DMT10H025SSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID Max TA = +25°C 23mΩ @ VGS = 10V 7.4A 30mΩ @ VGS = 6V 6.5A BVDSS 100V Features and Benefits Description and Applications 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) High Frequency Switching Synchronous Rectification DC-DC Converters SO-8 S D S D S D G D Top View Internal Schematic Top View D G S Equivalent Circuit Ordering Information (Note 4) Part Number DMT10H025SSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 8 5 = Manufacturer’s Marking T1H025SS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 17 = 2017) WW = Week (01 to 53) T1H025SS YY WW 1 DMT10H025SSS Document number: DS40133 Rev. 2 - 2 4 1 of 7 www.diodes.com September 2017 © Diodes Incorporated DMT10H025SSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C Value 100 ±20 7.4 5.9 45 3.2 45 25 31.25 Unit V V Value 1.4 91 1.9 65 12.9 8.5 -55 to +150 Unit W °C/W W °C/W W °C/W °C ID Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH IDM IS ISM IAS EAS A A A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C TA = +25°C TC = +25°C Symbol PD RJA PD RθJA PD RθJC TJ, TSTG Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) — 17 22 0.9 4 23 30 1.2 V Static Drain-Source On-Resistance 2 — — — V VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 6V, ID = 12.5A VGS = 0V, IS = 20A 1544 250 20.4 1.26 21.4 13.4 4.6 6.0 8.2 11.2 27.5 13.7 37.5 — — — — — — — — — — — — — pF VDS = 50V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 50V, ID = 20A tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — ns VDD = 50V, VGS = 10V, ID = 20A, Rg = 11Ω QRR — 50.9 — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 6V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd mΩ ns nC Test Condition IF = 20A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT10H025SSS Document number: DS40133 Rev. 2 - 2 2 of 7 www.diodes.com September 2017 © Diodes Incorporated DMT10H025SSS 30 30.0 VDS=5V VGS = 10.0V VGS = 4.5V VGS = 8.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 25 20.0 VGS = 5.0V 15.0 VGS = 4.0V 10.0 20 15 TJ= 150℃ 10 TJ= 125℃ TJ= 85℃ 5 5.0 TJ= 25℃ VGS = 3.5V 0.0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1.Typical Output Characteristic 0.03 VGS = 10V 0.025 VGS = 6.0V 0.02 1.5 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.015 0.01 TJ= 150℃ 0.03 TJ= 125℃ 0.025 TJ= 85℃ 0.02 0.015 TJ= 25℃ 0.01 TJ= -55℃ 0.005 5 0.08 0.07 0.06 0.05 ID = 20.0A 0.04 ID = 12.5A 0.03 0.02 0.01 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS=10V 0.035 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.09 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.04 2 0.1 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TJ= -55℃ 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2 1.8 VGS = 10V, ID = 20A 1.6 1.4 1.2 VGS = 6.0V, ID = 12.5A 1 0.8 0.6 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMT10H025SSS Document number: DS40133 Rev. 2 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature September 2017 © Diodes Incorporated 0.05 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMT10H025SSS 0.04 0.03 VGS = 6.0V, ID = 12.5A 0.02 VGS = 10V, ID = 20A 0.01 3.3 3 2.7 ID = 1mA 2.4 2.1 ID = 250μA 1.8 1.5 1.2 0.9 0 -50 -25 0 25 50 75 100 125 -50 150 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. JunctionTemperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 10000 30 CT, JUNCTION CAPACITANCE (pF) VGS = 0V IS, SOURCE CURRENT (A) 150 25 20 15 10 TJ= 150℃ 5 TJ= 125℃ TJ= 85℃ TJ= 25℃ f=1MHz 1000 TJ= -55℃ Coss 100 Crss 10 1 0 0 Ciss 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 20 40 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 80 100 RDS(ON) LIMITED ID, DRAIN CURRENT (A) VGS (V) 8 6 4 VDS = 50V, ID = 20A PW =100μs 1 PW =10ms PW =100ms 0.1 2 0.01 0 0.001 0 2 4 6 8 10 12 14 16 18 20 22 Qg (nC) Figure 11. Gate Charge DMT10H025SSS Document number: DS40133 Rev. 2 - 2 4 of 7 www.diodes.com PW =1ms 10 TJ(MAX)=150℃ TC=25℃ Single Pulse DUT on 1*MRP board VGS=10V 0.1 PW =1s PW =10s DC 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 1000 September 2017 © Diodes Incorporated DMT10H025SSS r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 0.1 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA= 91℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMT10H025SSS Document number: DS40133 Rev. 2 - 2 5 of 7 www.diodes.com September 2017 © Diodes Incorporated DMT10H025SSS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 E 1 b E1 h ) ides All s 9° ( 1 0. e c 4° ± 3° A R Q 45° 7° A1 L E0 Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMT10H025SSS Document number: DS40133 Rev. 2 - 2 X 6 of 7 www.diodes.com September 2017 © Diodes Incorporated DMT10H025SSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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