Vishay BZD27B100P Zener diodes with surge current specification Datasheet

BZD27B Series
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
Available
• Sillicon planar Zener diodes
• Voltage range includes 43 breakdown
voltages from 3.6 V to 200 V with ± 2 %
for BZD27B Series
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• ESD capability according to AEC-Q101:
human body model: > 8 kV
machine model: > 800 V
• Wave and reflow solderable
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, automotive grade
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
17249
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
3.6 to 200
V
Test current IZT
5 to 100
mA
VBR
7.35 to 196
V
VWM
6.2 to 160
V
PPPM
150
W
175
°C
TJ max.
VZ specification
UNIT
Pulse current
Int. construction
Single
Polarity
Uni-directional
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
3000 per 7" reel (8 mm tape)
30 000/box
10 000 per 13" reel (8 mm tape)
50 000/box
BZD27B3V6P-E3-08 to BZD27B200P-E3-08
BZD27B3V6P-HE3-08 to BZD27B200P-HE3-08
BZD27B Series
BZD27B3V6P-E3-18 to BZD27B200P-E3-18
BZD27B3V6P-HE3-18 to BZD27B200P-HE3-18
PACKAGE
PACKAGE NAME
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
DO-219AB (SMF)
15 mg
UL 94 V-0
MOISTURE SENSITIVITY WHISKER TEST
LEVEL
ACC. JESD 201
MSL level 1
(according J-STD-020)
Class 2
SOLDERING CONDITIONS
Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Non repetitive peak surge power dissipation (2)
TEST CONDITION
SYMBOL
VALUE
UNIT
TL = 105 °C
Ptot
2300
mW
TA = 30 °C
(1)
Ptot
800
mW
100 μs square pulse
PZSM
300
W
10/1000 μs waveform
PRSM
150
W
RthJL
30
K/W
RthJA
180
K/W
Junction to lead
Junction to ambient air
Mounted on epoxy-glass PCB with
3 mm x 3 mm Cu pads
( 40 μm thick)
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
-65 to +175
°C
Operating temperature range
Top
-65 to +175
°C
Notes
(1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2) T = 25 °C prior to surge
J
Rev. 1.0., 29-Oct-15
Document Number: 85921
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
VZ at IZT1
IZT1
V
mA
MARKING
CODE
MIN.
NOM.
MAX.
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
IR at VR
ZZ at IZT1
VZ at IZT1
μA

V
MAX.
%/°C
TYP.
MAX.
MIN.
MAX.
BZD27B3V6P
0D
3.53
3.6
3.67
100
100
1
4
8
-0.14
-0.04
BZD27B3V9P
1D
3.82
3.9
3.98
100
50
1
4
8
-0.14
-0.04
BZD27B4V3P
2D
4.21
4.3
4.39
100
25
1
4
7
-0.12
-0.02
BZD27B4V7P
3D
4.61
4.7
4.79
100
10
1
3
7
-0.1
0
BZD27B5V1P
4D
5.00
5.1
5.20
100
5
1
3
6
-0.08
0.02
BZD27B5V6P
5D
5.49
5.6
5.71
100
10
2
2
4
-0.04
0.04
BZD27B6V2P
6D
6.08
6.2
6.32
100
5
2
2
3
-0.01
0.06
BZD27B6V8P
7D
6.66
6.8
6.94
100
10
3
1
3
0
0.07
BZD27B7V5P
8D
7.35
7.5
7.65
100
50
3
1
2
0
0.07
BZD27B8V2P
9D
8.04
8.2
8.36
100
10
3
1
2
0.03
0.08
BZD27B9V1P
0E
8.92
9.1
9.28
50
10
5
2
4
0.03
0.08
BZD27B10P
1E
9.80
10
10.20
50
7
7.5
2
4
0.05
0.09
BZD27B11P
2E
10.78
11
11.22
50
4
8.2
4
7
0.05
0.1
BZD27B12P
3E
11.76
12
12.24
50
3
9.1
4
7
0.05
0.1
BZD27B13P
4E
12.74
13
13.26
50
2
10
5
10
0.05
0.1
BZD27B15P
5E
14.70
