BC856ASQ 65V DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BVCEO > -65V IC = -100mA High Collector Current Complementary NPN Types Available (BC846AS) Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Finish. Solderable per MIL-STD202, Method 208 Weight: 0.006 grams (Approximate) SOT363 C1 B2 B1 SOT363 C2 E1 Top View E2 Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Product BC856ASQ-7-F Notes: Compliance AEC-Q101 Marking KPS Reel Size (inches) 7 Tape Width (mm) 8 Quantity per Reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT363 KPS = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) KPS YM KPS YM Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 BC856ASQ Document number: DS38957 Rev. 1 - 2 Mar 3 2017 E Apr 4 2018 F May 5 Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D June 2016 © Diodes Incorporated BC856ASQ Absolute Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol VCBO VCEO VEBO IC ICM IEM Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Peak Collector Current Peak Emitter Current Value -80 -65 -5.0 -100 -200 -200 Unit V V V mA mA mA Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Air (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Unit mW °C/W °C (Note 7) (@TA = +25°C unless otherwise specified.) Characteristic Collector – Base Breakdown Voltage Collector – Emitter Breakdown Voltage Emitter – Base Breakdown Voltage DC Current Gain Symbol BVCBO BVCEO BVEBO hFE Min -80 -65 -5 125 Max — — — 250 -300 -650 Unit V V V — — mV VBE(ON) — — -600 — Typ — — — 180 -75 -250 -700 -850 -650 — Collector – Emitter Saturation Voltage VCE(SAT) — Base – Emitter Saturation Voltage VBE(SAT) Base – Emitter Voltage -750 -820 mV Collector – Cutoff Current ICES ICBO ICBO — — — — — — -15 -15 -4.0 nA nA µA Gain Bandwidth Product fT 100 — — MHz CCB — 3 — pF Collector – Base Capacitance Notes: mV Test Condition IC = 10µA IC = 10mA IE = 1µA VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCE = -80V VCB = -30V VCB = -30V, TA = +150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Short duration pulse test used to minimize self-heating effect. . BC856ASQ Document number: DS38957 Rev. 1 - 2 2 of 6 www.diodes.com June 2016 © Diodes Incorporated BC856ASQ Typical Electrical Characteristics (@TA = +25°C unless otherwise specified.) P D, POWER DISSIPATION (mW) 250 200 150 100 50 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) 150 Fig. 1 Power Derating Curve (Note 2) BC856ASQ Document number: DS38957 Rev. 1 - 2 3 of 6 www.diodes.com June 2016 © Diodes Incorporated BC856ASQ Typical Electrical Characteristics BC856ASQ Document number: DS38957 Rev. 1 - 2 (Continued) (@TA = +25°C unless otherwise specified.) 4 of 6 www.diodes.com June 2016 © Diodes Incorporated BC856ASQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 E E1 F SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -All Dimensions in mm b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions G Y1 Y C G X Y Y1 Value (in mm) 0.650 1.300 0.420 0.600 2.500 X BC856ASQ Document number: DS38957 Rev. 1 - 2 5 of 6 www.diodes.com June 2016 © Diodes Incorporated BC856ASQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com BC856ASQ Document number: DS38957 Rev. 1 - 2 6 of 6 www.diodes.com June 2016 © Diodes Incorporated