Renesas H5N2901FL-M0 290v - 18a - mos fet high speed power switching Datasheet

Preliminary Datasheet
H5N2901FL-M0
290V - 18A - MOS FET
High Speed Power Switching
R07DS0996EJ0100
Rev.1.00
Jan 08, 2013
Features
 Low on-resistance
RDS(on) = 0.07  typ. (at ID = 9 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
 Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
1. Gate
2. Drain
3. Source
G
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote2
EARNote2
Note3
Pch
ch-c
Tch
Tstg
Ratings
290
±30
18
72
18
72
6
2.1
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. STch = 25C, Tch  150C
3. Value at Tc = 25C
R07DS0996EJ0100 Rev.1.00
Jan 08, 2013
Page 1 of 6
H5N2901FL-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
RDS(on)
Min
290
—
—
3.0
10
—
Typ
—
—
—
—
18
0.070
Max
—
1
±0.1
4.0
—
0.091
Unit
V
A
A
V
S

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
2200
300
38
35
60
110
45
56
13
26
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
Body-Drain diode reverse recovery
charge
Qrr
—
—
—
0.9
190
1.3
1.5
—
—
V
ns
C
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
Test conditions
ID = 10 mA, VGS = 0
VDS = 290 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 9 A, VDS = 10 V Note4
ID = 9 A, VGS = 10 VNote4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 9 A
VGS = 10 V
RL = 16.1 
Rg = 10 
VDD = 230 V
VGS = 10 V
ID = 18 A
IF = 18 A, VGS = 0 Note4
IF = 18 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
R07DS0996EJ0100 Rev.1.00
Jan 08, 2013
Page 2 of 6
H5N2901FL-M0
Preliminary
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
100
10
100
PW
10
=
10
0
1
Drain Current ID (A)
Drain Current ID (A)
1000
μs
μs
Operation in this
area is limited by
RDS(on)
0.1
Ta = 25°C
Pulse Test
10 V
80
7V
60
6V
40
20
VGS = 5 V
Tc = 25°C
1 shot
0.01
0.1
1
10
0
4
8
12
16
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
VDS = 10 V
Pulse Test
80
Tc = −25°C
25°C
60
75°C
40
20
0
2
4
6
8
10
1
VGS = 10 V
Ta = 25°C
Pulse Test
0.1
0.01
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
0.30
0.25
20
Drain to Source Voltage VDS (V)
VGS = 10 V
Pulse Test
0.20
ID = 30 A
0.15
9A
0.10
15 A
0.05
0
−25
Reverse Recovery Time trr (ns)
Drain Current ID (A)
0
1000
100
100
Static Drain to Source on State Resistance
RDS(on) (Ω)
8V
100
1000
100
di/dt = 100 A/μs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
R07DS0996EJ0100 Rev.1.00
Jan 08, 2013
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 6
H5N2901FL-M0
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
100
Crss
10
0
VGS = 0
f = 1 MHz
40
60
80
Reverse Drain Current IDR (A)
VGS
300
VDD = 230 V
100 V
50 V
200
100
20
0
40
60
80
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
40
20
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0996EJ0100 Rev.1.00
Jan 08, 2013
8
4
VDD = 230 V
100 V
50 V
Drain to Source Voltage VDS (V)
60
16
12
VDS
100
VGS = 0
Ta = 25°C
Pulse Test
0
ID = 30 A
Ta = 25 °C
0
20
100
80
400
Gate to Source Voltage VGS (V)
Ciss
Drain to Source Voltage VDS (V)
Ta = 25°C
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
10000
Dynamic Input Characteristics (Typical)
0
100
5
4
ID = 10 mA
3
1 mA
0.1 mA
2
1
VDS = 10 V
0
−25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
H5N2901FL-M0
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17°C/W, Tc = 25°C
0.1
0.1
0.05
0.02
PDM
1
0.0
lse
u
tp
0.01
100 μ
PW
T
PW
T
ho
1s
D=
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
Vout
10%
10%
10%
VDD
= 145 V
90%
td(on)
R07DS0996EJ0100 Rev.1.00
Jan 08, 2013
tr
90%
td(off)
tf
Page 5 of 6
H5N2901FL-M0
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Ordering Information
Orderable Part Number
H5N2901FL-M0-E#T2
R07DS0996EJ0100 Rev.1.00
Jan 08, 2013
Quantity
50 pcs
Shipping Container
Tube
Page 6 of 6
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