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out Protection (UVLO) Note: Available bootstrap circuit example is given in Figures 5 and 15 • For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out Protection (UVLO) • Fault signaling: corresponding to UVLO (low-side supply) and SC faults • Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration Figure 2. Top View © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 2 www.fairchildsemi.com www.onsemi.com FSBB15CH120DF Motion SPM® 3 Series Pin Descriptions Pin Number Pin Name 1 VCC(L) Pin Description Low-Side Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 3 IN(UL) Signal Input for Low-Side U-Phase 4 IN(VL) Signal Input for Low-Side V-Phase 5 IN(WL) Signal Input for Low-Side W-Phase 6 VFO Fault Output 7 VTS Output for LVIC Temperature Sensing Voltage Output Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input 8 CSC 9 IN(UH) 10 VCC(UH) 11 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving 12 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving 13 IN(VH) Signal Input for High-Side V-Phase 14 VCC(VH) 15 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving 16 VS(V) High-Side Bias Voltage Ground for V Phase IGBT Driving 17 IN(WH) 18 VCC(WH) 19 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving 20 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving 21 NU Negative DC-Link Input for U-Phase 22 NV Negative DC-Link Input for V-Phase 23 NW Negative DC-Link Input for W-Phase 24 U Output for U-Phase 25 V Output for V-Phase 26 W Output for W-Phase 27 P Positive DC-Link Input Signal Input for High-Side U-Phase High-Side Common Bias Voltage for IC and IGBTs Driving High-Side Common Bias Voltage for IC and IGBTs Driving Signal Input for High-Side W-Phase High-Side Common Bias Voltage for IC and IGBTs Driving © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 3 www.fairchildsemi.com www.onsemi.com FSBB15CH120DF Motion SPM® 3 Series Internal Equivalent Circuit and Input/Output Pins (19) VB (W) (18) VCC (WH) (17) IN(WH ) P (27) VB VC C COM IN OUT VS W (26) (20) VS (W) (15) VB (V) (14) VCC (V H) (13) IN(V H) (16) VS (V ) (11) VB (U) (10) VCC (UH) (9) IN(UH) ( 12) VS (U) (8) CS C (7) VT S (6) VF O (5) IN(WL ) VB VC C COM IN OUT VS V (25) VB VC C COM IN CSC OUT VS U (24) OUT VTS NW (23) VFO IN OUT (4) IN(V L) NV (22) IN (3) IN(UL ) IN (2) COM COM (1) VCC(L) OUT VC C NU (21) Figure 3. Internal Block Diagram Notes: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT. © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 4 www.fairchildsemi.com www.onsemi.com Inverter Part Symbol VPN VPN(Surge) VCES Parameter Conditions Supply Voltage Applied between P - NU, NV, NW Supply Voltage (Surge) Applied between P - NU, NV, NW Rating Unit 900 V Collector - Emitter Voltage 1000 V 1200 V ± IC Each IGBT Collector Current TC = 25°C, TJ 150°C (Note 4) 15 A ± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ 150°C, Under 1 ms Pulse Width (Note 4) 30 A PC Collector Dissipation TC = 25°C per One Chip (Note 4) 89 W TJ Operating Junction Temperature -40 ~ 150 °C Rating Unit Control Part Symbol Parameter Conditions VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3 ~ VCC+0.3 V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC+0.3 V IFO Fault Output Current Sink Current at VFO pin VSC Current Sensing Input Voltage Applied between CSC - COM 2 mA -0.3 ~ VCC+0.3 V Conditions Rating Unit Self Protection Supply Voltage Limit (Short Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C, Non-repetitive, < 2 s 800 V Module Case Operation Temperature See Figure 2 -40 ~ 125 °C Total System Symbol VPN(PROT) TC Parameter TSTG Storage Temperature VISO Isolation Voltage -40 ~ 125 °C 2500 Vrms Typ. Max. Unit 60 Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat Sink Plate Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Parameter Junction to Case Thermal Resistance (Note 5) Conditions Min. Inverter IGBT part (per 1 / 6 module) - - 1.40 °C / W Inverter FWD part (per 1 / 6 module) - - 1.93 °C / W Note: 4. These values had been made an acquisition by the calculation considered to design factor. 