PROCESS CP371 N-Channel MOSFET Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 55 x 32 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 7.3 x 7.3 MILS Source Bonding Pad Area 50 x 25 MILS Top Side Metalization Al - 40,000Å Back Side Metalization Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å GEOMETRY GROSS DIE PER 8 INCH WAFER 25,200 PRINCIPAL DEVICE TYPE CXDM4060N R0 (10-December 2012) w w w. c e n t r a l s e m i . c o m PROCESS CP371 Typical Electrical Characteristics R0 (10-December 2012) w w w. c e n t r a l s e m i . c o m