Hamamatsu G12180-030A Ingaas pin photodiode Datasheet

InGaAs PIN photodiodes
G12180 series
Photosensitive area from φ0.3 mm to φ5 mm
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of
InGaAs PIN photodiodes with photosensitive area from φ0.3 mm to φ5 mm.
Features
Applications
Low noise, low dark current
Laser monitors
Low terminal capacitance
Optical power meters
Large photosensitive area
Laser diode life test
Various photosensitive area sizes available
NIR (near infrared) photometry
Optical communications
Specifications/Absolute maximum ratings
Type no.
Dimensional
outline/
Window
material*1
Package
Cooling
Photosensitive
area
Reverse
voltage
VR max
(V)
(mm)
G12180-003A
φ0.3
G12180-005A
(1)/K
TO-18
φ0.5
G12180-010A
φ1
Non-cooled
G12180-020A
φ2
(2)/K
TO-5
G12180-030A
φ3
G12180-050A
(3)/K
TO-8
φ5
*1: K: borosilicate glass with anti-reflective coating (optimized for 1.55 μm peak)
Note: Exceeding the absolute maximum ratings even momentarily may cause a
product within the absolute maximum ratings.
Absolute maximum ratings
Operating
Storage
temperature temperature
Topr
Tstg
(°C)
(°C)
Soldering
conditions
20
10
-40 to +100
-55 to +125
5
260 °C
or less,
within 10 s
2
drop in product quality. Always be sure to use the
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no.
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Photosensitivity
S
Dark
current
ID
VR=5 V
1.3 μm
λ=λp
Min. Typ. Min. Typ. Typ. Max.
(μm) (μm) (A/W) (A/W) (A/W) (A/W) (nA) (nA)
0.1 0.5
0.15 0.75
0.8
4
0.9 to 1.7 1.55 0.8 0.9 0.9 1.1
1.5*2 7.5*2
2.5*2 12.5*2
5*2 25*2
G12180-003A
G12180-005A
G12180-010A
G12180-020A
G12180-030A
G12180-050A
*2: VR=1 V
*3: VR=1 V, f=1 MHz
Cutoff
Terminal
Shunt
Temper- frequency
Detectivity
capacitance
resistance
fc
ature
Ct
D*
Rsh
coefficient VR=5 V
VR=5 V
λ=λp
VR=10 mV
of dark RL=50 Ω
f=1 MHz
current
-3 dB
ΔTID
Min. Typ. Typ. Max. Min. Typ. Min.
Typ.
(MHz) (MHz) (pF) (pF) (MΩ) (MΩ) (cm·Hz1/2/W) (cm·Hz1/2/W)
450 600
5
7.5 200 1000
160 200 15
20
80 400
25
60
55 120 25 125
2.4 × 1012 6.3 × 1012
1.09
4*3 13*3 250*3 800*3 6.5 30
2.5*3 7*3 450*3 1500*3 4
20
0.5*3 3*3 1000*3 7000*3 1.3 6.5
www.hamamatsu.com
Noize
equivalent
power
NEP
λ=λp
Typ.
(W/Hz1/2)
4.2 × 10-15
7 × 10-15
1.4 × 10-14
2.8 × 10-14
4.4 × 10-14
7 × 10-14
Max.
(W/Hz1/2)
1.2 × 10-14
1.9 × 10-14
3.8 × 10-14
7.5 × 10-14
1.1 × 10-13
1.9 × 10-13
1
InGaAs PIN photodiodes
G12180 series
Spectral transmittance characteristics of
window material
Spectral response
(Typ. Ta=25 °C)
1.2
(Typ. Ta=25 °C)
100
0.8
Transmittance (%)
Photosensitivity (A/W)
1.0
0.6
0.4
95
90
0.2
0
0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
85
0.9
1.0
1.1
Wavelength (µm)
1.2
1.3
1.4
1.5
1.6
Wavelength (µm)
KIRDB0374EA
KIRDB0545EA
Linearity
(Typ. Ta=25 °C)
(Typ. Ta=25 °C, λ=1.3 μm, RL=2 Ω, VR=0 V)
102
100
Relative sensitivity (%)
Temperature coefficient of sensitivity (%/°C)
Photosensitivity temperature characteristics
2
1.7
1
0
G12180-010A
98
G12180-020A
96
G12180-030A
94
G12180-050A
92
-1
0.8
90
1.0
1.2
1.4
1.6
1.8
0
2
4
6
8
10
12
14
16
Incident light level (mW)
Wavelength (µm)
KIRDB0541EA
KIRDB0042EA
2
InGaAs PIN photodiodes
G12180 series
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
100 nA
(Typ. Ta=25 °C, f=1 MHz)
10 nF
G12180-050A
G12180-030A
G12180-050A
Terminal capacitance
10 nA
Dark current
G12180-020A
1 nA
G12180-005A
G12180-010A
100 pA
G12180-030A
1 nF
G12180-020A
G12180-010A
100 pF
G12180-005A
10 pF
G12180-003A
10 pA
0.01
0.1
1
G12180-003A
10
100
Reverse voltage (V)
1 pF
0.01
0.1
1
10
Reverse voltage (V)
KIRDB0543EA
KIRDB0542EA
Shunt resistance vs. element temperature
Dimensional outlines (unit: mm)
(Typ. VR=10 mV)
100 GΩ
(1) G12180-003A/-005A/-010A
5.4 ± 0.2
G12180-003A
10 GΩ
100
100 MΩ
2.6 ± 0.2
G12180-005A
G12180-010A
10 MΩ
G12180-020A
Photosensitive
surface
1 MΩ
G12180-030A
100 kΩ
10 kΩ
13 min.
Shunt resistance
1 GΩ
3.7 ± 0.2
4.7 ± 0.1
Window
2.2 min.
0.45
Lead
G12180-050A
2.5 ± 0.2
1 kΩ
-40
-20
0
20
40
60
80
100
Element temperature (°C)
KIRDB0544EA
Case
KIRDA0150EC
3
InGaAs PIN photodiodes
12.4 ± 0.1
0.45
Lead
0.5
Photosensitive
surface
2.8 ± 0.2
Window
7.0 min.
18 min.
Photosensitive
surface
0.4 max.
Window
4.5 min.
4.9 ± 0.2
13.8 ± 0.2
8.3 ± 0.1
2.5 ± 0.2
9.2 ± 0.2
0.45
Lead
4.9 ± 0.2
(3) G12180-050A
14 min.
(2) G12180-020A/-030A
G12180 series
7.5 ± 0.2
5.1 ± 0.3
Index mark
1.0
1.5 max.
Case
Case
KIRDA0052EC
KIRDA0155EB
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Metal, ceramic, Plastic products/Precautions
Technical information
∙ infrared detector/technical information
Information described in this material is current as of January, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1121E02 Jan. 2014 DN
4
Similar pages