CJP71N90 T0-220-3L Plastic-Encapsulate MOSFETS CJP71N90 N-Channel MOSFET TO-220-3L DESCRIPTION The CJP71N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications. 1. GATE FEATURES z Lead free product is acquired z Special process technology for high ESD capability z High density cell design for ultra low RDS(on) z Good stability and uniformity with high EAS z Excellent package for good heat dissipation 2. DRAIN 3. SOURCE APPLICATION z Power switching application z Hard switching and high frequency circuits z Uninterruptible power supply Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 71 V Gate-Source Voltage VGS ±20 V ID 90 A Continuous Drain Current Pulsed Drain Current (note 1) IDM 320 A Single Pulsed Avalanche Energy (note5) EAS 580 mJ Thermal Resistance from Junction to Ambient (note 2) RθJA 62.5 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ [email protected] www.zpsemi.com 1 of 2 CJP71N90 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =71V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS(on) VGS =10V, ID =40A Forward transconductance (note 3) gFS VDS =5V, ID =40A Diode forward voltage (note 3) VSD IS=20A, VGS = 0V 71 V 2 1 µA ±100 nA 4 V 7.5 mΩ 60 S 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =15V,VGS =0V,f =1MHz VDS =0V,VGS =0V,f =1MHz 4871 pF 630.6 pF 410.3 pF 0.63 Ω 36.1 ns SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time td(on) tr VGS=10V,VDS=30V, 54.3 ns td(off) RGEN=10Ω, ID =42A 85.2 ns Turn-off fall time tf 37.3 ns Total gate charge Qg 85.7 nC Gate-source Charge Qgs 23.2 nC Gate-drain Charge Qgd 31.2 nC trr 88.3 Body diode reverse recovery time (note 3) Body diode reverse recovery charge (note 3) VDS =48V,VGS =10V,ID =84A IF=84A,dI/dt=100A/µs 65.9 Qrr ns nC Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%. 4. Guaranteed by design, not subject to producting. .5 L=0.5mH, VDD=37.5V, VGS=10V,RG=25Ω,Starting TJ=25℃ . [email protected] www.zpsemi.com 2 of 2