5. For the measurement point of case temperature (TC), please refer to Figure 2. © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 5 www.fairchildsemi.com www.onsemi.com FSBB15CH120DF Motion SPM® 3 Series Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified) Inverter Part Symbol VCE(SAT) VF HS tON Parameter Conditions Min. Typ. Max. Unit Collector - Emitter Saturation VCC = VBS = 15 V Voltage VIN = 5 V IC = 15 A, TJ = 25°C - 2.00 2.60 V FWDi Forward Voltage VIN = 0 V IF = 15 A, TJ = 25°C - 1.90 2.50 V Switching Times VPN = 600 V, VCC = 15 V, IC = 15 A TJ = 25°C VIN = 0 V 5 V, Inductive Load See Figure 5 (Note 6) 0.50 1.00 1.55 s - 0.20 0.60 s - 1.20 1.75 s - 0.20 0.60 s - 0.25 - s VPN = 600 V, VCC = 15 V, IC = 15 A TJ = 25°C VIN = 0 V 5 V, Inductive Load See Figure 5 (Note 6) 0.35 0.85 1.45 s - 0.20 0.60 s - 1.05 1.65 s - 0.20 0.60 s - 0.25 - s - - 5 mA tC(ON) tOFF tC(OFF) trr LS tON tC(ON) tOFF tC(OFF) trr ICES Collector - Emitter Leakage VCE = VCES Current Note: 6. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 100% I C 100% I C t rr V CE IC IC V CE V IN V IN t ON t OFF t C(ON) t C(OFF) 10% I C V IN(ON) 90% I C V IN(OFF) 10% V CE 10% V CE 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 6 www.fairchildsemi.com www.onsemi.com FSBB15CH120DF Motion SPM® 3 Series Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) IC P DBS CBS VCC COM RBS IN VB LS Switching OUT VS HS Switching LS Switching VCC VFO VTS VCC 0V 4.7kΩ 600V HS Switching OUT CSC V COM +15V V Inductor IN VIN 5V VPN U,V,W NU,V,W V +5V Figure 5. Example Circuit for Switching Test Inductive Load, VPN = 600 V, VCC = 15 V, TJ = 25℃ 2800 Inductive Load, VPN = 600 V, VCC = 15 V, TJ = 150℃ 2600 IGBT Turn-ON, Eon 2600 IGBT Turn-ON, Eon 2400 IGBT Turn-OFF, Eoff 2400 IGBT Turn-OFF, Eoff 2200 FRD Turn-OFF, Erec 2200 FRD Turn-OFF, Erec 2000 SWITCHING LOSS, ESW [uJ] SWITCHING LOSS, ESW [uJ] 2800 1800 1600 1400 1200 1000 800 600 400 200 0 0.0 2000 1800 1600 1400 1200 1000 800 600 400 200 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 0 0.0 16.5 COLLECTOR CURRENT, Ic [AMPERES] 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 16.5 COLLECTOR CURRENT, Ic [AMPERES] Figure 6. Switching Loss Characteristics Figure 7. Temperature Profile of VTS (Typical) © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 7 www.fairchildsemi.com www.onsemi.com FSBB15CH120DF Motion SPM® 3 Series One-Leg Diagram of SPM 3 Symbol IQCCH Parameter Quiescent VCC Supply Current IQCCL IPCCH Operating VCC Supply Current IPCCL Conditions Min. Typ. Max. Unit VCC(UH, VH, WH) = 15 V, IN(UH,VH,WH) = 0 V VCC(UH) - COM, VCC(VH) - COM, VCC(WH) - COM - - 0.15 mA VCC(L) = 15 V, IN(UL,VL, WL) = 0 V VCC(L) - COM - - 5.00 mA VCC(UH, VH, WH) = 15 V, fPWM = VCC(UH) - COM, 20 kHz, duty = 50%, applied to VCC(VH) - COM, one PWM signal input for VCC(WH) - COM High- Side - - 0.30 mA VCC(L) = 15V, fPWM = 20 kHz, VCC(L) - COM duty = 50%, applied to one PWM signal input for LowSide - - 10.0 mA IQBS Quiescent VBS Supply Current VBS = 15 V, IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) - - 0.30 mA IPBS Operating VBS Supply Current VB(U) - VS(U), VCC = VBS = 15 V, fPWM = 20 kHz, duty = 50%, VB(V) - VS(V), applied to one PWM signal VB(W) - VS(W) input for High-Side - - 6.0 mA VFOH Fault Output Voltage VCC = 15 V, VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up 4.5 - - V VCC = 15 V, VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up - - 0.5 V 0.45 0.50 0.55 V 10.3 - 12.8 V 10.8 - 13.3 V VFOL VSC(ref) Short Circuit Trip Level UVCCD UVCCR Supply Circuit Under- Detection Level Voltage Protection Reset Level UVBSD Detection Level 9.5 - 12.0 V UVBSR Reset Level 10.0 - 12.5 V VCC = 15 V (Note 7) CSC - COM(L) tFOD Fault-Out Pulse Width 50 - - s VTS LVIC Temperature VCC(L) = 15 V, TLVIC = 25°C (Note 8) Sensing Voltage Output See Figure 7 880 940 1080 mV - - 2.6 V 0.8 - - V VIN(ON) ON Threshold Voltage VIN(OFF) OFF Threshold Voltage Applied between IN(UH, VH, WH) - COM, IN(UL, VL, WL) - COM Note: 7. Short-circuit current protection is functioning only at the low-sides. 