ETC2 NPTB00025 Thermally enhanced industry standard package Datasheet

NPTB00025
Gallium Nitride 28V, 25W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for broadband operation from
DC - 4000MHz
• 25W P3dB CW narrowband power
• 10W P3dB CW broadband power from 500-1000MHz
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 export control
Broadband
25 Watt, 28 Volt
GaN HEMT
RF Specifications (CW): VDS = 28V, IDQ = 225mA, Frequency = 3000MHz, TC = 25°C, Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB
Average Output Power at 3dB Gain Compression
22
25
-
W
P1dB
Average Output Power at 1dB Gain Compression
18
21
-
W
GSS
Small Signal Gain
12.5
13.5
-
dB
60
65
-
%
h
Drain Efficiency at 3dB Gain Compression
y
Output mismatch stress, VSWR = 10:1, all phase
angles, POUT = PSAT
No Performance Degradation After Test
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
-10 to 3
V
IG
Gate Current
40
mA
PT
Total Device Power Dissipation (Derated above 25°C)
33
W
qJC
Thermal Resistance (Junction-to-Case)
5.25
°C/W
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
-65 to 150
°C
200
°C
HBM
Human Body Model ESD Rating (per JESD22-A114)
1A (>250V)
MM
Machine Model ESD Rating (per JESD22-A115)
M1 (>50V)
NPTB00025
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NDS-006 Rev. 4, April 2013
NPTB00025
DC Specifications: TC = 25°C
Symbol
Parameter
Min
Typ
Max
Units
100
-
-
V
-
1
5
mA
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 8mA)
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 8mA)
-2.3
-1.8
-1.3
V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 225mA)
-2.0
-1.5
-1.0
V
RON
On Resistance
(VGS = 2.0V, ID = 60mA)
-
0.44
0.55
W
4.9
5.4
-
A
ID
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2.0V)
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ =225mA, TA=25°C unless otherwise noted
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency (MHz)
ZS (W)
ZL (W)
800
3.9 + j5.9
12.2 + j6.1
2000
3.7 - j5.1
7.7 - j1.1
3000
4.7 - j15.3
7.4 - j5.8
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 225mA
NPTB00025
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NDS-006 Rev. 4, April 2013
NPTB00025
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ =225mA, TA=25°C unless otherwise noted.
Figure 2 - Typical CW Performance,
Over Current, Frequency = 3000MHz
Figure 3 - Typical CW Performance
Over Frequency
Figure 4 - Typical CW Performance Over Voltage,
Impedances Held Constant, Frequency = 1800MHz
Typical Device Characteristics
VDS=28V, IDQ =225mA, TA=25°C unless otherwise noted.
Figure 5 - MTTF of NRF1 Devices as a
Function of Junction Temperature
NPTB00025
Figure 6 - Typical CW Performance
in Nitronex Test Fixture, Frequency = 3000MHz
Page 3
NDS-006 Rev. 4, April 2013
NPTB00025
NPTB00025, 3000MHz CW Production Test Fixture
VDS=28V, IDQ =225mA, TA=25°C unless otherwise noted. Additional design information and data available at www.nitronex.com.
VGS
V GATE
V
VDS
GS
C1
+
V DRAIN
C2
VDS
C4
C3
C6
R3
+
C10
R2
C7
C5
NPTB00025
032574R
G041200000
RFRFOUT
OUT
NPT B0 0 0 2 0 A
035274R
G0 4 1 2 0 0 0 0 0
RF IN
RFIN
Nitronex
NPTB00020
TL1
65mils
345mils
C13
8/01/2006
TL2
65mils
397mils
C9
RFOUT
NPTB00025
C12
RFIN
C8
TL7
65mils
600mils
TL6
65mils
600mils
TL4
265mils
441mils
TL3
281mils
424mils
C11
TL5
65mils
930mils
Figure 7 - NPTB00025 3000MHz Test Fixture
Table 2: NPTB00025 3000MHz Test Fixture Bill of Materials
Name
Value
Vendor
Part Number
C1
150uF
Nichicon
UPW1C151MED
C10
270uF
United Chmi-Con
ELXY630ELL271MK25S
C2, C8
0.1uF
Kemet
C1206C104K1RACTU
C3, C7
0.01uF
AVX
12061C103KAT2A
C4, C9
1.0 uF
Panasonic
ECJ-5YB2A105M
C5, C6, C11, C12
5.6pF
ATC
ATC600F5R6CT
C13
1.2pF
ATC
ATC600F1R2AT
R2
49.9 ohm
Panasonic
ERJ-6ENF49R9V
R3
0.33 ohm
Panasonic
ERJ-6RQFR33V
Substrate
-
Taconic
RF35, t=30mil, er =3.5
NPTB00025
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NDS-006 Rev. 4, April 2013
NPTB00025
Ordering Information1
Part Number
NPTB00025B
Description
NPTB00025 in AC200B-2 Metal-Ceramic Bolt-Down Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 8 - AC200B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
NPTB00025
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NDS-006 Rev. 4, April 2013
NPTB00025
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
[email protected]
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to
its products and services at any time and to discontinue any product or service without notice. Customers should obtain
the latest relevant information before placing orders and should verify that such information is current and complete. All
products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest
information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in
accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters
of each product is not necessarily performed.
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All other product or service names are the property of their respective owners.
© Nitronex, LLC 2012. All rights reserved.
NPTB00025
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NDS-006 Rev. 4, April 2013
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