NEC NP88N04CHE-S12-AZ Mos field effect transistor switching n-channel power mosfet Datasheet

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N04EHE, NP88N04KHE
NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP88N04EHE-E1-AY
Note1, 2
NP88N04EHE-E2-AY
Note1, 2
NP88N04KHE-E1-AY
Note1
NP88N04KHE-E2-AY
Note1
NP88N04CHE-S12-AZ
Note1, 2
NP88N04DHE-S12-AY
Note1, 2
NP88N04MHE-S18-AY
Note1
NP88N04NHE-S18-AY
Note1
LEAD PLATING
PACKING
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
Sn-Ag-Cu
Pure Sn (Tin)
TO-220 (MP-25) typ. 1.9 g
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
• Low input capacitance
(TO-262)
Ciss = 7300 pF TYP.
• Built-in gate protection diode
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14236EJ8V0DS00 (8th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2000, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
ID(DC)
±88
A
ID(pulse)
±352
A
Drain Current (DC) (TC = 25°C)
Drain Current (pulse)
Note1
Note2
Total Power Dissipation (TA = 25°C)
PT1
1.8
W
Total Power Dissipation (TC = 25°C)
PT2
288
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
Note3
IAS
75/88
A
Note3
EAS
562/232
mJ
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.52
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
2
Data Sheet D14236EJ8V0DS
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 44 A
30
60
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 44 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Rise Time
tr
S
3.4
4.3
mΩ
VDS = 25 V,
7300
11000
pF
VGS = 0 V,
1400
2100
pF
620
1120
pF
VDD = 20 V, ID = 44 A,
38
84
ns
VGS = 10 V,
27
68
ns
110
220
ns
32
80
ns
180
nC
f = 1 MHz
RG = 1 Ω
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 32 V,
120
QGS
VGS = 10 V,
30
nC
43
nC
IF = 88 A, VGS = 0 V
0.95
V
Gate to Source Charge
ID = 88 A
Gate to Drain Charge
QGD
Body Diode Forward Voltage
VF(S-D)
Reverse Recovery Time
trr
IF = 88 A, VGS = 0 V,
64
ns
Qrr
di/dt = 100 A/μs
99
nC
Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
IAS
90%
VDS
VGS
0
BVDSS
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
RL
VDD
Data Sheet D14236EJ8V0DS
3
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
350
100
80
60
40
20
0
0
25
50
75
300
250
200
150
100
50
0
100 125 150 175 200
0
25
TC - Case Temperature - °C
PW
ID(pulse)
10
0
1m
10
Po
D
Lim wer C
ite Dis
d
sip
a
μs
10
μs
s
ms
tio
n
10
1
Single pulse
TC = 25°C
0.1
1
0.1
100 125 150 175 200
800
=
EAS - Single Avalanche Energy - mJ
ID - Drain Current - A
100
d
ite
im V)
) L 10
n
o
S(
=
ID(DC)
RDVGS
(
75
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
50
TC - Case Temperature - °C
10
700
600 562 mJ
500
IAS = 75 A
88 A
400
300
232 mJ
200
100
100
VDS - Drain to Source Voltage - V
0
25
50
75
100
125
150
175
Starting Tch - Starting Channel Temperature - °C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 0.52°C/W
0.1
0.01
10 μ
Single pulse
TC = 25°C
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
4
Data Sheet D14236EJ8V0DS
10
100
1000
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
ID - Drain Current - A
ID - Drain Current - A
500
10
TA = −50°C
25°C
75°C
175°C
1
0.1
400
VGS = 10 V
300
200
100
0.01
2
3
4
VDS = 10 V
6
7
5
0
Pulsed
0.5
0
10
TA = 175°C
75°C
25°C
−50°C
0.1
0.01
0.01
0.1
10
1
100
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
15
10
5
0
VGS = 10 V
1
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
1
2.0
1.5
VDS - Drain to Source Voltage - V
VGS(th) - Gate to Source Threshold Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS - Gate to Source Voltage - V
1.0
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
5
ID = 44 A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
ID = 250 μA
4.0
3.0
2.0
1.0
0
−50
0
50
100
150
Tch - Channel Temperature - °C
ID - Drain Current - A
Data Sheet D14236EJ8V0DS
5
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure12. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
9
8
7
6
5
VGS = 10 V
4
1000
IF - Diode Forward Current - A
3
2
1
ID = 44 A
0
−50
50
0
100
VGS = 10 V
100
0V
10
1
0.1
0
150
Tch - Channel Temperature - °C
Figure14. CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1.0
0.5
VF(S-D) - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V
f = 1 MHz
10000
Ciss
Coss
1000
Crss
100
0.1
1
10
100
tf
td(off)
100
td(on)
tr
10
VDD = 20 V
VGS = 10 V
1 RG = 1 Ω
0.1
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1.0
10
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
1000
10
1
ID - Drain Current - A
VDS - Drain to Source Voltage - V
100
100
10
90
9
80
8
VDD = 32 V
20 V
8V
70
60
7
VGS
6
50
5
40
4
30
3
20
2
VDS
1
10
0
IF - Diode Forward Current - A
6
1.5
1000
100000
Ciss, Coss, Crss - Capacitance - pF
Pulsed
ID = 88 A
0
20
40
60
80
QG - Gate Charge - nC
Data Sheet D14236EJ8V0DS
100
0
120
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
PACKAGE DRAWINGS (Unit: mm)