8. TLVIC is the temperature of LVIC itself. VTS is only for sensing temperature of LVIC and can not shutdown IGBTs automatically. © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 8 www.fairchildsemi.com www.onsemi.com FSBB15CH120DF Motion SPM® 3 Series Control Part Symbol Parameter Value Conditions Unit Min. Typ. Max. 300 600 800 V VPN Supply Voltage Applied between P - NU, NV, NW VCC Control Supply Voltage Applied between VCC(UH, COM - COM, VCC(L) - 13.5 15.0 16.5 V VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) VS(W) 13.0 15.0 18.5 V -1 - 1 V / s 2.0 - - s - 20 kHz 5 V - s VH, WH) dVCC / dt, Control Supply dVBS / dt Variation tdead Blanking Time for Preventing Arm - Short For Each Input Signal fPWM PWM Input Signal -40C TC 125°C, -40C TJ 150°C - VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM (Including Surge Voltage) -5 VCC = VBS = 15 V, IC 30 A, Wiring Inductance between NU, V, W and DC Link N < 10nH (Note 9) 2.0 PWIN(ON) Minimum Input Pulse Width PWIN(OFF) TJ Junction Temperature - 2.0 - - -40 - 150 C Note: 9. This product might not make response if input pulse width is less than the recommended value. Allowable Output Current, IOrms [Arms] 14 fSW = 5 kHz 12 10 8 6 fSW = 15 kHz VDC = 600 V, VCC = VBS = 15 V 4 Tj = 150℃ , TC = 125℃ M.I. = 0.9, P.F. = 0.8 Sinusoidal PWM 2 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Case Temperature, TC [℃] Figure 8. Allowable Maximum Output Current Note: 10. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition. © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 9 www.fairchildsemi.com www.onsemi.com FSBB15CH120DF Motion SPM® 3 Series Recommended Operating Conditions Parameter Limits Conditions Min. Typ. Max. 0 - +150 Unit m Device Flatness See Figure 9 Mounting Torque Mounting Screw: M3 Recommended 0.7 N • m 0.6 0.7 0.8 N•m See Figure 10 Recommended 7.1 kg • cm 6.2 7.1 8.1 kg • cm Terminal Pulling Strength Load 19.6 N 10 - - s Terminal Bending Strength Load 9.8 N, 90 deg. bend 2 - - times - 15 - g Weight (+) (+) Figure 9. Flatness Measurement Position 2 Pre - Screwing : 1 2 Final Screwing : 2 1 1 Figure 10. Mounting Screws Torque Order Note: 11. Do not make over torque when mounting screws. Much mounting torque may cause DBC cracks, as well as bolts and Al heat-sink destruction. 12. Avoid one-sided tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the DBC substrate of package to be damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating. © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 10 www.fairchildsemi.com www.onsemi.com FSBB15CH120DF Motion SPM® 3 Series Mechanical Characteristics and Ratings FSBB15CH120DF Motion SPM® 3 Series Time Charts of SPMs Protective Function Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal Figure 11. Under-Voltage Protection (Low-Side) a1: Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2: Normal operation: IGBT ON and carrying current. a3: Under voltage detection (UVCCD). a4: IGBT OFF in spite of control input condition. a5: Fault output operation starts with a fixed pulse width. a6: Under voltage reset (UVCCR). a7: Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH. Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b5 b1 UVBSD b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal Figure 12. Under-Voltage Protection (High-Side) b1: Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2: Normal operation: IGBT ON and carrying current. b3: Under voltage detection (UVBSD). b4: IGBT OFF in spite of control input condition, but there is no fault output signal. b5: Under voltage reset (UVBSR). b6: Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH. © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 11 www.fairchildsemi.com www.onsemi.com c6 Protection Circuit state SET Internal IGBT Gate-Emitter Voltage FSBB15CH120DF Motion SPM® 3 Series Lower Arms Control Input c7 RESET c4 c3 c2 Internal delay at protection circuit SC current trip level c8 c1 Output Current SC reference voltage Sensing Voltage of Sense Resistor RC filter circuit Fault Output Signal c5 time constant delay Figure 13. Short-Circuit