15
15.30
50
1
11
5
10
0.05
0.1
BZD27B16P
6E
15.68
16
16.32
25
1
12
6
15
0.06
0.11
BZD27B18P
7E
17.64
18
18.36
25
1
13
6
15
0.06
0.11
BZD27B20P
8E
19.60
20
20.40
25
1
15
6
15
0.06
0.11
BZD27B22P
9E
21.56
22
22.44
25
1
16
6
15
0.06
0.11
BZD27B24P
0F
23.52
24
24.48
25
1
18
7
15
0.06
0.11
BZD27B27P
1F
26.46
27
27.54
25
1
20
7
15
0.06
0.11
BZD27B30P
2F
29.40
30
30.60
25
1
22
8
15
0.06
0.11
BZD27B33P
3F
32.34
33
33.66
25
1
24
8
15
0.06
0.11
BZD27B36P
4F
35.28
36
36.72
10
1
27
21
40
0.06
0.11
BZD27B39P
5F
38.22
39
39.78
10
1
30
21
40
0.06
0.11
BZD27B43P
6F
42.14
43
43.86
10
1
33
24
45
0.07
0.12
BZD27B47P
7F
46.06
47
47.94
10
1
36
24
45
0.07
0.12
BZD27B51P
8F
49.98
51
52.02
10
1
39
25
60
0.07
0.12
BZD27B56P
9F
54.88
56
57.12
10
1
43
25
60
0.07
0.12
BZD27B62P
0G
60.76
62
63.24
10
1
47
25
80
0.08
0.13
BZD27B68P
1G
66.64
68
69.36
10
1
51
25
80
0.08
0.13
BZD27B75P
2G
73.50
75
76.50
10
1
56
30
100
0.08
0.13
BZD27B82P
3G
80.36
82
83.64
10
1
62
30
100
0.08
0.13
BZD27B91P
4G
89.18
91
92.82
5
1
68
60
200
0.08
0.13
BZD27B100P
5G
98.00
100
102.00
5
1
75
60
200
0.09
0.13
BZD27B110P
6G
107.80
110
112.20
5
1
82
80
250
0.09
0.13
BZD27B120P
7G
117.60
120
122.40
5
1
91
80
250
0.09
0.13
BZD27B130P
8G
127.40
130
132.60
5
1
100
110
300
0.09
0.13
BZD27B150P
9G
147.00
150
153.00
5
1
110
130
300
0.09
0.13
BZD27B160P
0H
156.80
160
163.20
5
1
120
150
350
0.09
0.13
BZD27B180P
1H
176.40
180
183.60
5
1
130
180
400
0.09
0.13
BZD27B200P
2H
196.00
200
204.00
5
1
150
200
500
0.09
0.13
Notes
• Maximum VF = 1.2 V, at IF = 0.2 A
• Electrical characteristics when used as voltage regulator diodes
(1) Pulse test: t  5 ms
p
Rev. 1.0., 29-Oct-15
Document Number: 85921
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
VZ at IZT1
IZT1
IR at VR
VC at IRSM (1)
VZ at IZT1
V
mA
MARKING
CODE
MIN.
NOM.
MAX.
μA
V
MAX.
V
A
MAX.
%/C
MIN.
MAX.
BZD27B7V5P
8D
7.35
7.5
7.65
100
1500
6.2
10.9
13.3
0
0.07
BZD27B8V2P
9D
8.04
8.2
8.36
100
1200
6.8
11.8
12.2
0.03
0.08
BZD27B9V1P
0E
8.92
9.1
9.28
50
100
7.5
12.9
11.3
0.03
0.08
BZD27B10P
1E
9.80
10
10.20
50
20
8.2
14.2
10.1
0.05
0.09
BZD27B11P
2E
10.78
11
11.22
50
5
9.1
15.2
9.6
0.05
0.1
BZD27B12P
3E
11.76
12
12.24
50
5
10
16
8.8
0.05
0.1
BZD27B13P
4E
12.74
13
13.26
50
5
11
17.8
7.9
0.05
0.1
BZD27B15P
5E
14.70
15
15.30
50
5
12
20.5
7.2
0.05
0.1
BZD27B16P
6E
15.68
16
16.32
25
5
13
21.9
6.6
0.06
0.11
BZD27B18P
7E
17.64
18
18.36
25
5
15
24.6
5.9
0.06
0.11
BZD27B20P
8E
19.60
20
20.40
25
5
16
27.3
5.3
0.06
0.11
BZD27B22P
9E
21.56
22
22.44
25
5
18
30
4.8
0.06
0.11
BZD27B24P
0F
23.52
24
24.48
25
5
20
32.3
4.4
0.06
0.11
BZD27B27P
1F
26.46
27
27.54
25
5
22
36.3
3.9
0.06
0.11
BZD27B30P
2F
29.40
30
30.60
25
5
24
40.4
3.6
0.06
0.11
BZD27B33P
3F
32.34
33
33.66
25
5
27
44.4
3.2
0.06
0.11
BZD27B36P
4F
35.28
36
36.72
10
5
30
48.4
3
0.06
0.11
BZD27B39P
5F
38.22
39
39.78
10
5
33
52.5
2.8
0.06
0.11
BZD27B43P
6F
42.14
43
43.86
10
5
36
57.9
2.5
0.07
0.12
BZD27B47P
7F
46.06
47
47.94
10
5
39
62.8
2.3
0.07
0.12
BZD27B51P
8F
49.98
51
52.02
10
5
43
68.2
2.1
0.07
0.12
