Preliminary Technical Information IXYN100N120C3 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE(sat) tfi(typ) = = ≤ = 1200V 86A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM SOT-227B, miniBLOC E153432 Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 152 86 490 A A A IA EAS TC = 25°C TC = 25°C 50 1.2 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 200 @VCE ≤ VCES A PC TC = 25°C 830 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60Hz IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1min t = 1s Weight Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z z z z z z z Optimized for Low Switching Losses Square RBSOA Isolation Voltage 2500V~ Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability International Standard Package Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC Characteristic Values Min. Typ. Max. = 250μA, VGE = 0V VGE(th) IC ICES VCE = VCES, VGE = 0V 1200 = 250μA, VCE = VGE 5.0 VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved V 25 μA 1.25 mA TJ = 150°C IGES Applications V 3.0 2.9 4.1 High Power Density Low Gate Drive Requirement ±100 nA 3.5 V V z z z z z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100405A(03/13) IXYN100N120C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 100A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Note 2 Inductive load, TJ = 125°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Note 2 RthJC RthCS Notes: SOT-227B miniBLOC (IXYN) 52 S 6000 353 130 pF pF pF 270 50 93 nC nC nC 32 90 6.50 123 110 2.90 ns ns mJ ns ns mJ 5.00 32 90 10.10 140 125 3.55 ns ns mJ ns ns mJ 0.05 0.18 °C/W °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN100N120C3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 200 VGE = 15V 13V 12V 11V 10V 180 160 250 9V 120 100 8V 80 60 8V 7V 50 20 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 5 10 15 20 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 25 2.2 200 VGE = 15V 13V 12V 11V 10V 160 140 VGE = 15V 2.0 I 1.8 9V VCE(sat) - Normalized 180 IC - Amperes 9V 150 100 7V 40 120 100 8V 80 7V 60 C = 200A 1.6 1.4 I 1.2 C = 100A 1.0 0.8 40 I 6V 20 C = 50A 0.6 5V 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 8.5 TJ = 25ºC TJ = - 40ºC 25ºC 125ºC 180 7.5 160 6.5 140 I 5.5 C IC - Amperes VCE - Volts 10V 200 IC - Amperes IC - Amperes 140 11V VGE = 15V 13V 12V = 200A 4.5 3.5 120 100 80 60 100A 40 2.5 20 50A 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 3.5 4.5 5.5 6.5 VGE - Volts 7.5 8.5 9.5 IXYN100N120C3 Fig. 7. Transconductance Fig. 8. Gate Charge 90 16 TJ = - 40ºC 80 VCE = 600V 14 I C = 100A 125ºC 50 I G = 10mA 12 25ºC 60 VGE - Volts g f s - Siemens 70 40 30 10 8 6 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 200 40 80 IC - Amperes 120 160 200 240 280 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 220 100,000 200 f = 1 MHz 160 IC - Amperes Capacitance - PicoFarads 180 Cies 10,000 1,000 Coes 140 120 100 80 60 100 Cres 40 20 0 200 10 0 5 10 15 20 25 30 35 40 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns 300 400 500 600 700 800 900 1000 1100 1200 1300 VCE - Volts VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aaaaaa 0.3 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYN100N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 Eoff Eon - --- 14 TJ = 125ºC , VGE = 15V VCE = 600V 6 12 4 8 3 6 2 I C 1 2 3 4 5 6 7 8 9 10 TJ = 125ºC 3.0 8 2.5 6 TJ = 25ºC 2 50 10 55 60 65 RG - Ohms 4.5 ---- 90 95 0 100 tfi 6 4 t f i - Nanoseconds 2.5 Eon - MilliJoules 8 I C = 50A 400 VCE = 600V 10 3.0 td(off) - - - - TJ = 125ºC, VGE = 15V 120 300 I C = 100A I 100 C = 50A 200 80 1.5 t d(off) - Nanoseconds I C = 100A 2.0 100 2 1.0 25 50 75 0 125 100 60 0 1 2 3 4 170 220 170 200 150 RG = 1Ω , VGE = 15V TJ = 125ºC 110 160 90 70 50 65 10 td(off) - - - - RG = 1Ω , VGE = 15V 200 70 75 80 85 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 95 130 180 110 160 I C = 50A, 100A 90 140 120 70 120 100 100 50 140 TJ = 25ºC 60 9 25 50 75 TJ - Degrees Centigrade 100 100 125 t d(off) - Nanoseconds 180 t d(off) - Nanoseconds 130 55 8 VCE = 600V VCE = 600V 50 7 220 tfi td(off) - - - - t f i - Nanoseconds tfi 6 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 150 5 RG - Ohms TJ - Degrees Centigrade t f i - Nanoseconds 85 500 140 VCE = 600V 80 160 12 RG = 1Ω , VGE = 15V 3.5 Eoff - MilliJoules Eon 75 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 14 Eoff 70 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 4.0 4 1.0 0 1 VCE = 600V 1.5 2 0 12 2.0 4 = 50A ---- Eon - MilliJoules 10 Eon RG = 1Ω , VGE = 15V 3.5 Eon - MilliJoules I C = 100A 5 14 Eoff 4.0 Eoff - MilliJoules 7 Eoff - MilliJoules 4.5 16 IXYN100N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 140 70 tri tri td(on) - - - - TJ = 125ºC, VGE = 15V 160 33 120 60 VCE = 600V td(on) - - - - RG = 1Ω , VGE = 15V 32 TJ = 125ºC VCE = 600V I C t r i - Nanoseconds t r i - Nanoseconds 40 40 30 = 50A 0 2 3 4 5 6 7 8 9 80 30 TJ = 25ºC 60 29 40 28 20 20 1 31 50 10 RG - Ohms 55 60 65 70 75 80 85 90 95 - Nanoseconds = 100A 100 d(on) 80 C - Nanoseconds I d(on) 50 t t 120 27 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 35 tri 140 34 RG = 1Ω , VGE = 15V 33 = 100A 32 80 31 60 30 40 - Nanoseconds 100 C d(on) I t VCE = 600V 120 t r i - Nanoseconds td(on) - - - - 29 I C = 50A 20 28 0 25 50 75 100 27 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_100N120C3(9T)10-26-11