Panasonic LN155 Gaas infrared light emitting diode Datasheet

Infrared Light Emitting Diodes
LNA2603F (LN155)
GaAs Infrared Light Emitting Diode
Unit : mm
4.5±0.15
3.5±0.15
3.9±0.25
Features
Not soldered 0.8 max.
1.5±0.2
For optical control systems
High-power output, high-efficiency : PO = 6 mW (typ.)
(2.95)
Emitted light spectrum suited for silicon photodetectors :
λP = 940 nm (typ.)
2.1±0.15
1.6±0.15
0.8±0.1
12.8 min.
Long lifetime, high reliability
Thin side-view type package
0.45±0.15
2-1.2±0.3
2-0.45±0.15
1
2.54 2
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
*
Symbol
Ratings
Unit
Power dissipation
PD
160
mW
Forward current (DC)
IF
100
mA
1.5
A
3
V
*
Pulse forward current
IFP
Reverse voltage (DC)
VR
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
– 40 to +100
˚C
1: Anode
2: Cathode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Radiant power
PO
IF = 50mA
Peak emission wavelength
λP
IF = 50mA
Spectral half band width
∆λ
IF = 50mA
50
Forward voltage (DC)
VF
IF = 100mA
1.3
Reverse current (DC)
IR
VR = 3V
Capacitance between pins
Ct
VR = 0V, f = 1MHz
Rise time
tr
Fall time
tf
Half-power angle
θ
IFP = 100mA
The angle in which radiant intencity is 50%
3
typ
max
Unit
6
mW
940
nm
nm
1.6
V
10
µA
45
pF
1
µs
1
µs
80
deg.
Note) The part number in the parenthesis shows conventional part number.
1
Infrared Light Emitting Diodes
LNA2603F
IF — Ta
IFP — Duty cycle
120
tw = 10µs
Ta = 25˚C
Pulse forward current
60
40
20
0
– 25
0
20
40
60
80
10 –1
10 –2
10 –3
10 –2
100
IFP (mA)
1
10 –1
Ambient temperature Ta (˚C )
10
1
0
1
3
4
5
10
IF = 50mA
IF = 100mA
VF (V)
10 2
1.2
50mA
1mA
(1)
10
2
∆PO — Ta
VF — Ta
Forward voltage
Relative radiant power ∆PO
10 2
Forward voltage VF (V)
1.6
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
(2)
1
10 3
10 –1
10 2
10
tw = 10µs
f = 100Hz
Ta = 25˚C
Duty cycle (%)
∆PO — IFP
10 3
1
0.8
0.4
Relative radiant power ∆PO
Allowable forward current
80
10
Pulse forward current
IFP (A)
IF (mA)
10 2
100
IFP — VF
10 4
1
10 –1
1
10
10 2
10 3
0
– 40
10 4
Pulse forward current IFP (mA)
λP — Ta
1000
0
40
Relative radiant intensity (%)
Peak emission wavelength λP (nm)
940
920
900
– 40
0
40
80
Ambient temperature Ta (˚C )
2
120
10 –1
– 40
0
40
80
Ambient temperature Ta (˚C )
Spectral characteristics
Directivity characteristics
0˚
IF = 50mA
Ta = 25˚C
IF = 50mA
960
120
Ambient temperature Ta (˚C )
100
980
80
30˚
40˚
60
40
60
20˚
100
80
80
10˚
20
Relative radiant
intensity(%)
10 –2
50˚
60˚
70˚
80˚
90˚
100˚
40
110˚
120˚
20
0
860
130˚
140˚
900
940
980
1020 1060 1100
Wavelength λ (nm)
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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2001 MAR
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