Note
1.3 ± 0.2
10.0 ± 0.3
No plating
7.88 MIN.
4
2
3
1.4 ± 0.2
0.7 ± 0.2
2.54 TYP.
9.15 ± 0.3
8.0 TYP.
8.5 ± 0.2
1
5.7 ± 0.4
1.0 ± 0.5
4
4.45 ± 0.2
0.025 to
0.25
P.
.5R
0
TY
R
0.8
2.54 TYP.
P.
TY
0.5 ± 0.2
0.75 ± 0.2
0.5 ±
2.8 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
1.Gate
2.Drain
2.5
3.Source
15.5 MAX.
5.9 MIN.
4
1
0.75 ± 0.1
2.54 TYP.
1.3 ± 0.2
12.7 MIN.
6.0 MAX.
1 2 3
0.5 ± 0.2
2.8 ± 0.2
0.75 ± 0.3
2.54 TYP.
2
3
1.0 ± 0.5
10 TYP.
Note
4.8 MAX.
1.3 ± 0.2
8.5 ± 0.2
1.3 ± 0.2
4.Fin (Drain)
12.7 MIN.
4.8 MAX.
φ 3.6 ± 0.2
10.0 TYP.
1.3 ± 0.2
3
4)TO-262 (MP-25 Fin Cut)
4
8ο
0.25
Note
10.6 MAX.
0.2
0 to
2.54
3)TO-220 (MP-25)
1.3 ± 0.2
2.54 ± 0.25
4.8 MAX.
10 TYP.
1.35 ± 0.3
2)TO-263 (MP-25ZK)
15.25 ± 0.5
1)TO-263 (MP-25ZJ)
3.0 ± 0.3
<R>
0.5 ± 0.2
2.8 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note Not for new design
Data Sheet D14236EJ8V0DS
7
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
1 2 3
0.8 ± 0.1
0.5 ± 0.2
2.54 TYP.
2.5 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.3 ± 0.2
1.27 ± 0.2
3.1 ± 0.3
15.9 MAX.
1.27 ± 0.2
4
4.45 ± 0.2
10.1 ± 0.3
3
10.0 ± 0.2
13.7 ± 0.3
13.7 ± 0.3
1 2
4.45 ± 0.2
1.3 ± 0.2
3.1 ± 0.2
4
φ 3.8 ± 0.2
6.3 ± 0.3
2.8 ± 0.3
10.0 ± 0.2
1.2 ± 0.3
6)TO-262 (MP-25SK)
8.9 ± 0.2
5)TO-220 (MP-25K)
0.8 ± 0.1
0.5 ± 0.2
2.54 TYP.
2.54 TYP.
2.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Remark
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D14236EJ8V0DS
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
<R>
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
<R>
Reel side
MARKING INFORMATION
NEC
88N04
HE
<R>
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Maximum temperature (Package's surface temperature): 260°C or below
MP-25ZJ, MP-25ZK
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Recommended
Condition Symbol
IR60-00-3
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Wave soldering
Maximum temperature (Solder temperature): 260°C or below
MP-25, MP-25K, MP-25SK,
Time: 10 seconds or less
MP-25 Fin Cut
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
MP-25ZJ, MP-25ZK,
Time (per side of the device): 3 seconds or less
MP-25K, MP-25SK
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 300°C or below
MP-25, MP-25 Fin Cut
Time (per side of the device): 3 seconds or less
THDWS
P350
P300
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D14236EJ8V0DS
9
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
• The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
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M8E 02. 11-1
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