Current Protection (Low-Side Operation only) (with the external sense resistance and RC filter connection) c1: Normal operation: IGBT ON and carrying current. c2: Short circuit current detection (SC trigger). c3: All low-side IGBT’s gate are hard interrupted. c4: All low-side IGBTs turn OFF. c5: Fault output operation starts with a fixed pulse width. c6: Input HIGH: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c7: Fault output operation finishes, but IGBT doesn’t turn on until triggering next signal from LOW to HIGH. c8: Normal operation: IGBT ON and carrying current. Input/Output Interface Circuit +5V (MCU or Control power ) SPM 4.7 kΩ IN(UH) , IN (VH) , IN(WH) IN (UL) , IN (VL) , IN(WL) MCU VFO COM Figure 14. Recommended CPU I/O Interface Circuit Note: 13. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The input signal section of the Motion SPM 3 product integrates 5 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 12 www.fairchildsemi.com www.onsemi.com P (27) (17) IN( WH) IN (18) VCC( WH) R2 VCC C4 D1 C3 C4 COM OUT (19) VB( W) W (26) VS VB (20) VS( W) D2 R1 (13) IN( VH) Gating VH IN (14) VCC( VH) R2 D1 C3 C4 D2 M C U VCC C4 R1 COM (15) VB( V) (16) V S(V) (9) IN( UH) Gating UH C1 C1 R2 C4 D1 C3 5V line C4 VS V (25) M IN VCC (10) V CC( UH) C1 OUT VB COM (11) V B(U) (12) VS( U) C7 OUT V DC U (24) VS VB D2 R3 VTS R6 B D C6 R1 CSC (7) VT S Fault R1 (5) IN(WL ) R1 (4) IN(VL) OUT V TS (6) VF O Gating WL Gating VL (8) CSC C5 NW (23) OUT NV (22) IN R4 (3) IN(UL ) Gating UL E IN C1 C1 C1 C1 (2) COM 15V line C1 COM (1) VCC( L) OUT VCC D2 C2 A V FO IN R1 R4 NU (21) Power GND Line R4 C4 C R5 W-Phase Current V-Phase Current U-Phase Current Input Signal for Short -Circuit Protection R5 Control GND Line R5 C5 C5 C5 Figure 15. Typical Application Circuit Note: 14. To avoid malfunction, the wiring of each input should be as short as possible. (Less than 2 - 3 cm) 15. VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 2 mA. Please refer to Figure 14. 16. Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull-down each input signal line to GND. RC coupling circuits should be adopted for the prevention of input signal oscillation. R1C1 time constant should be selected in the range 50 ~ 150 ns. (Recommended R1 = 100 Ω , C1 = 1 nF) 17. Each wiring pattern inductance of A point should be minimized (Recommend less than 10nH). Use the shunt resistor R4 of surface mounted (SMD) type to reduce wiring inductance. To prevent malfunction, wiring of point E should be connected to the terminal of the shunt resistor R4 as close as possible. 18. To prevent errors of the protection function, the wiring of B, C, and D point should be as short as possible. 19. In the short-circuit protection circuit, please select the R6C6 time constant in the range 1.5 ~ 2 s. Do enough evaluation on the real system because short-circuit protection time may vary wiring pattern layout and value of the R6C6 time constant. 20. Each capacitor should be mounted as close to the pins of the Motion SPM® 3 product as possible. 21. To prevent surge destruction, the wiring between the smoothing capacitor C7 and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive capacitor of around 0.1 ~ 0.22 F between the P & GND pins is recommended. 22. Relays are used at almost every systems of electrical equipment at industrial application. In these cases, there should be sufficient distance between the CPU and the relays. 23. The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals (Recommended zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω ). 24. C2 of around 7 times larger than bootstrap capacitor C3 is recommended. 25. Please choose the electrolytic capacitor with good temperature characteristic in C3. Also, choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and frequency characteristics in C4. © 2017 Semiconductor Components Industries, LLC FSBB15CH120DF • Rev. 1.0 13 www.fairchildsemi.com www.onsemi.com FSBB15CH120DF Motion SPM® 3 Series R1 Gating WH ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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