MSRT20060(A)D thru MSRT200100(A)D Silicon Standard Recovery Diode VRRM = 600 V - 1000 V IF(AV) = 200 A Features • High Surge Capability • Types from 600 V to 1000 V VRRM Three Tower Package • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MSRT20060(A)D MSRT20080(A)D MSRT200100(A)D Unit Repetitive peak reverse voltage VRRM 600 800 1000 V RMS reverse voltage VRMS 424 566 707 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 600 -55 to 150 -55 to 150 800 -55 to 150 -55 to 150 1000 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MSRT20060(A)D MSRT20080(A)D MSRT200100(A)D Unit Average forward current (per leg) IF(AV) TC = 140 °C 200 200 200 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 3000 3000 3000 A Maximum instantaneous forward voltage (per leg) VF IFM = 200 A, Tj = 25 °C 1.1 1.1 1.1 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 10 10 10 μA Tj = 150 °C 5 5 5 mA 0.35 0.35 0.35 °C/W Parameter Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘjc www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 MSRT20060(A)D thru MSRT200100(A)D www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 MSRT20060(A)D thru MSRT200100(A)D Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3