BZD27B56P
9F
54.88
56
57.12
10
5
47
74.8
1.9
0.07
0.12
BZD27B62P
0G
60.76
62
63.24
10
5
51
82.9
1.7
0.08
0.13
BZD27B68P
1G
66.64
68
69.36
10
5
56
90.9
1.6
0.08
0.13
BZD27B75P
2G
73.50
75
76.50
10
5
62
100.2
1.5
0.08
0.13
BZD27B82P
3G
80.36
82
83.64
10
5
68
110
1.3
0.08
0.13
BZD27B91P
4G
89.18
91
92.82
5
5
75
122
1.2
0.09
0.13
BZD27B100P
5G
98.00
100
102.00
5
5
82
134
1.1
0.09
0.13
BZD27B110P
6G
107.80
110
112.20
5
5
91
145
1
0.09
0.13
BZD27B120P
7G
117.60
120
122.40
5
5
100
161
0.9
0.09
0.13
BZD27B130P
8G
127.40
130
132.60
5
5
110
174
0.81
0.09
0.13
BZD27B150P
9G
147.00
150
153.00
5
5
120
201
0.73
0.09
0.13
BZD27B160P
0H
156.80
160
163.20
5
5
130
214
0.67
0.09
0.13
BZD27B180P
1H
176.40
180
183.60
5
5
150
242
0.6
0.09
0.13
BZD27B200P
2H
196.00
200
204.00
5
5
160
268
0.54
0.09
0.13
Notes
• Maximum VF = 1.2 V, at IF = 0.2 A
• Electrical characteristics when used as protection diodes
(1) Non-repetitive peak reverse current in accordance with “IEC 60-1, section 8” (10/1000 μs pulse); see fig. 4
Rev. 1.0., 29-Oct-15
Document Number: 85921
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B Series
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
IF - Forward Current (A)
IRSM
(%)
Max. VF
t1 = 10 µs
t2 = 1000 µs
100
Typ. VF
90
1
50
10
0.1
0.6
0.8
17411
1.0
1.2
1.4
17415
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
t
t1
1.6
t2
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition
CD - Typ. Junction Capacitance (pF)
10 000
B5V1P
B6V8P
B18P
B12P
1000
100
B27P
B51P
B200P
10
0
0.5
1.0
1.5
2.0
2.5
3.0
VR - Reverse Voltage (V)
22806
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
Ptot - Total Power Dissipation (W)
3.0
RthJL = 30K/W
2.5
2.0
1.5
RthJA = 180K/W
1.0
0.5
0
22774
0
25
50
75
100 125 150 175
Tamb - Ambient Temperature (°C)
Fig. 3 - Power Dissipation vs. Ambient Temperature
Rev. 1.0., 29-Oct-15
Document Number: 85921
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B Series
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): DO-219AB (SMF)
0.85 (0.033)
0 (0.000)
0.1 (0.004)
5
5
0.1(0.003)
1.7 (0.067)
Detail Z
enlarged
1.2 (0.047)
0.8 (0.031)
0.25 (0.010)
1.9 (0.075)
0.35 (0.014)
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051)
1.4 (0.055)
1.3 (0.051)
2.9 (0.114)
17247
Rev. 1.0., 29-Oct-15
Document Number: 85921
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B Series
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Vishay Semiconductors
BLISTERTAPE DIMENSIONS FOR SMF in millimeters
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Rev. 1.0., 29-Oct-15
Document Number: 85921
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B Series
www.vishay.com
Vishay Semiconductors
ORIENTATION IN CARRIER TAPE - SMF
Unreeling direction
SMF
cathode
Top view
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010
22670
Rev. 1.0., 29-Oct-15
Document Number: 85921
7
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16
1
Document Number: 91000
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