ON NSVBAS21HT3G High voltage switching diode Datasheet

BAS21HT1G, BAS21HT3G,
NSVBAS21HT1G,
NSVBAS21HT3G
High Voltage
Switching Diode
www.onsemi.com
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
HIGH VOLTAGE
SWITCHING DIODE
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Surge
Current, 60 Hz
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t=1s
Symbol
Value
Unit
VR
250
Vdc
VRRM
250
Vdc
IF
200
mAdc
IFRM
500
mA
IFSM(surge)
625
mAdc
IFSM
JS M G
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
200
mW
1.57
mW/°C
635
°C/W
RqJA
TJ, Tstg
°C
−55 to
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 Minimum Pad
June, 2016 − Rev. 11
SOD−323
CASE 477
STYLE 1
1
*Date Code orientation may vary depending upon manufacturing location.
Symbol
© Semiconductor Components Industries, LLC, 2016
MARKING
DIAGRAM
2
JS
M
G
20
20
10
4
1
Characteristic
Junction and Storage Temperature
Range
2
ANODE
A
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction−to−Ambient
1
CATHODE
1
ORDERING INFORMATION
Device
Package
Shipping†
BAS21HT1G,
NSVBAS21HT1G
SOD−323
(Pb−Free)
3000 / Tape & Reel
BAS21HT3G,
NSVBAS21HT3G
SOD−323
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAS21HT1/D
BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−
−
0.1
100
250
−
−
−
1000
1250
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
mAdc
IR
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
−
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 3.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G
TYPICAL CHARACTERISTICS
1200
1000
25°C
REVERSE CURRENT (nA)
FORWARD VOLTAGE (mV)
TA = −55°C
800
155°C
600
400
200
7000
6000
5000
4000
3000
6
5
4
3
2
TA = 25°C
1
0
1
1
10
100
TA = −55°C
1
1000
2
5
10
20
50
100
FORWARD CURRENT (mA)
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
200 300
25
1.0
Based on square wave currents
TJ = 25°C prior to surge
0.9
20
0.8
0.7
IFSM (A)
Cd, DIODE CAPACITANCE (pF)
TA = 155°C
0.6
15
10
0.5
5
0.4
0.3
0
1
2
3
4
5
6
7
0
8
0.001
0.01
0.1
1
VR, REVERSE VOLTAGE (V)
Tp (mSec)
Figure 4. Diode Capacitance
Figure 5. Maximum Non−repetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
www.onsemi.com
3
10
BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BAS21HT1/D
Similar pages