IPN70R2K0P7S MOSFET 700VCoolMOSªP7PowerTransistor PG-SOT223 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. Drain Pin 2, Tab Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Gate Pin 1 Source Pin 3 Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsathigherswitchingfrequencies •Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 700 V RDS(on),max 2.0 Ω Qg,typ 3.8 nC ID,pulse 5.7 A Eoss @ 400V 0.4 µJ V(GS)th,typ 3 V ESD class (HBM) 1C Type/OrderingCode Package Marking IPN70R2K0P7S PG-SOT223 70S2K0 Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 3.0 2.0 A TC = 20°C TC = 100°C - 5.7 A TC=25°C - - 1.3 A measured with standard leakage inductance of transformer of 5µH dv/dt - - 100 V/ns VDS=0...400V Gate source voltage VGS -16 -30 - 16 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 6.0 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 1.1 A TC=25°C IS,pulse - - 5.7 A TC = 25°C dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C Maximum diode commutation speed dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Insulation withstand voltage VISO - - n.a. V Vrms, TC=25°C, t=1min Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Application (Flyback) relevant avalanche current, single pulse3) IAS MOSFET dv/dt ruggedness 2) Diode pulse current 4) Reverse diode dv/dt 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - solder point Values Min. Typ. Max. RthJS - - 20.9 °C/W - Thermal resistance, junction - ambient RthJA for minimal footprint - - 160 °C/W minimal footprint Thermal resistance, junction - ambient RthJA soldered on copper area - - 75 Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer 70µm °C/W thick) copper area for drain connection and cooling. PCB is vertical without blown air. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold reflow MSL1 1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7. 4) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.50 V VDS=VGS,ID=0.03mA - 10 1 - µA VDS=700V,VGS=0V,Tj=25°C VDS=700V,VGS=0V,Tj=150°C - - 1 µA VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 700 - Gate threshold voltage V(GS)th 2.50 Zero gate voltage drain current IDSS Gate-source leakage current incl. Zener IGSS diode Drain-source on-state resistance RDS(on) - 1.64 3.74 2.00 - Ω VGS=10V,ID=0.5A,Tj=25°C VGS=10V,ID=0.5A,Tj=150°C Gate resistance RG - 1.6 - Ω f=1MHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 130 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 2 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 6 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 79 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=0.4A, RG=12.8Ω Rise time tr - 5.5 - ns VDD=400V,VGS=13V,ID=0.4A, RG=12.8Ω Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=13V,ID=0.4A, RG=12.8Ω Fall time tf - 70 - ns VDD=400V,VGS=13V,ID=0.4A, RG=12.8Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.6 - nC VDD=400V,ID=0.4A,VGS=0to10V Gate to drain charge Qgd - 1.5 - nC VDD=400V,ID=0.4A,VGS=0to10V Gate charge total Qg - 3.8 - nC VDD=400V,ID=0.4A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=0.4A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 4 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=0.4A,Tj=25°C 180 - ns VR=400V,IF=0.4A,diF/dt=50A/µs - 0.4 - µC VR=400V,IF=0.4A,diF/dt=50A/µs - 5 - A VR=400V,IF=0.4A,diF/dt=50A/µs Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 10 9 101 8 100 µs 100 ID[A] 6 Ptot[W] 1 µs 10 µs 7 5 1 ms 10-1 4 10 ms 3 DC 10-2 2 1 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 102 10 101 1 µs 0.5 101 10 µs ID[A] 100 µs 1 ms 10-1 10 ms 0.1 0.05 0.02 100 0.01 single pulse DC 10-2 10-3 0.2 ZthJC[K/W] 100 100 101 102 103 10-1 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 7 5.0 20 V 10 V 20 V 10 V 8V 6 4.5 8V 7V 4.0 5 3.5 7V 6V 3.0 4 ID[A] ID[A] 6V 3 2.5 5.5 V 2.0 5.5 V 5V 1.5 2 5V 4.5 V 1.0 1 4.5 V 0 0 5 10 15 0.5 0.0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 6.0 5V 5.5 V 20 VDS[V] 5.0 6V 4.5 5.5 4.0 6.5 V 7V 5.0 3.5 10 V 3.0 RDS(on)[Ω] RDS(on)[Ω] 4.5 4.0 3.5 98% 2.5 2.0 typ 1.5 3.0 1.0 2.5 2.0 0.5 0 5 10 0.0 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=0.5A;VGS=10V 7 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 7 10 9 6 8 25 °C 5 7 6 VGS[V] ID[A] 4 150 °C 3 120 V 400 V 5 4 3 2 2 1 1 0 0 2 4 6 8 10 0 12 0 1 2 VGS[V] 3 4 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram13:Drain-sourcebreakdownvoltage 2 10 840 25 °C 125 °C 820 800 780 101 IF[A] VBR(DSS)[V] 760 100 740 720 700 680 660 640 620 10-1 0.0 0.5 1.0 1.5 2.0 600 -75 -50 -25 VSD[V] 25 50 75 100 125 150 175 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 0 VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S Diagram14:Typ.capacitances Diagram15:Typ.Cossstoredenergy 4 10 1.0 0.9 103 0.8 0.7 Ciss 102 C[pF] Eoss[µJ] 0.6 101 0.5 0.4 Coss 0.3 100 0.2 Crss 10-1 0 100 0.1 200 300 400 500 0.0 0 VDS[V] 200 300 400 500 600 700 VDS[V] C=f(VDS);VGS=0V;f=250kHz Final Data Sheet 100 Eoss=f(VDS) 9 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S 6PackageOutlines DOCUMENT NO. Z8B00180553 SCALE DIM A A1 A2 b b2 c D E E1 e e1 L N O MILLIMETERS MIN MAX 1.52 1.80 0.10 1,50 1.70 0.60 0.80 2.95 3.10 0.24 0.32 6.30 6.70 6.70 7.30 3.30 3.70 2.3 BASIC 4.6 BASIC 0.75 1.10 3 0 INCHES MIN 0.060 0.059 0.024 0.116 0.009 0.248 0.264 0.130 MAX 0.071 0.004 0.067 0.031 0.122 0.013 0.264 0.287 0.146 0.091 BASIC 0.181 BASIC 0.030 0.043 3 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 24-02-2016 REVISION 01 Figure1OutlinePG-SOT223,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S 7AppendixA Table11RelatedLinks • IFXCoolMOSªP7Webpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPN70R2K0P7S RevisionHistory IPN70R2K0P7S Revision:2018-02-12,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-09-15 Release of final version 2.1 2018-02-12 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2018-02-12