Renesas NE3515S02-T1C X to ku-band super low noise amplifier n-channel hj-fet Datasheet

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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3515S02
X to Ku-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure, high associated gain and middle output power
NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF)
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer
• DBS LNB, VSAT
• Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
NE3515S02-T1C
NE3515S02-T1C-A
S02 (Pb-Free)
NE3515S02-T1D
NE3515S02-T1D-A
Quantity
2 kpcs/reel
Marking
G
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3515S02
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4
V
Gate to Source Voltage
VGS
−3
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
μA
165
mW
Total Power Dissipation
Ptot
Note
Channel Temperature
Tch
+125
°C
Storage Temperature
Tstg
−65 to +125
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PG10708EJ01V0DS (1st edition)
Date Published February 2008 NS
Printed in Japan
2007, 2008
NE3515S02
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDS
1
2
3
V
Drain Current
ID
5
10
25
mA
Input Power
Pin
−
−
0
dBm
Drain to Source Voltage
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = −3 V
−
0.5
10
μA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
32
60
88
mA
VGS (off)
VDS = 2 V, ID = 100 μA
−0.2
−0.8
−1.4
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
45
70
−
mS
Noise Figure
NF
VDS = 2 V, ID = 10 mA, f = 12 GHz
−
0.3
0.5
dB
Associated Gain
Ga
11
12.5
−
dB
−
+14
−
dBm
Gate to Source Cutoff Voltage
Gain 1 dB Compression
Output Power
2
PO (1 dB)
VDS = 3 V, ID = 25 mA set (Non-RF),
f = 12 GHz
Data Sheet PG10708EJ01V0DS
NE3515S02
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
100
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
Drain Current ID (mA)
200
150
100
50
100
150
200
60
–0.2 V
40
–0.4 V
0
250
–0.8 V
1
0
2
3
4
Ambient Temperature TA (˚C)
Drain to Source Voltage VDS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
2.0
25
1.6
20
1.4
1.2
15
Ga
1.0
0.8
10
0.6
0.4
5
NF
VDS = 2 V
90
Drain Current ID (mA)
1.8
5
100
VDS = 2 V
ID = 10 mA
Associated Gain Ga (dB)
80
70
60
50
40
30
20
0.2
10
2
4
6
8
10
12
14
16
0
–1.0
0
18
–0.8
–0.6
–0.4
–0.2
0
Frequency f (GHz)
Gate to Source Voltage VGS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.6
16
1.6
16
14
f = 12 GHz
1.4 VDS = 3 V
14
f = 12 GHz
1.4 VDS = 2 V
1.2
12
Ga
1.0
10
0.8
8
0.6
6
NFmin
0.4
4
0.2
2
0.0
0
5
10
15
20
0
25
1.2
12
Ga
1.0
10
0.8
8
0.6
6
NFmin
0.4
4
0.2
Associated Gain Ga (dB)
0.0
Minimum Noise Figure NFmin (dB)
Minimum Noise Figure NFmin (dB)
VGS = 0 V
–0.6 V
0
0
Minimum Noise Figure NFmin (dB)
80
20
50
Associated Gain Ga (dB)
Total Power Dissipation Ptot (mW)
250
2
0.0
0
Drain Current ID (mA)
5
10
15
20
25
0
30
Drain Current ID (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10708EJ01V0DS
3
NE3515S02
0
ID = 10 mA
VDS = 2 V
MAG, MSG
–5
20
–10
|S12e|2
15
–15
|S21e|2
–20
10
–25
5
0
–30
0
5
10
15
20
25
–35
30
25
0
ID = 25 mA
VDS = 3 V
MAG, MSG
–15
–20
10
–25
5
–30
0
0
5
10
15
20
Frequency f (GHz)
OUTPUT POWER, LINEAR GAIN, DRAIN CURRENT
GATE CURRENT vs. INPUT POWER
100
f = 12 GHz, VDS = 3 V
ID = 25 mA set (Non-RF)
PO (1 dB) optimized
90
Output Power Pout (dBm)
Linear Gain GL (dB)
16
80
GL
14
70
12
60
10
50
Pout
8
40
6
30
ID
4
20
2
0
–15
10
IG
–10
–5
0
Input Power Pin (1 tone) (dBm)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PG10708EJ01V0DS
5
10
0
Drain Current ID (mA)
Gate Current IG (mA)
18
–10
|S12e|2
15 |S21e|2
Frequency f (GHz)
20
–5
20
25
–35
30
Reverse Transmission Gain |S12e|2 (dB)
25
Forward Transmission Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
|S21e|2, MAG, MSG, |S12e|2 vs.
FREQUENCY
Reverse Transmission Gain |S12e|2 (dB)
Forward Transmission Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
|S21e|2, MAG, MSG, |S12e|2 vs.
FREQUENCY
NE3515S02
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
Data Sheet PG10708EJ01V0DS
5
NE3515S02
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
2.80
2.60
2.06
0.64
13.0
0.54
0.74
2.06
1.7 mm/R.P.
2.6
Reference Plane
(Calibration Plane)
1.7
1.7
φ 0.3 TH
L2–uX Ver. 1
6.0
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
6
Data Sheet PG10708EJ01V0DS
Reference Plane
(Calibration Plane)
NE3515S02
PACKAGE DIMENSIONS
S02 (UNIT: mm)
(Top View)
(Bottom View)
3.2±0.2
0.65 TYP.
2.2±0.2
1
2.2±0.2
0.5 TYP.
2.6±0.1
1
G
2
4
4
2
3
3
(Side View)
2.2±0.2
0.15±0.05
1.5 MAX.
1.7
3.2±0.2
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Source
Gate
Data Sheet PG10708EJ01V0DS
7
NE3515S02
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Caution Do not use different soldering methods together (except for partial heating).
8
Data Sheet PG10708EJ01V0DS
IR260
HS350
NE3515S02
• The information in this document is current as of February, 2008. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
Data Sheet PG10708EJ01V0DS
9
NE3515S02
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
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